• 제목/요약/키워드: Flexible electronics

검색결과 956건 처리시간 0.027초

Direct Transfer Printing of Nanomaterials for Future Flexible Electronics

  • 이태윤
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.3.1-3.1
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    • 2011
  • Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

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Facile Fabrication of Flexible In-Plane Graphene Micro-Supercapacitor via Flash Reduction

  • Kang, Seok Hun;Kim, In Gyoo;Kim, Bit-Na;Sul, Ji Hwan;Kim, Young Sun;You, In-Kyu
    • ETRI Journal
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    • 제40권2호
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    • pp.275-282
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    • 2018
  • Flash reduction of graphene oxide is an efficient method for producing high quality reduced graphene oxide under room temperature ambient conditions without the use of hazardous reducing agents (such as hydrazine and hydrogen iodide). The entire process is fast, low-cost, and suitable for large-scale fabrication, which makes it an attractive process for industrial manufacturing. Herein, we present a simple fabrication method for a flexible in-plane graphene micro-supercapacitor using flash light irradiation. All carbon-based, monolithic supercapacitors with in-plane geometry can be fabricated with simple flash irradiation, which occurs in only a few milliseconds. The thinness of the fabricated device makes it highly flexible and thus useful for a variety of applications, including portable and wearable electronics. The rapid flash reduction process creates a porous graphene structure with high surface area and good electrical conductivity, which ultimately results in high specific capacitance ($36.90mF\;cm^{-2}$) and good cyclic stability up to 8,000 cycles.

Bendable 임베디드 전자모듈의 손상 메커니즘 (Failure Mechanism of Bendable Embedded Electronic Module Under Various Environment Conditions)

  • 조윤성;김아영;홍원식
    • Journal of Welding and Joining
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    • 제31권5호
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    • pp.59-63
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    • 2013
  • A bendable electronic module has been developed for a mobile application by using a low-cost roll-to-roll manufacturing process. In flexible embedded electronic module, a thin silicon chip was embedded in a polymer-based encapsulating adhesive between flexible copper clad polyimide layers. To confirm reliability and durability of prototype bendable module, the following tests were conducted: Moisture sensitivity level, thermal shock test, high temperature & high humidity storage test, and pressure cooker tester. Those experiments to induce failure of the module due to temperature variations and moisture are the experiment to verify the reliability. Failure criterion was 20% increase in bump resistance from the initial value. The mechanism of the increase of the bump resistance was analyzed by using non-destructive X-ray analysis and scanning acoustic microscopy. During the pressure cooker test (PCT), delamination occurred at the various interfaces of the bendable embedded modules. To investigate the failure mechanism, moisture diffusion analysis was conducted to the pressure cooker's test. The hygroscopic characteristics of the encapsulating polymeric materials were experimentally determined. Analysis results have shown moisture saturation process of flexible module under high temperature/high humidity and high atmosphere conditions. Based on these results, stress factor and failure mechanism/mode of bendable embedded electronic module were obtained.

수소 첨가에 의한 비정질 ITO 박막의 기계적 특성 연구 (Effect of Hydrogen on Mechanical S tability of Amorphous In-Sn-O thin films for flexible electronics)

  • 김서한;송풍근
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.56-56
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    • 2018
  • Transparent conductive oxides (TCOs) have attracted attention due to their high electrical conductivity and optical transparency in the visible region. Consequently, TCOs have been widely used as electrode materials in various electronic devices such as flat panel displays and solar cells. Previous studies on TCOs focused on their electrical and optical performances; there have been numerous attempts to improve these properties, such as chemical doping and crystallinity enhancement. Recently, due to rapidly increasing demand for flexible electronics, the academic interest in the mechanical stability of materials has come to the fore as a major issue. In particular, long-term stability under bending is a crucial requirement for flexible electrodes; however, research on this feature is still in the nascent stage. Hydrogen-incorporated amorphous In-Sn-O (a-ITO) thin films were fabricated by introducing hydrogen gas during deposition. The hydrogen concentration in the film was determined by secondary ion mass spectrometry and was found to vary from $4.7{\times}10^{20}$ to $8.1{\times}10^{20}cm^{-3}$ with increasing $H_2$ flow rate. The mechanical stability of the a-ITO thin films dramatically improved because of hydrogen incorporation, without any observable degradation in their electrical or optical properties. With increasing hydrogen concentration, the compressive residual stress gradually decreased and the subgap absorption at around 3.1 eV was suppressed. Considering that the residual stress and subgap absorption mainly originated from defects, hydrogen may be a promising candidate for defect passivation in flexible electronics.

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A 2' QCIF Flexible OTFT driven AM-OLED Display

  • Suh, Kyung-Soo;You, In-Kyu;Kang, Seung-Youl;Ahn, Seong-Deok;Oh, Ji-Young;Kim, Gi-Hyun;Baek, Kyu-Ha;Kim, Chul-Am;Hwang, Chi-Sun;KoPark, Sang-Hee;Yang, Yong-Suk;Chung, Sung-Mook;Lee, Jeong-Ik;Do, Lee-Mi;Chu, Hye-Yong;Kang, Kwang-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.181-185
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    • 2006
  • The flexible 2-inch AMOLED with $176{\times}144$ pixels has been demonstrated using top emission OLED driven by organic thin film transistors (OTFTs). For the development of AMOLED display on plastic substrate, we have developed several integration and unit process technologies. Through the optimization of the process based on plastic substrate, OTFT backplane with 2 transistors and 1 capacitor in a pixel has been fabricated and integrated with top emission OLED. The active addressing by OTFT driving circuit has been achieved and green light with 15 $cd/m^2$ at 15V has been observed.

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Flexible and Transparent Reduced Graphene Oxide Nanocomposite Field-Effect Transistor for Temperature Sensing

  • Tran, QuangTrung;Ramasundaram, Subramanian;Hong, Seok Won;Lee, Nae-Eung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.387.1-387.1
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    • 2014
  • A new class of temperature-sensing materials is demonstrated along with their integration into transparent and flexible field-effect transistor (FET) temperature sensors with high thermal responsivity, stability, and reproducibility. The novelty of this particular type of temperature sensor is the incorporation of an R-GO/P(VDF-TrFE) nanocomposite channel as a sensing layer that is highly responsive to temperature, and is optically transparent and mechanically flexible. Furthermore, the nanocomposite sensing layer is easily coated onto flexible substrates for the fabrication of transparent and flexible FETs using a simple spin-coating method. The transparent and flexible nanocomposite FETs are capable of detecting an extremely small temperature change as small as $0.1^{\circ}C$ and are highly responsive to human body temperature. Temperature responsivity and optical transmittance of transparent nanocomposite FETs were adjustable and tuneable by changing the thickness and R-GO concentration of the nanocomposite.

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Fabrication of Core-Shell Structure of Ni/Au Layer on PMMA Micro-Ball for Flexible Electronics

  • Hong, Sung-Jei;Jeong, Gyu-Wan;Han, Jeong-In
    • Current Photovoltaic Research
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    • 제4권4호
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    • pp.140-144
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    • 2016
  • In this paper, core-shell structure of nickel/gold (Ni/Au) conductive layer on poly-methyl-methacrylate (PMMA) micro-ball was fabricated and its conduction property was investigated. Firstly, PMMA micro-ball was synthesized by using dispersion polymerization method. Size of the ball was $2.8{\mu}m$ within ${\pm}7%$ deviation, and appropriate elastic deformation of the PMMA micro-ball ranging from 31 to 39% was achieved under 3 kg pressure. Also, 200 nm thick Ni/Au conductive layer was fabricated on the PMMA micro-ball by uniformly depositing with electroless-plating. Adhesion of the conductive layer was optimized with help of surface pre-treatment, and the layer adhered without peeling-off despite of thermal expansion by collision with accelerated electrons. Composite paste containing core-shell structured particles well cured at low temperature of $130^{\circ}C$ while pressing the test chip onto the substrate to make electrical contact, and electrical resistance of the conductive layer showed stable behavior of about $6.0{\Omega}$. Thus, it was known that core-shell structured particle of the Ni/Au conductive layer on PMMA micro-ball was feasible to flexible electronics.

잉크젯 프린팅 기술을 이용한 플렉서블 온·습도센서 개발 (Fabrication of Flexible Temperature & Humidity Sensor Using Inkjet-printing Technology)

  • 계지원;한동철;신한재;김헌곤;이왕훈
    • 센서학회지
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    • 제24권2호
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    • pp.119-123
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    • 2015
  • This paper presents the inkjet-printed flexible temperature and humidity sensor(F-TH sensor) using PEDOT:PSS. The series, mesh and parallel type sensing element using PEDOT:PSS ink was printed on the overhead projector(OHP) film. The fabricated sensor of each structure has the temperature sensitivity of $140{\Omega}/^{\circ}C$, $29{\Omega}/^{\circ}C$ and $1.4{\Omega}/^{\circ}C$ with linearity, respectively. Also the fabricated sensor was not only possible to measure a temperature, but also to detect humidity. The humidity sensitivity of $400{\Omega}/%RH$, $3.4{\Omega}/%RH$ and $3{\Omega}/%RH$ with linearity, respectively. The fabricated F-TH sensor is expected for the various applications such as electronic devices, bio-healthcare, industrial field.

저분자 유기 광다이오드 소자의 p형 유기물 두께에 따른 전류 특성에 관한 연구 (A Study on the Thickness Dependence of p-type Organic Layer on the Current of Small Molecule-based Organic Photodiode)

  • 김영우;이동운;전용민;조의식;권상직
    • 반도체디스플레이기술학회지
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    • 제22권3호
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    • pp.101-105
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    • 2023
  • Organic photo Diodes (OPDi) give multiple advantages in the growing interest of the flexible optoelectronic devices. Organic semiconductors are freeform as they can deposit on any substrate, so it could be flexible. But the inorganic material photodiodes (PDs) are usually fabricated on silicon wafers which are solid. So, normally PDs are inflexible. By those reasons, we decided to make the vacuum deposited small molecule OPDi. We have investigated the OPDi's J-V characteristic by changing the thickness of p-type layer of OPDi. This device consists of indium-tin-oxide (ITO) / 2,3:6,7-dibenzanthracene (pentacene) / buckminsterfullerene (C60) / aluminum (Al). Its J-V characteristics were measured in the probe station(4156C) that can give dark condition while measuring. And for the luminance characteristics, the photocurrent was measured with the bright halogen lamp and a probe station.

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