• 제어로봇시스템학회논문지
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• 제20권3호
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• pp.345-355
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• 2014

Since the beginning of the 21st century, emergence of innovative technologies in robotic and telepresence surgery has revolutionized minimally access surgery and continually has advanced them till recent years. One of such surgeries is endoscopic surgery, in which endoscope and endoscopic instruments are inserted into the body through small incision or natural openings, surgical operations being carried out by a laparoscopic procedure. Due to a vast amount of developments in this technology, this review article describes only a technological state-of-the arts and trend of endoscopic robots, being further limited to the aspects of key components, their functional requirements and operational procedure in surgery. In particular, it first describes technological limitations in developments of key components and then focuses on the description of the performance required for their functions, which include position control, tracking, navigation, and manipulation of the flexible endoscope body and its end effector as well, and so on. In spite of these rapid developments in functional components, endoscopic surgical robots should be much smaller, less expensive, easier to operate, and should seamlessly integrate emerging technologies for their intelligent vision and dexterous hands not only from the points of the view of surgical, ergonomic but also from safety. We believe that in these respects a medical robotic technology related to endoscopic surgery continues to be revolutionized in the near future, sufficient enough to replace almost all kinds of current endoscopic surgery. This issue remains to be addressed elsewhere in some other review articles.

• 한국정보처리학회논문지
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• 제7권2S호
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• pp.721-732
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• 2000

Multimedia communication systems require not only high-performance computer hardwares and high-speed networks, but also a buffer management mechanism to process many data efficiently. Two buffer handling methods, Push and Pull, are commonly used. In the Push method, a server controls the flow of dat to a client, while in the Pull method, a client controls the flow of data from a server. Those buffering schemes can be applied to the data transfer between the packet receiving buffer, which receives media data from a network server, and media playout devices, which play the recived media data. However, the buffer management mechanism in client-sides mainly support either one of the Push or the Pull method. Consequently, they have some limitations to support various media playout devices. Futhermore, even though some of them support both methods, it is difficult to use since they can't provide a unified structure. To resolved these problems, in this paper, we propose an efficient and flexible Push/Pull buffer management mechanism at client-side. The proposed buffer management scheme supports both Push and Pull method to provide various media playout devices and to support buffering function to absorb network jitter. The proposed scheme can support the various media playback devices using a single buffer space which in consequence, saves memory space compared to the case that a client keeps tow types of buffers. Moreover, it facilitates the single buffer as a mechanism for the absorbing network jitter effectively and efficiently. The proposed scheme has been implemented in an existing multimedia communication system, so called ISSA (Integrated Streaming Service Architecture), and it shows a good performance result compared to the conventional buffering methods in multimedia communication environments.

• 한국표면공학회지
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• 제42권1호
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• pp.21-25
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• 2009

Using an evaporation system, $SiO_2$ was deposited as a buffer layer between a PET substrate and a ITO layer and then ITO/$SiO_2$/PET layers were annealed for 1.5 hours at the temperature of $180^{\circ}C$. Adhesion and electro-optical properties of ITO films were studied with thickness variance of a $SiO_2$ buffer layer. As a result of introduction of the $SiO_2$ buffer layer, sheet resistance and resistivity increased and a ITO film with optimum sheet resistance ($529.3{\Omega}/square$) for an upper ITO film of resistive type touch panel could be obtained when $SiO_2$ of $50{\AA}$ was deposited. And it was found that ITO films with $SiO_2$ buffer layer have higher transmittance of $88{\sim}90%$ at 550 nm wavelength than ITO films with no buffer layers and the transmittance was enhanced as $SiO_2$ thickness increased from $50{\AA}$ to $100{\AA}$. Adhesion property of ITO films with $SiO_2$ buffer layers became better than ITO films with no buffer layers and this property was independent of $SiO_2$ thickness variance ($50{\sim}100{\AA}$). By depositing a $SiO_2$ buffer layer of $50{\AA}$ on the PET substrate and sputtering a ITO thin film on the layer, a ITO film with enhanced adhesion, electro-optical properties could be obtained.

• 한국소음진동공학회논문집
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• 제19권12호
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• pp.1322-1328
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• 2009

This paper presents vibration analysis of maskless exposure module in printed circuit board(PCB) manufacturing system. In order to complete exposure process in PCB, masking type module has been widely used in electronics industries. However, masking process confronts some limitations of application due to higher production cost for masking as well as lower printing resolution. Therefore, maskless exposure module is started to be in the spotlight for flexible production system to meet the needs of fabrication in variable patterns at low cost. Since maskless exposure process adopts direct patterning to PCB, vibration problems become more critical compared to conventional masking type process. Moreover, movements of exposure engine as well as stage generate vibration sources in the system. Thus, it is imperative to analyze the vibration characteristics for the maskless exposure module to improve the quality and accuracy of PCB. In this study, vibration analysis using the finite element analysis is conducted to identify the critical structural parts deteriorating vibration performance. Also, Experimental investigations are conducted by single/dual encoder measurement process under the operating module speed. Measurement points of vibration are selected by three places, which are base of stage, exposure engine and top of stage, to check the effect of vibration from the exposure engine. Comparisons between analysis results and experimental measurement are conducted to confirm the accuracy of analysis results including the developed FE model. Finally, this studies show feasibility of optimal design using the developed FE analysis model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.470-470
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• 2012

Organic thin film transistors (OTFTs) backplane constitute the active elements in new generations of plastic electronic devices for flexible display. The overall OTFTs performance is largely depended on the properties and quality of each layers of device material. In solution based process of organic semiconductors (OSCs), the interface state is most impediments to preferable performance. Generally, a threshold voltage (Vth) shift is usually exhibited when organic gate insulators (OGIs) are exposed in an ambient air condition. This phenomenon was caused by the absorbed polar components (i.e. oxygen and moisture) on the interface between OGIs and Soluble OSCs during the jetting process. For eliminating the polar component at the interface of OGI, the role of high vacuum seasoning on an OGI for all solution processable OTFTs were studied. Poly 4-vinly phenols (PVPs) were the material chosen as the organic gate dielectric, with a weakness in ambient air. The high vacuum seasoning of PVP's surface showed improved performance from non-seasoning TFT; a $V_{th}$, a ${\mu}_{fe}$ and a interface charge trap density from -8V, $0.018cm^2V^{-1}s^{-1}$, $1.12{\times}10^{-12}(cm^2eV)^{-1}$ to -4.02 V, $0.021cm^2V^{-1}s^{-1}$, $6.62{\times}10^{-11}(cm^2eV)^{-1}$. These results of OTFT device show that polar components were well eliminated by the high vacuum seasoning processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.

• 한국레이저가공학회지
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• 제11권4호
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• pp.29-34
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• 2008

Ultraviolet laser micromachining has increasingly been applied to the electronics industry where precision machining of high-density, multi-layer, and multi material components is in a strong demand. Due to the ever-decreasing size of electronic products such as cellular phones, MP3 players, digital cameras, etc., flexible printed circuit board (FPCB), multi-layered with polymers and metals, tends to be thicker. In present, multi-layered FPCBs are being mechanically cut with a punching die. The mechanical cutting of FPCBs causes such defects as burr on layer edges, cracks in terminals, delamination and chipping of layers. In this study, the laser cutting mechanism of FPCB was examined to solve problems related to surface debris and short-circuiting that can be caused by the photo-thermal effect. The laser cutting of PI and FCCL, which are base materials of FPCB, was carried out using a pico-second laser(355nm, 532nm) and nano-second UV laser with adjusting variables such as the average/peak power, scanning speed, cycles, gas and materials. Points which special attention should be paid are that a fast scanning speed, low repetition rate and high peak power are required for precision machining.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.186-186
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• 2012

최근 Flexible organic electronics 분야에 대한 관심과 더불어 소자의 산소 및 수분의 침투를 방지하기 위한 투습방지막 연구가 활발히 진행되고 있다. 이에 본 연구에서는 Closed Drift Linear Source(CDLPS) 플라즈마 공정을 이용하여 저온 고속의 $SiO_xC_yH_z$ barrier flims 형성 연구를 진행하였다. HMDSO(hexamethyldisiloxane), TMS(trimethylsilane)와 산소를 기반으로 HMDSO/HMDSO+산소의 비율에 따라 $Si(-O_x)$ 변화에 따른 특성 평가를 진행하였다. X-ray photoelectrom spectroscopy(XPS) 및 Ft-IR spectrometer 측정 시 3.7% 비율에서 실리콘 원소가 산소 라디칼과 효율적인 반응을 함으로써 단일한 $SiO_2$ 박막이 형성됨을 확인 하였다. 그와 반면에 비율의 증가로 인해 다량의 HMDSO 물질이 주입 되었을 시 산소 라디칼과 충분히 반응 되지 못하여 $SiO_2$에 비해 $Si(CH)_x$ 가 많이 함량 된 Polymer like한 $SiO_x$가 많이 형성되었다. 박막의 증착율의 경우에는 3.7%에서 18%로 증가함에 따라 35 nm/min에서 180 nm/min의 증착율을 가지는 것을 확인 하였다. 3.7% 비율의 단일 $SiO_2$ 공정 조건으로 유기태양전지에 형성 하였을 시 소자의 에너지 변환 효율(PCE)이 변화 없는 것을 확인하였다. 이는 기존 공정에 비해 CDLPS 플라즈마 공정의 경우 유기소자에 플라즈마로 인한 열에너지나 이온 충격 에너지로 인한 영향 없는 것을 확인 할 수 있다. 이런 장점을 통해 CDSPS를 이용한 공정 기술은 다양한 유기 소자의 barrier 형성 연구에 큰 도움이 될 것이다.

• 전기전자학회논문지
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• 제21권4호
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• pp.404-407
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• 2017

에어로졸 증착 공정을 이용하여 ZnO, AZO 및 ITO 막을 증착하고 코팅막의 미세구조, 광학적 및 전기적 특성을 연구하였다. 상온에서 PET 기판 위에 약 400 nm의 두께를 가지는 ZnO, AZO 및 ITO 막을 성공적으로 제조할 수 있었으며 캐리어 가스 유량이 증가하면서 ZnO, AZO 및 ITO 막의 광학적 특성 및 전기적 특성이 향상되었다. 기계적인 유연 내구성 시험에 있어 ZnO 막은 5,000회의 굽힘에도 파괴가 발생하지 않은 반면 AZO 및 ITO 막은 5000회 굽힘 시험 후 막의 파괴가 발생하고 투과도 및 저항의 성능이 저하되었다. 결론적으로 AZO 및 ITO 막의 성능은 ZnO 막에 비하여 약간 열세이나, 입자크기 제어 및 공정 최적화를 통해 성능을 향상시킬 수 있을 것으로 판단된다.

• 한국재료학회지
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• 제25권1호
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• pp.43-47
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• 2015

$Zn(BH_4)_2$ was prepared by milling $ZnCl_2$ and $NaBH_4$ in a planetary ball mill in an Ar atmosphere, and XRD analysis, SEM observation, FT-IR analysis, DTA, and TGA were performed for synthesized $Zn(BH_4)_2$ samples. 90 wt% $MgH_2$+1.67 wt% $Zn(BH_4)_2(+NaCl)$+5 wt% Ni+1.67 wt% Ti+1.67 wt% Fe (named $90MgH_2+1.67Zn(BH_4)_2(+NaCl)$+5Ni+1.67Ti+1.67Fe) samples were also prepared by milling in a planetary ball mill in an $H_2$ atmosphere. The gas absorption and release properties of the $Zn(BH_4)_2(+NaCl)$ and $90MgH_2+1.67Zn(BH_4)_2(+NaCl)_2(+NaCl)$+5Ni+1.67Ti+1.67Fe samples were investigated. An FT-IR analysis showed that $Zn(BH_4)_2$ formed in the $Zn(BH_4)_2(+NaCl)$ samples prepared by milling $ZnCl_2$ and $NaBH_4$. At the first cycle at $320^{\circ}C$, $90MgH_2+1.67Zn(BH_4)_2(+NaCl)$+5Ni+1.67Ti+1.67Fe absorbed 2.95 wt% H for 2.5 min and 4.93 wt% H for 60 min under 12 bar $H_2$, and released 1.46 wt% H for 10 min and 4.57 wt% H for 60 min under 1.0 bar $H_2$.