• Title/Summary/Keyword: Flexible Electronic Device

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Fabrication of Flexible Thin Film Diode Devices for Plastics film LCO (플라스틱 필름 LCD용 연성 박막 다이오드 소자 제작)

  • 이찬재;홍성제;한정인;김원근
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07a
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    • pp.218-221
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    • 2002
  • We have successfully developed the high performance flexible thin film diode device for flexible plastic film LCD. For flexible LCD, TFD device must be normally operated under any deformation state. Two type devices, Ti/Ta$_2$O$\sub$5//Ta and Al/Ta$_2$O$\sub$5//Al were fabricated and the symmetry and reliability of those were estimated under various measurement conditions including severely bending states.

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Flexible Information Display using Powder Electroluminescent Device (후막 전계 발광 소자를 이용한 정보 표시형 Flexible Display)

  • Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 2000.11c
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    • pp.428-430
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    • 2000
  • In this paper, the Flexible information display was implemented using AC powder electroluminescent device. ZnS:Cu and $BaTiO_3$ was used as a phosphor and dielectric respectively. The preparation of phosphor and dielectric layer was performed with screen printing. The implemented system of the Flexible information display was divided as following; EL display, driving circuit, software for driving. The properties of fabricated devices was measured with EL spectrum and brightness.

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TFD Device with Symmetrical Structure of Flexible Electrode Subject to Flexible Substrate

  • Lee, Chan-Jae;Hong, Sung-Jei;Kim, Won-Keun;Han, Jeong-In
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.4
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    • pp.32-35
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    • 2002
  • In this work, we test electrode material of TFD (Thin Film Diode) device subject to flexible substrate. Al, that is ductile metal, was proper for flexible electrode to fabricate flexible display. The fabricated devices had symmetric electrode structure on both sides of insulation layer. The electrode was made of ductile Al so as to reduce the mismatch of properties between the electrode and substrate. The TFD device was successfully fabricated applying our own etch-free process. Electrical properties were improved by post-annealing.

Flexible Electronic Materials Industry Trend (플렉서블 전자소재 산업 동향)

  • Park, J.M.;Lee, S.Y.;Roh, T.M.;Lee, J.I.;Lee, J.H.
    • Electronics and Telecommunications Trends
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    • v.36 no.3
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    • pp.65-75
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    • 2021
  • In the era of the 4th industrial revolution, interest in flexible devices is increasing for information and communication technology electronic products. This is a hot technology field in which competition is intensifying to preoccupy the global market for flexible electronic devices because of the many advantages of ultra-lightweight, flexibility, design diversity, high applicability, and low cost. Some flexible electronic products have been commercialized in Korea, but they are still inadequate in terms of price versus performance, so technology development is required continuously. Particularly, the development of flexible electronic materials is emerging as a key factor for flexible electronic device applications. In this study, we will look into the flexible electronic material technology and industry trends following the trend of flexible technology changes in the display, secondary battery, and solar cell, which has emerged as national core industry and has secured global competitiveness. In addition, I want to introduce the Flexible Electronic Material Center, which was established to foster the flexible electronic material industry.

EMI (Electromagnetic Interference) Shielding Properties of Barium-Based Ferrite Thin Films Prepared by Spin Spray Method (스핀 스프레이 방식으로 제조된 바륨계 페라이트 박막의 EMI (Electromagnetic Interference) 차폐 특성)

  • Hye Ryeong Oh;Yeon-Ju Park;Woo-Sung Lee;Chan-Sei Yoo;Myong-Jae Yoo;Intae Seo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.195-201
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    • 2024
  • The low-temperature deposition of BaNi(2-x)CoxFe16O27 thin films with a Ba hexaferrite structure for electromagnetic shielding was studied. The BaNi(2-x)CoxFe16O27 thin films produced through the spin spray process were suitable for thin film deposition on a flexible substrate because it crystallized well at low temperature below 90℃. The change in shielding characteristics depending on the Co content of the BaNi(2-x)CoxFe16O27 thin film was investigated, and excellent shielding characteristics with S21 of -1 dB were obtained in a wide frequency range of 26~40 GHz when the Co content was 0.4 or more. The purpose of this study is to analyze changes in shielding properties caused by change in Co content in relation to phase changes in BaNi(2-x)CoxFe16O27 and obtain basic data for developing excellent flexible electromagnetic wave shielding materials.

Recent Advance of Flexible Organic Memory Device

  • Kim, Jaeyong;Hung, Tran Quang;Kim, Choongik
    • Journal of Semiconductor Engineering
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    • v.1 no.1
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    • pp.38-45
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    • 2020
  • With the recent emergence of foldable electronic devices, interest in flexible organic memory is significantly growing. There are three types of flexible organic memory that have been researched so far: floating-gate (FG) memory, ferroelectric field-effect-transistor (FeFET) memory, and resistive memory. Herein, performance parameters and operation mechanisms of each type of memory device are introduced, along with a brief summarization of recent research progress in flexible organic memory.

Durability of the Flexible Shape Memory Device (형상 기억 유연 소자의 내구성 평가에 관한 연구)

  • Yang, Hee-Kyung;Kim, Hae-Jin;Kim, Dae-Eun
    • Transactions of the Society of Information Storage Systems
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    • v.11 no.2
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    • pp.36-40
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    • 2015
  • The demand for flexible devices including solar cells, memories and batteries has increased rapidly over the past decades. In most flexible devices, polymer-based materials are used to enable the mechanical deformations such as bending or folding. Shape Memory Polymers (SMPs) is a high molecular compound polymer with flexibility and shape recovery characteristics. In this work, flexible shape memory device was fabricated by simply coating the conducting material, carbon nano-tube (CNT), on a shape memory polymer. Furthermore, durability of the device under various type of mechanical deformations was assessed. It is believed that the result of this work will aid in realization of a stretchable and wearable electronic device for practical applications.

Reliability of Metal Electrode for Flexible Electronics (유연성 소자용 금속 전극의 신뢰성 연구 동향)

  • Kim, Byoung-Joon
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.1-6
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    • 2013
  • Recently, various types of flexible devices such as flexible displays, batteries, e-skins and solar cell panels have been reported. Most of the researches focus on the development of high performance flexible device. However, to realize these flexible devices, the long-term reliability should be guaranteed during the repeated deformations of flexible devices because the direct mechanical stress would be applied on the electronic devices unlike the rigid Si-based devices. Among various materials consisting electronics devices, metal electrode is one of the weakest parts against mechanical deformation because the mechanical and electrical properties of metal films degrade gradually due to fatigue damage during repeated deformations. This article reviews the researches of fatigue behavior of thin metal film, and introduces the methods to enhance the reliability of metal electrode for flexible device.

Fabrication of 7" WVGA flexible electronic paper display by using toner particles

  • Ryu, Gi-Seong;Lee, Chang-Bin;Han, Sang-Kwuon;Chun, Seung-Hee;Song, Chung-Kun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.364-366
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    • 2009
  • We successfully fabricated flexible electronic paper display (EPD) by using toner particles on plastic (PC) substrate. It has high resolution (WVGA : 800 ${\times}$ 480) and 7 inch diagonal viewable image size. The response time was about 0.25 msec at 90 V, a contrast ratio of about 2, a driving voltage of 60 V which we successfully demonstrated to display several images at.

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Low Temperature Chemical Vapor Deposition of BNO Thin Films for Flexible Electronic Device Applications (유연성 전자소자 적용을 위한 BNO박막의 저온화학기상증착)

  • Jeon, Sang-Yong;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.42-42
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    • 2007
  • In the future, electronic components will be integrated on flexible polymer substrates and then miniaturized by thin films using suitable thin film technologies. In this article, the concept of a room temperature CVD is demonstrated using $Bi_3NbO_7$ (BNO) films with a cubic fluorite structure and their structural and electrical properties were investigated in films deposited without substrate heating. Effects of substrate temperature on electrical properties of BNO films were also studied. Films deposited without substrate heating (real temperature of $50^{\circ}C$) show partially crystallized BNO single phases with grain size of approximately 6.5 nm. Their dielectric and leakage properties are comparable to those of films deposited by pulsed laser deposition at room temperature. The concept of room temperature CVD will become a new paradigm in the deposition of dielectric thin films for flexible electron device applications.

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