• Journal of the Korean Society for Precision Engineering
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• v.19 no.1
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• pp.99-106
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• 2002

For the development of a ultra-precision CNC polishing system including on-machine measurement system, we study a corrective polishing algorithm. We calculated unit removal profiles for various flat type polishing tools and polishing tool positions. Using these results we simulate the corrective polishing process based on dwell time control. We calculate dwell time distributions and residual error of the polishing simulation method and the FFT calculation method. We test corrective polishing algorithm with an optical glass. The target removal shape is a sine wave that has amplitude 0.3 micro meters. We find this polishing process has a machining resolution of nanometer order and is effective for sub-micrometer order machining. This result will be used for the software development of the CNC polishing system.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.2
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• pp.26-32
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• 2010

This paper reports some experimental result in grinding and polishing of silicon cathodes used in semiconductor manufacturing process. Cup shape diamond core wheels were used in experiments and the radial and tangential grinding forces were measured with surface roughness. In polishing experiments, flat type and donut type wool polishing tools were tested. The experimental results indicate that the grinding forces are proportional to the material removal rates and the surface roughness are inversely proportional to the spindle speed. The surface roughness of polished Si decreases with polishing time and higher spindle speed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.561-564
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• 2003

The machining technology for the removal of micro-burr has been demanded because electrode parts of electron gun have minute holes. In this study, Magnetic Assisted Polishing(MAP) is applied to remove the micro-burr instead of the contentional polishing process such as the etching and barrel. Optimal polishing conditions are selected from many experiments using the tool of the flat end slit type. On the basis of experimental results, the deburring machine for the Magnetic Assisted Polishing of electrode part is developed and its performance is evaluated.

• Applied Microscopy
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• v.46 no.2
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• pp.110-115
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• 2016

Transmission electron microscopy (TEM) is a powerful tool for analyzing a broad range of materials and provides localized information about the microstructure. However, the analysis results are strongly influenced by the quality of the thin foil specimen. Sample preparation for TEM analysis requires considerable skill, especially when the area of interest is small or the material of interest is difficult to thin because of its high hardness and its mechanical instability when thinned. This article selectively reviews recent advances in TEM sample preparation techniques using a tripod polisher. In particular, it introduces two typical types (fl at type and wedge type) of TEM sample preparation and the benefits and drawbacks of each method; finally, a method of making better samples for TEM analysis is suggested.

• International Journal of Highway Engineering
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• v.9 no.4
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• pp.117-127
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• 2007

The exposed aggregate PCC(EAP) pavements have been successfully used in Europe and Japan as low-noise pavements. Coarse aggregate are exposed on the pavement surface texture of EAP by removing mortar of surface. The pavement surface texture should maintain not only low-noise characteristic but also adequate skid resistance level during the performance period. Skid resistance decreased with wearing and polishing of tire and pavement surface due to the repetition of tire-pavement contact. Since the tires mainly contact the exposed coarse aggregate, the shape and rock type of coarse aggregate significantly influence wearing and polishing of EAP pavements. The test for resistance to abrasion coarse aggregate by use of the Los Angeles machine(KS F 2508) and the method of test for resistance to abrasion coarse aggregate by use of the Accelerated Polishing Machine(ASTM D 3319-90) are generally used to evaluate polishing characteristics of aggregate. In this study, polishing of coarse aggregate of different five rock types were evaluated by KS F 2508(LA abrasion test) and ASTM D 3319-90(PSV method). The results of LA abrasion test and PSV method were contrary to each other. Since LA abrasion test is estimated the quantity of abrasion by the impact of aggregate, it may not be adequate to evaluate the polishing of aggregate by the repetition of tire. In the case of PSV method, the resistance of polishing is estimated the skid resistance variation of polished aggregate after repetition of tire. The PSV method is adequate for the evaluation on polishing of coarse aggregate. From the test results of PSV method, it was founded that rock type, specific gravity, coarse aggregate angularity, flat or elongated particles in coarse aggregate are significant to the resistance characteristic of coarse aggregate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion- usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder type conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usually scraped. Figure 1 shows the typical shape of scratch damaged from diamond. e suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning. so new designed Flat stripper was introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.171-175
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• 2001

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectrics and metal, which can apply to employed in integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of free-defects in inter level dielectrics and metal. Especially, defects like (micro-scratch) lead to severe circuit failure, and affects yield. Current conditioning method - bladder type, orbital pad motion - usually provides unsuitable pad profile during ex-situ conditioning near the end of pad life. Since much of the pad wear occurs by the mechanism of bladder tripe conditioning and its orbital motion without rotation, we need to implement new ex-situ conditioner which can prevent abnormal regional force on pad caused by bladder-type and also need to rotate the pad during conditioning. Another important study of ADPC is related to the orbital scratch of which source is assumed as diamond grit dropped from the strip during ex-situ conditioning. Scratch from diamond grit damaged wafer severely so usual1y scraped. Figure 1 shows the typical shape of scratch damaged from diamond. We suspected that intensive forces to the edge area of bladder type stripper accelerated the drop of Diamond grit during conditioning, so new designed Flat stripper was introduced.