• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.250-250
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• 2012

Organic light-emitting diodes (OLED) and polymer light emitting diodes (PLED) have been regarded as the candidate for the next generation light source and flat panel display. Currently, the most common OLED industrial fabrication technology used in producing real products utilizes a fine shadow mask during the thermal evaporation of small molecule materials. However, due to high potential including low cost, easy process and scalability, various researches about solution process are progressed. Since polymer has some disadvantages such as short lifetime and difficulty of purifying, small molecule OLED (SMOLED) can be a good alternative. In this work, we have demonstrated high efficient solution-processed OLED with small molecule. We use CBP (4,4'-N,N'-dicarbazolebiphenyl) as a host doped with green dye (Ir(ppy)3 (fac-tris(2-phenyl pyridine) iridium)). PBD (2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) and TPD (N,N'diphenyl-N,N'-Bis (3-methylphenyl)-[1,1-biphenyl]-4,4'-diamine) are employed as an electron transport material and a hole transport material. And TPBi (2,2',2''-(1,3,5-phenylene) tris (1-phenyl-1H-benzimidazole)) is used as an hole blocking layer for proper hole and electron balance. With adding evaporated TPBi layer, the current efficiency was very improved. Among various parameters, we observed the property of OLED device by changing the thickness of hole transporting layer and solvent which can dissolve organic material. We could make small molecule OLED device with finding proper conditions.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.23 no.3
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• pp.299-306
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• 2013

Objectives: The purpose of this study is to provide current the recent information on indium-related adverse health effects and the Korean indium-related industries. Methods: Peer review papers were searched in environmental, occupational and medical journals with the keyword of 'Indium' and 'ITO' and reviewed. To determine the indium related industries and indium consumption amounts, references and database were investigated and analyzed. In addition, field walk-through surveys and interviews were conducted in order to collect field data and to ascertain the field situation for the processes and industries. Results: A total of 10 cases of indium lung diseases have been reported in series since the first case reported in 2001. Seven cases were found in Japan, two cases in the United States, and one in China. No indium lung case has been reported yet in Korea, but it is believed that there are high potential risks among workers in indium-related industries. There are four categories in indiumrelated- industry; indium production and smelting, manufacturing of indium products such as ITO target, the production of thin films of flat panel display, and indium recovery industry. We found that all these types of industries are operating in Korea. Therefore, it is necessary for industrial hygienists to understand the processes and industries related to indium as well as the adverse health effects of indium. Conclusions: It was found that all four categories of indium-related industry from the indium production to recovery industry are active in Korea. However, the adverse health effects of indium are not well recognized. Therefore, it is believed that there is a high risks in indium-related industry, and it is necessary to make emergency interventions.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.159-159
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• 2016

Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.180-180
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• 2015

Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.485-485
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• 2009

Double side polishing process has been used for various industrial applications, such as polishing of semiconductor substrates and flat panel display glasses. In wafer manufacturing, double side polishing process is applied to improve wafer flatness and to minimize particle generation from wafers in device manufacturing processes, which is recognized as one of the most important processes. Whereas the kinematical modeling and analysis results of single side polishing, extensively used for chemical-mechanical polishing (CMP) in device manufacturing, are well investigated, the studies in conjunction with double side polishing are barely carried out, due to the complication of polishing system and the uncertainty of wafer motion in the carrier. This paper suggests the derivation of kinematical model with consideration of carrier and wafer motion in double side polishing, and then presents the effect of kinematical parameters on material removal amount and its non-uniformity. The kinematical analysis results help to understand the double side polishing process and to control the polishing results.

• Journal of Korea Multimedia Society
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• v.8 no.10
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• pp.1360-1368
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• 2005

PDP is the flat panel display, suitable for high definition television because of large-sire and high-brightness. It has many advantages such as fast response, wide viewing angle, low weight, and simple manufacturing process for fabrication. However, there are some disadvantages and one of them is the image quality degradation, which is dependent on the digital signal processing. Although image quality of PDP is improving by many researches and experimentations, it still isn't as good as that of CRT because of various factors. One of them is worm-like pattern generated by an error diffusion process. And the worm-like pattern is severely increased after an APL process. An increased worm-like pattern occur a drop of resolution in image and a change of CCT according to each grayscale. In this paper, a method for improvement of image quality using the error diffusion which considers the APL process is proposed. In the proposed method, the APL process is performed before the error diffusion process. Simulation results showed that the proposed method has better performances for resolution in images and CCT uniformity according to each grayscale than the conventional method.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.21 no.1
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• pp.148-156
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• 2007

This paper explains stocker system that is operated in the long distance and linear area. The power system of stocker system uses Contactless Power Supply(CPS) to reduce problems of particle generation. The circuit configuration of CPS is simplified than the conventional ones, and the prototype is designed for commercial product. To transfer output data(information) from crane(secondary vehicle system) of the CPS to Primary system optical modem and TMS320F243(DSP, TI) are used between primary and secondary. power system are used, and the output voltage is controlled by operating frequency modulation. This paper is applied to stocker system controlled as one to one communication between the moving part(secondary system) and fixed part(primary system) of crane using optical modem. The study makes one to multi communication between fixed part and moving part for the purpose of multi crane operation of stocker system and must be done in the future.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.198-198
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• 2006

Tin doped $In_2O_3$ sputtering target is widely used to produce a various kinds of flat panel display because of high transmittance in visible region and high electrical conductivity. In2O3 and SnO2 powders were prepared by a homogeneous precipitation method using metal source, respectively, the calcining and sintering behavior of the indium-tin oxide(In2O3-SnO2) composite powders were studied. The tin oxide(SnO2) dispersion condition in ITO sputtering target was improved by increasing calcining temperature. And the tin oxide dispersion was also improved by reducing the tin oxide contents in the ITO target from 30 to 5wt%. SnO2 dispersion and densification of ITO target is very difficult to control due to sublimation of SnO2 at over 1150C.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.13-19
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• 2004

We have been studied on the high concentration ozonized water production technology which substitute for the SPM wet cleaning solution process as the PR strip process after the photolithography process in the semiconductor and flat panel display manufacturing. In this work, we have developed the surface discharge type ozone generator which has the characteristics of the 12 ［wt%］ ozone concentration at the oxygen gas flow of 0.5［ℓ/min］ oxygen per cell and also developed the high efficiency ozone contactor for the mixing ozone gas with deionized water. As the production test results of the ozonized water, we obtained the ozonized water concentration above 80［ppm］ at the 10［wt%］ ozone gas concentration, and also had a good result of the PR strip rate of 147［nm/min］. at the 70［ppm］ ozonized water.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.17-23
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• 2000

In this study, we prepared red organic light-emitting-diode(OLED) with a fluorescent dye(Sq)-doped and inserted between emission and cathode layer 1,3-bis(5-p-t-butylphenyl)-1,3,4-oxadiazol-2-yl)benzene (OXD7) or/and tris(8-hydroxyquinoline) aluminum ($Alq_3$) layers for increasing electroluminescent(EL) efficiency. This inserting effect has been observed and EL mechanism characteristics have been examined. The hole transfer layer is a N,N'-diphenyl-N,N'-bis-(3-methyl phenyl)-1,1'-diphenyl-4,4'-diamine (TPD), and the host and guest materials of emission layer is $Alq_3$ and bis[1-methyl-3,3'-dimethyl-2-indorindiylmethyl] squaraine (Sq), respectively. For the inserting of $Alq_3$, emission efficiency increased. But we can not obtained highly pure red emission owing to the emission of inserting $Alq_3$ layer. The inserting of OXD7 makes hole block and accumulate. Because of increasing recombination probability of electron and hole, highly pure red color can be held. Simultaneously brightness characteristics and emission efficiency could improve.