• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.5
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• pp.70-78
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• 2001

We have developed a novel driving system of 5' true color FED using voltage controlled PWM method which has current control effect. The proposed method has the advantage of voltage controlled pulse width modulation method and current control method. Also, we propose a new circuit model of FED subpixel for circuit simulation of FED driving circuits, considering some parasitic effects, i.e., cross talk, line coupling effect and leakage current to the adjacent cathode lines. Output stage of the data driving circuit is optimized using the proposed circuit model. In video data processing, FED controller uses the parallel processing of R.G.B input data, so duty ratio is maximized and brightness of FED increases. With this results, no noise and high quality performance is achieved in display of 5' true color FED.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.10
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• pp.70-78
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• 2009

This paper addresses the analysis and the design optimization of differential interconnects for high-speed Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and trace space in differential printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, and time-domain transient simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects. We believe that the proposed approach is very helpful to optimize high-speed differential FPCB interconnects for LVDS applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.761-764
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• 2007

This paper addresses the analysis and the design optimization of differential interconnects for Low-Voltage Differential Signaling (LVDS) applications. Thanks to the differential transmission and the low voltage swing, LVDS offers high data rates and improved noise immunity with significantly reduced power consumption in data communications, high-resolution display, and flat panel display. We present an improved model and new equations to reduce impedance mismatch and signal degradation in cascaded interconnects using optimization of interconnect design parameters such as trace width, trace height and πace space in differential flexible printed circuit board (FPCB) transmission lines. We have carried out frequency-domain full-wave electromagnetic simulations, time-domain transient simulations, and S-parameter simulations to evaluate the high-frequency characteristics of the differential FPCB interconnects.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.525-532
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• 2017

The development of an inkjet-based manufacturing machine for the production of next-generation displays using organic and quantum-dot light emitting diodes at a low cost has been conducted. To employ inkjet printing in production lines of displays, the development of a high-speed inkjet-monitoring device to verify the reliable droplet jetting status from multiple nozzles is required. In this study, an inkjet monitoring device using a rotatable mirror with rotary and linear ultrasonic motors is developed in place of a conventional, linear reciprocating, motion-based inkjet monitoring device. Its performance is also demonstrated. The measurements of circular patterns with diameters of $10{\mu}m$, $30{\mu}m$, and $50{\mu}m$ are performed with the accuracies of $0.5{\pm}1.0{\mu}m$, $-1.2{\pm}0.3{\mu}m$, and $0.2{\pm}0.5{\mu}m$, respectively, within 17 sec. By optimizing the control program, the takt time can be reduced to as short as 8.6 sec.

• Journal of Broadcast Engineering
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• v.15 no.2
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• pp.290-303
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• 2010

Recently, researches to improve a quality and a color of a display are being actively studied because of the prosperous growth of the flat panel displays such as LCD, PDP and OLED. Automatically adjusting color temperatures based on user preferences is the one of the researches to provide the optimum display color. In this paper, along with defining the problems of prior methods, the user preferences against the priori defined ranges proposed by the MPEG-7 color temperature descriptor are inspected. Based on the analysis of user preferences, an optimal color temperature conversion curve is proposed. As a result of an analysis by ANOVA, tendencies of the user preferences against each range are proven to be similar to the prior research results. The repetition of the color temperature conversion against an image is not statistically significant.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.94-97
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• 2017

Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.45 no.1
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• pp.29-37
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• 2008

With the rapid development of display technology as well as the diversity of display, image quality assessment plays an important role in display color reproduction. The image quality has described by objective evaluation based on the physical measured data, such as contrast ratio, color reproduction range, color temperature, and gamma characteristics, etc., however, the final judgement is achieved by perceptual quality assessment of observers. Therefore, it is necessary to investigate the relationship between physical performance of display and perceptual image quality. Thus, in order to evaluate objectively the color reproduction characteristics of two mobile displays, TFT-LCD and AMOLED, we measured the darkroom contrast ratio of full screen, luminance and color temperature of full-screen white, full-screen gray and color linearity, tone reproduction of color scales for each RGB primary, and color reproduction range. Then the pair-wise comparison is implemented for image experts and naive observers not only to judge their preference on principal evaluation attributes but also to subjectively describe perceived image quality. Through two evaluation processes, we derived the objective bases that can prove the results of subjective image quality assessment by interconnecting physical factors that have influence on observers' preference judgements. Finally, this paper provided important information for improving the image quality and increasing preference from an observer's point of view.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• Korean Chemical Engineering Research
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• v.47 no.2
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• pp.150-156
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• 2009

Plasma Display Panels(PDPs) require to have improved luminous efficiency, low manufacturing cost, and high image quality to compete with other flat display devices such as Liquid Crystal Displays(LCDs) and organic light-emitting diodes(OLEDs). In addition, the diversity of product line-up may be needed for high market share. In this paper, the optical characteristics of typical green phosphor for PDP application are reviewed and the problem-based solution will be proposed. We also shortly describe the principle of 3D-PDPs which are promising. Then, the requirement of green phosphor for 3D-PDP application is summarized and research achievement, as of now, is described. The typical problems of $Zn_2SiO_4:Mn$ phosphor, which is the most well-known, are the negatively charged surface property and the long decay time, which leads to unstable discharge in green cell and afterimage. These problems were solved by coating the phosphor surface with metallic oxide. It was found that $Al_2O_3$ would be the best material for $Zn_2SiO_4:Mn$ phosphor. It gives longevity as well as low operating voltage due to the charging effect in green cells. Also, new phosphors, $(Y,\;Gd)Al_3(BO_3)_4:Tb$ and $(Mg,\;Zn)Al_2O_4:Mn$ phosphor are proposed for increasing the luminance and reducing the decay time, which are capable to apply for 3D-PDP application.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.993-994
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• 2008

Electrochromic (EC) devices are capable of reversibly changing their optical properties upon charge injection and extraction induced by the external voltage. The characteristics of the EC device, such as low power consumption, high coloration efficiency, and memory effects under open circuit status, make them suitable for use in a variety of applications including smart windows and electronic papers. Coloration due to reduction or oxidation of redox chromophores can be used for EC devices (e-paper), but the switching time is slow (second level). Recently, with increasing demand for the low cost, lightweight flat panel display with paper-like readability (electronic paper), an EC display technology based on dye-modified $TiO_2$ nanoparticle electrode was developed. A well known organic dye molecule, viologen, was adsorbed on the surface of a mesoporous $TiO_2$ nanoparticle film to form the EC electrode. On the other hand, ZnO is a wide bandgap II-VI semiconductor which has been applied in many fields such as UV lasers, field effect transistors and transparent conductors. The bandgap of the bulk ZnO is about 3.37 eV, which is close to that of the $TiO_2$ (3.4 eV). As a traditional transparent conductor, ZnO has excellent electron transport properties, even in ZnO nanoparticle films. In the past few years, one-dimension (1D) nanostructures of ZnO have attracted extensive research interest. In particular, 1D ZnO nanowires renders much better electron transportation capability by providing a direct conduction path for electron transport and greatly reducing the number of grain boundaries. These unique advantages make ZnO nanowires a promising matrix electrode for EC dye molecule loading. ZnO nanowires grow vertically from the substrate and form a dense array (Fig. 1). The ZnO nanowires show regular hexagonal cross section and the average diameter of the ZnO nanowires is about 100 nm. The cross-section image of the ZnO nanowires array (Fig. 1) indicates that the length of the ZnO nanowires is about $6\;{\mu}m$. From one on/off cycle of the ZnO EC cell (Fig. 2). We can see that, the switching time of a ZnO nanowire electrode EC cell with an active area of $1\;{\times}\;1\;cm^2$ is 170 ms and 142 ms for coloration and bleaching, respectively. The coloration and bleaching time is faster compared to the $TiO_2$ mesoporous EC devices with both coloration and bleaching time of about 250 ms for a device with an active area of $2.5\;cm^2$. With further optimization, it is possible that the response time can reach ten(s) of millisecond, i.e. capable of displaying video. Fig. 3 shows a prototype with two different transmittance states. It can be seen that good contrast was obtained. The retention was at least a few hours for these prototypes. Being an oxide, ZnO is oxidation resistant, i.e. it is more durable for field emission cathode. ZnO nanotetropods were also applied to realize the first prototype triode field emission device, making use of scattered surface-conduction electrons for field emission (Fig. 4). The device has a high efficiency (field emitted electron to total electron ratio) of about 60%. With this high efficiency, we were able to fabricate some prototype displays (Fig. 5 showing some alphanumerical symbols). ZnO tetrapods have four legs, which guarantees that there is one leg always pointing upward, even using screen printing method to fabricate the cathode.