• Title/Summary/Keyword: Flat Panel Display

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Selection of Heater Location in Linear Source for OLED Vapor Deposition (OLED 증착을 위한 선형증발원 히터 위치선정)

  • Joo, Young-Cheol;Han, Choong-Hwan;Um, Tai-Joon;Lee, Sang-Wook;Kim, Kug-Weon;Kwon, Kye-Si
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.515-518
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    • 2008
  • Organic light emitting diode(OLED) is one of the most promising type of future flat panel display. A linear source is used to deposite organic vapor to a large size OLED substrate. An electric heater which is attached on the side of linear source heats the organic powder for the sublimation. The nozzle of heater, which is attached at the top of the linear source has an optimal temperature. An numerical analysis has been performed to find optimal heater position for the optimal nozzle temperature. A commercial CFD program, FLUENT, is used on the analysis. Two-dimensional and three-dimensional analysis have been performed. The analysis showed that the heater should be attached at the outer side of crucible wall rather than inner side of housing, which was original design. Eighteen milimeter from the top of the linear source was suggested as the optimal position of heater. Improving thermal performance of linear source not only helps the uniformity of organic vapor deposition on the substrate but also increase productibity of vapor deposition process.

Development of Elimination Method of Measurement noise to Improve accuracy for White Light Interferometry (백색광 간섭계의 정밀도 향상을 위한 노이즈 제거 방법)

  • Ko, Kuk-Won;Cho, Soo-Yong;Kim, Min-Young
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.519-522
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    • 2008
  • As industry of a semiconductor and LCD industry have been rapidly growing, precision technologies of machining such as etching and 3D measurement are required. Stylus has been important measuring method in traditional manufacturing process. However, its disadvantages are low measuring speed and damage possibility at contacting point. To overcome mentioned disadvantage, non-contacting measurement method is needed such as PMP(Phase Measuring Profilometry), WSI(white scanning interferometer) and Confocal Profilometry. Among above 3 well-known methods, WSI started to be applied to FPD(flat panel display) manufacturing process. Even though it overcomes 21t ambiguity of PMP method and can measure objects which has specular surface, the measuring speed and vibration coming from manufacturing machine are one of main issue to apply full automatic total inspection. In this study, We develop high speed WSI system and algorithm to reduce unknown noise. The developing WSI and algorithm are implemented to measure 3D surface of wafer. Experimental results revealed that the proposed system and algorithm are able to measure 3D surface profile of wafer with a good precision and high speed.

Fabrication of IGZO Transparent Conducting thin Films by The Use of Combinational Magnetron Sputtering (콤비네이숀 마그네트론 스퍼터링법에 의한 IGZO 투명전도막의 제조)

  • Jung, Jae-Hye;Lee, Se-Jong;Cho, Nam-In;Lee, Jai-Youl
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.425-425
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    • 2008
  • The transparent conducting oxides(TCOs) are widely used as electrodes for most flat panel display devices(FPDs), electrodes in solar cells and organic light emitting diodes(OLED). Among them, indium oxide materials are mostly used due to its high electrical conductivity and a high transmittance in the visible spectrum. The present study reports on a study of the electrical and optical properties of IGZO thin films prepared on glass and PET substrates by the combinational magnetron sputtering. We use the targets of IZO and Ga2O3 for the deposition process. In some case the deposition process is coupled with the End-Hall ion-beam treatment onto the substrates before the sputtering. In addition we control the deposition rate to optimize the film quality and to minimize the surface roughness. Then we investigate the effects of the Ar gas pressure and RF power during the sputtering process upon the electrical, optical and morphological properties of thin films. The properties of prepared IGZO thin films have been analyzed by using the XRD, AFM, a-step, 4-point probe, and UV spectrophotometer.

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DC-sputtering으로 증착한 IZO 박막의 열처리 온도에 따른 구조적 특성

  • Kim, Jun-Ho;Mun, Jin-Yeong;Kim, Hyeong-Hun;Lee, Ho-Seong;Han, Won-Seok;Jo, Hyeong-Gyun;Kim, Heung-Seung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.468-468
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    • 2008
  • IZO(Indium zinc oxide) 박막은 화학적으로 안정하면서, 가시광 영역 (380~780 nm)에서 80% 이상의 높은 투과도와 낮은 전기비저항, 3.5 eV 이상의 넓은 밴드갭 특성을 가진다. IZO 박막의 이러한 특성 때문에 평판표시소자 (Flat Panel Display; FPD) 및 태양전지와 같은 광전소자들의 차세대 투명전도성 산화물(Transparent Conducting Oxide; TCO) 박막 재료로 주목 받고 있다. 특히 평판표시소자(FPD)들의 고해상도, 대면적화 및 경량화로 인해 투명전극용 박막의 고품위 특성이 요구되고 있다. 현재 투명 전극으로 널리 사용되고 있는 고가의 ITO(indium tin oxide)를 대체할 다성분계 산화물 투명 전극 중에서 투광성과 전기전도도가 좋은 IZO 박막에 대한 많은 연구가 진행되고 있다. 이러한 IZO 박막의 광학적, 전기적 특성은 박막 내의 조성 차이와 미세구조에 의해 결정된다. 따라서 고품위의 IZO 박막 형성을 위해서 결정구조와 미세구조에 대한 분석이 필수적이다. 본 연구에서는 Si(100) 기판 위에 DC-sputtering으로 증착한 IZO 박막의 열처리 온도에 따른 구조적 특성을 알아보기 위해 300~$600^{\circ}C$ 공기분위기에서 1시간 동안 열처리 하였다. 표면 형상(surface morphology)은 원자현미경(AFM). 결정구조는 X-선 회절(XRD)로 분석하였고, 미세구조는 투과전자현미경(TEM)으로 관찰하였다.

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Sensor Applications of Thin-Film Transistors - Photosensor, Magnetic Sensor, Temperature Sensor and Chemical Sensor -

  • Kimura, Mutsumi;Miura, Yuta;Ogura, Takeshi;Hachida, Tomohisa;Nishizaki, Yoshitaka;Yamashita, Takehiko;Shima, Takehiro;Hashimoto, Hayami;Yamaguchi, Yohei;Hirako, Masaaki;Yamaoka, Toshifumi;Tani, Satoshi;Imuro, Yoshiki;Bundo, Kosuke;Sagawa, Yuki;Setsu, Koushi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.957-960
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    • 2009
  • Sensor applications of thin-film transistors (TFTs), such as photosensor, magnetic sensor, temperature sensor and chemical sensor, are introduced. Active-matrix circuits and amplifying circuits using poly-Si TFTs are integrated with these sensors to improve sensor performances and generate additional functions. These sensors may be promising applications after flat-panel displays (FPDs) in giant-micro electronics.

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EL Devices for LCD Backlight Based on ZnS:Cu Phosphor (혼합파우더 및 절연박막층을 이용한 PELD의 광학특성)

  • 박수길;조성렬;전세호;엄재석;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.391-394
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    • 1998
  • Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

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Electron Emission From Porous Poly-Silicon Nano-Device for Flat Panel Display (다결정 다공성 실리콘의 전계방출 특성)

  • Lee, Joo-Won;Kim, Hoon;Lee, Yun-Hi;Jang, Jin;Ju, Byeong-Kwon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.4
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    • pp.330-335
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    • 2003
  • This paper reports the optimum structure of the vacuum packaged Porous poly-silicon Nano-Structured (PNS) emitter. The PNS layer was obtained by electrochemical etching process into polycrystalline silicon layer in a process controlled to anodizing condition. Current-voltage studies were carried out to optimize process condition of electron emission properties as a function of anodizing condition and top electrode thickness. Also, we measured in advance the electron emission properties as a function of substrate temperature because the vacuum packaged process was performed under the condition of high temperature ambient (430$^{\circ}C$). Auger Electron Spectrometer (AES) studies shows that Au as a top-electrode was diffused to PNS layer during temperature experiments. Thus, we optimized the thickness of top-electrode in order to make the vacuum package PNS emitter. As a result, the vacuum Packaged PNS emitter was successfully emitted by optimizing process.

Fundamentals of Liquid Crystal and Liquid Crystal Optics (액정의 비등방 물성 및 광학 특성)

  • Yu, Chang-Jae;Lee, Sin-Doo
    • Korean Journal of Optics and Photonics
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    • v.24 no.4
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    • pp.159-167
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    • 2013
  • The liquid crystal(LC) display is the most promising technology of the flat panel displays covering all applications from small mobile to large television applications. To understand the operating principles and improve the performances of the various LC displays, one should grasp the anisotropic nature of the LC and the propagation of light in the anisotropic media. Basic formulas governing the distribution of the LC molecules, directly related to the electro-optic effects of the LC devices, are described in view of the macroscopic interaction. Based on the matrix representation, the polarization analysis for the LC devices is also presented.

A Universal Controller Design for a-Si TFT LCD of SXGA Class (SXGA급 a-Si TFT LCD 범용 컨트롤러 설계)

  • Park, Byeong-Gi;Choe, Cheol-Ho;Park, Jin-Seong;Gwon, Byeong-Heon;Choe, Myeong-Ryeol
    • The Transactions of the Korea Information Processing Society
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    • v.6 no.9
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    • pp.2548-2557
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    • 1999
  • As the size of the FPD(Flat Panel Display) becomes larger and its resolution is higher, it is required a new controller to support these specifications. In this paper, we have designed a universal controller of a-Si TFT LCD which will dominate the future market. We propose a new type of a LCD controller, which is constructed by four-line parallel-bus architecture and can enlarge low resolution images to SXGA class images by using a new interpolation algorithm. The proposed LCD controller has been simulated and synthesized by using Synopsys VHDL.

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The Characteristics of Al Thin Films on Ar Plasma Surface Treatment (Al 박막의 Ar 플라즈마 표면처리에 따른 특성)

  • Park, Sung-Hyun;Ji, Seung-Han;Jeon, Seok-Hwan;Chu, Soon-Nam;Lee, Sang-Hoon;Lee, Neung-Hun
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1333-1334
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    • 2007
  • Al thin film was the most popular electrode in semiconductor and flat panel display world, because of its electrical conductivity, selectivity and easy to apply to thin film. However, Al thin films were not good to use on the bottom electrode about the crystalline growth of inorganic compound materials such as ZnO, AlN and GaN, because of its surface roughness and melting points. In this paper, we investigated Ar plasma surface treatment of Al thin film to enhance the surface roughness and electrical conductivity using the reactive ion etching system. Several process conditions such as RF power, working pressure and process time were controlled. In results, the surface roughness showed $15.53\;{\AA}$ when RF power was 100 W, working pressure was 50 mTorr and process time was 10 min. Also, we tried to deposit ZnO thin films on the each Al thin films, the upper conditions showed the best crystalline characteristics by x-ray diffraction.

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