• The Korean Journal of Ceramics
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• 제3권4호
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• pp.274-278
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• 1997

(Ba, Sr) TiO$_3$(BST) thin films were prepared on RuO$_2$/Si substrates by rf magnetron sputtering and annealing was followed at temperatures ranging from 550 to 80$0^{\circ}C$ in $N_2$or $O_2$atmosphere. The effects of annealing conditions on the properties of BST film deposited on RuO$_2$bottom electrodes were investigated. It was found that the crystallinity. surface roughness, and grain size of BST films vary with the annealing temperature but they are not dependent upon the annealing atmosphere. The flat region in the current-voltage (I-V) curves of BST capacitors shortened with increasing annealing temperature under both atmospheres. This is believed to be due to the lowering of potential barrier caused by unstable interface and the increase of charge The shortening of the flat region by $O_2$annealing was more severe than that by $N_2$-annealing. As a result, there was no flat region when the films were annealed at 700 and 80$0^{\circ}C$ in $O_2$atmosphere. The dielectric properties of BST films were improved by annealing in either atmosphere. however, a degradation with frequency was observed when the films were annealed at relatively high temperature under $O_2$atmosphere.

• 한국안전학회지
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• 제31권5호
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• pp.22-27
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• 2016

The Electrostatic Charge Prevention Technology is a core factor that highly influences the yield of Ultra High Resolution Flat Panel Display and high-integrated semiconductor manufacturing processes. The corona or x-ray ionizations are commonly used in order to eliminate static charges during manufacturing processes. To develop such a revolutionary x-ray ionizer that is free of x-ray radiation and has function to control the volume of ion formation simultaneously is a goal of this research and it absolutely overcomes the current risks of x-ray ionization. Under the International Commission on Radiological Protection, it must have a leakage radiation level that should be lower than a recommended level that is $1{\mu}Sv/hour$. In this research, the new generation of x-ray ionizer can easily control both the volume of ion formation and the leakage radiation level at the same time. In the research, the test constraints were set and the descriptions are as below; First, In order not to leak x-ray radiation while testing, the shielding box was fully installed around the test equipment area. Second, Implement the metallic Ring Electrode along a tube window and applied zero to ${\pm}8kV$ with respect to manage the positive and negative ions formation. Lastly, the ion duty ratio was able to be controlled in different test set-ups along with a free x-ray leakage through the metallic Ring Electrode. In the result of experiment, the maximum x-ray radiation leakage was $0.2{\mu}Sv/h$. These outcome is lower than the ICRP 103 recommended value, which is $1{\mu}Sv/h$. When applying voltage to the metallic ring electrode, the positive decay time was 2.18s at the distance of 300 mm and its slope was 0.272. In addition, the negative decay time was 2.1s at the distance of 300 mm and its slope was 0.262. At the distance of 200 mm, the positive decay time was 2.29s and its slope was 0.286. The negative decay time was 2.35s and its slope was 0.293. At the distance of 100 mm, the positive decay time was 2.71s and its slope was 0.338. The negative decay time was 3.07s and its slope was 0.383. According to these research, the observation was shown that these new concept of ionizer is able to minimize the leakage radiation level and to control the positive and negative ion duty ratio while ionization.

• International Journal of Fluid Machinery and Systems
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• 제9권2호
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• pp.160-168
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• 2016

In high speed turbopumps, cavitation occurs and often causes the flow instabilities such as cavitation surge and rotating cavitation. The occurrence of these cavitation instabilities is considered to relate to dynamic characteristics of the cavitation, which are modelled using a cavitation compliance and a mass flow gain factor. Various types of cavitation such as a blade surface cavitation, a tip leakage vortex cavitation, and a backflow vortex cavitation occur at the same time in the inducer and the dynamic characteristics of each cavitation have not been clarified yet in experiments. Focusing on the blade surface cavitation as one of fundamental cavitation, we investigated the dynamic characteristics of the blade surface cavitation on a flat plate hydrofoil in experiments in the present study.

• 한국원자력학회:학술대회논문집
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• 한국원자력학회 1996년도 추계학술발표회논문집(1)
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• pp.39-44
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• 1996

A nodal transport method based on the F$_{N}$ method is developed for the transport calculation in x- y geometry and tested for benchmark problems. Using transverse integration, the two-dimensional transport equation is converted to one-dimensional equations for x, y-directions and the one-dimensional equations are integrated over azimuthal angle. With proper approximations for the transverse leakage, the one-dimensional equations are discretized by using the F$_{N}$ method without truncation error. At present, isotropic approximation of the transverse with a quadratic or flat shape in spatial variable is tested.ted.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.722_723
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• 2009

본 논문은 FEM(Finite elements Method)을 활용하여 가로축길이/외경지름 비가 약 2 정도로, 넓적한 평판형 전동기 해석을 할 때 고려해야 할 사항이다. 즉, 오차 발생 요인중의 하나인 축방향 누설을 고려한 해석 방법으로, 이를 위해 2차원해석과 3차원해석을 비교함은 기본이고, 일반적으로 사용하는 방법보다 효율적인 방법을 제안한다. 그후 일반화의 가능 여부와 다른 방안들을 고려하여 본다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• 대한치과보존학회:학술대회논문집
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• 대한치과보존학회 2001년도 추계학술대회(제116회) 및 13회 Workshop 제3회 한ㆍ일 치과보존학회 공동학술대회 초록집
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• pp.584.1-584
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• 2001

The purpose of this study was to evaluate the effects of various cavity configuration on bond strength and micro leakage of composite restoration. The specimens were prepared as followed; For control group(C=1), bovine teeth were wet-ground to expose flat dentin surface and in experimental groups, cylindrical cavities, same all2mm deep and 6mm in diameter(C=2.3), 4mm(C=3.0), and 3mm(C=3.7) were prepared.(omitted)

• 전력전자학회논문지
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• 제17권2호
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• pp.121-128
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• 2012

In this paper, a new planar transformer with a novel core configuration that can regulate the leakage inductance is proposed and described in detail. In order to design the slim size power system for flat panel TV, Two planar transformers applied to LLC resonant converter are connected in series at primary and in parallel by the center-tap winding at secondary. In this paper, a 300W low profile LLC resonant converter was built and tested to verify the proposed planar transformer.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.502-507
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• 2004

The forward planar transformer, which had power capacity of 300 W, input voltage of 220 V, output voltage of 15 V, and switching frequency of 300 KHz, was designed and manufactured by using the planar core with large effective area and the flat copper leadframes for miniaturization and high efficiency of the switching mode power supply (SMPS). As well as, a forward converter equipped with the above mentioned planar transformer was manufactured and electromagnetic characteristics were investigated. The numerical value of turns for 1st and 2nd winding were 15 and 2 respectively The self inductance of 1st winding was 1.592 mH, very low leakage inductance of 2.7 $\mu$H, and the coupling factor of 0.928 were obtained at switching frequency of 300 KHz. The high efficiency of 88.62 % for the SMPS equipped with planar transformer was obtained at power capacity of 300 W.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.23-23
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• 1998

High resolution field emission dispplay(FED) devices of 5 inch diagonal in size are fully developped for the applications of near-future flat ppanel dispplays. Under the unique gate-switching drive scheme electron trajectory pprofiles are simulated and tested by considering leakage effects of each ppixel. Uniquely-pprinted sppacer with high asppect ratio are fabricated on real ITO glass for high vacuum ppackaging. In addition new gas aging scheme of stabilizing field emitting array are extensively investigated during the sealing and exhausting pprocess in order to pprevent oxidation effects on the micro tipp. Finally fulll color images of 64 gray scale will be demonstrated.