• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.7
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• pp.69-75
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• 1994

A very fine pattern formation process using double exposure is investigated, which can overcome the resolution limit of optical wafer stepper. The very fine pattern can be obtained by moving the edge profile of large pattern by means of moving the stepper stage. The simulation results show that the light transmittance decrease bellow 9%, and the contrast increase to 16.6% for the 0.3$\mu$m photoresist pattern exposeed by the double exposure using i-line wafer stepper. And the experimental results show that fine photoresist pattern as short as 0.2$\mu$m can be obtained without a loss of photoresist thickness. Also, it proves that the depth of focus for 0.3$\mu$m pattern is longer than $1.5\mu$m. And, the very fine negative photoresist pattern was formmed by using the double exposure technique and the image reversal process.

• Journal of the Korean Graphic Arts Communication Society
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• v.13 no.1
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• pp.13-24
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• 1995

The color filter os made in four methods ; dyeing, printing electrodisposition and pigment dispersed method. Among technologies for color filter manufacture, pigment-dispersed and hybrid method are dominant over all others in commercial manufacture of large scale, fine resolution color filter for liquid crystal display. In this paper to investigate the possibility of the color filter manufacture for LCD by screen printing method, we synthesyzed PVA/sbQ screen emulation for high resolution, estimated image of printed fine pattern and manufactured color filter by screen printing. Results of the study are as follow and found the screen printing method os useful and valid from it. 1. Fine pattern is formed due to photocyclodomerization of -C=C- bond at 342nm, on the other hand unexposured parts are removed in water. 2. sharpness and resolution of fine pattern is improved at mesh streching angle 22.5 and 45 than 0 degree. It is expected due to resistance between inks and mesh streching angles. 3. Spectral characteristics of sample inks were R(640nm), G(535nm), B(470nm), transmittance were R(92%), G(79%), B(70%) and chromaticity coordinate values were R(0.62,0.33), G(0.32,0.59), B(0.14,0.17)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.587-588
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• 2006

Drop-on-Demand (DOD) inkjet printing technology, especially piezo-typed, has been paid attention by industries due to its inherent nature of unbeatable material usage and low cost manufacturing cost. Despite of these key advantages over any other competing manufacturing technologies, the primary disadvantage has been considered as its limited capability to produce fine resolution patterns with a commercially available DOD inkjet print head. Although the main effort has been focused on the production of a DOD inkjet print head with smaller nozzles to overcome this challenging issue, an alternative approach could be taken and it would enable to expand the employment of DOD inkjet printing technology to applications requiring fine patterns further more.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.12.1-12.1
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• 2009

For the micro conductive line, memory device fabrication process use many expensive processes such as manufactur-ing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because nano-metal particles contained inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as FPCB, PCB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line on flexible PCB substrate for the next generation electronic circuit using Ag nano-particles contained ink. To improve the line tolerance on flexible PCB, metal lines are fabricated by sequential prinitng method. Sequential printing method has vari-ous merits about fine, thick and high resolution pattern lines without bulge.

• Journal of Integrative Natural Science
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• v.2 no.4
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• pp.252-264
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• 2009

Lithographic data obtained from PHS(polyhydroxy styrene) having various functionalities were investigated by using a photoacid generator based on diazo and onium type. Chemically amplified photoresist based on the KrF type photoresist was developed by using a photoacid generator and multi-functional resin. Thermal stability for the photoacid generator showed that the increase of loading amount of photoacid generator resulted in the decrease of glass transintion temperature (Tg). The photoacid generators having methyl, ethyl, or propyl group in their cationic structure produced T-top structure in pattern profile due to the effect of acid diffusion during the generation of acid in the resist. The increase of carbon chain length in the anionic structure of photoacid generators resulted in lower pattern resolution due to the interruption of acid diffusion.

• Journal of Information Display
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• v.7 no.3
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• pp.1-4
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1649-1652
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (${\alpha}$- Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated because the 2.5 um fine pattern formation technique is combined with high thermal photo-resist (PR) development. In addition, a novel concept of unique ${\alpha}$-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um finepatterning is a considerably significant technology to obtain higher aperture ratio for higher resolution ${\alpha}$-Si TFT-LCD panel realization.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.37 no.2
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• pp.159-169
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• 2004

Sedimentation and depositional pattern of the fine-grained sediments in the southeastern inner shelf of Korea were studied using a very high-resolution seismic profiles and sediment data. The recent mud deposits up to 45 m thick are distributed in the inner shelf forming a nearshore belt from the eastern part of Geoje Island to off the Pohang along the coast. The sediment in this area consists of homogeneous mud with mean grain size between $8.6\;to\;5.3\phi$ and does not show any distinct variability It gradually becomes finer and well sorted northeastward along the coast. Sediments normally appear as structureless massive mud but X-radiographs show that some bioturbation and faint lamination are present. The sediments accumulate at a rate of 0.18-0.44 cm/yr and the rate coincides well with the long-term (a 1000-year scale) accumulation based on very high-resolution seismic data. Distribution of wet bulk density and velocity shows a gradual increase from the southeastern part of Ulsan to off Pohang, whereas porosity shows a reverse pattern. Correlations between velocity and porosity/mean grain size are different from other regions compared, due to the difference of sediment texture and sedimentary environment. The recent shelf deposits are seismically characterized by three distinct facies: 1) well-stratified (near the river mouth), 2) semi-transparent (eastern part of Geoje Island), and 3) transparent (off Ulsan). The results suggest that fine-grained sediment derived from rivers, forming a nearshore mud belt, have been transported northeastward by the northeastward-flowing coastal current.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.11 no.2
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• pp.1-6
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• 2012

Recent ultra-precision machining systems have nano-scale resolution, and can machine various shapes of complex structures using five-axis driven modules. These systems are also multi-functional, which can perform various processes such as planing, milling, turning et al. in one system. Micro machining technology using these systems is being developed for machining fine patterns, hybrid patterns and high aspect-ratio patterns on large-area molds with high productivity. These technology is and will be applied continuously to the fields of optics, display, energy, bio, communications and et al. Domestic and foreign trends of micro machining technologies for flat molds were investigated in this study. Especially, we focused on the types and the characteristics of ultra-precision machining systems and application fields of micro patterns machined by the machining system.