• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 춘계학술대회 논문집 에너지변화시스템부문
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• pp.259-262
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• 2009

Several universities in Korea are beginning studies related to soft stamping processes but since the studies are done with manual works thus systematic tests can't be performed due to difficulties in producing reproducible and repeatable fine patterns. Therefore, the phenomenon of destruction of the pattern forms of elastic polymers occurred during working because of inconsistent printing pressures and pinting time and there have been difficulties in maintaining flatness or producing uniform and fault-free fine structures in pinting large areas and also, there have been difficulties in multi-layered processes as patterns were changed by contacts in registering and errors in alignments. The purpose of development of this technology is to improve the process of soft lithography so that contacts between PDMS stamps and metal coated substrates in order to develop a stamp printing device that can not only shorten but also optimize processes, secure reproducibility and repeatability and is advantageous in printing large areas. Also, using this technology, this author is to develop equipment technologies and applied technologies for nano grade pattern printing processes with new concepts based on fine contact printing processes in order to apply them to diverse nano pattering processes.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1393-1398
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• 2009

We once have announced that we developed a horizontal large-area alignment system with an alignment accuracy of < ${\pm}3{\mu}m$ and an alignment time of < 30 seconds, a core process module for RGB direct pattering by using a fine metal mask, which can process a Gen 4 ($730{\times}920mm^2$) substrate for high resolution OLED products. In this article, we presents a brand-new vertical alignment system for a even larger substrate of Gen 5 and beyond which can provide a better alignment accuracy and a higher throughput. The newly developed system exhibits an alignment accuracy of < ${\pm}2{\mu}m$ and an alignment time of < 20 seconds which, we believe, can open a new era for manufacturing large-size OLED monitors and TVs.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.648-657
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• 1995

정보처리의 다양화, 고속화를 위하여 장래의 집적회로는 다량의 정보를 단시간에 처리하지 않으면 안된다. 종래, 3년에 4배의 고집적화가 실현되어 LSI개발에 기술 견인차의 역할을 하고 있는 DRAM(Dynamic Random Access Memory)은 미세화기술의 한계를 우려하면서도 오히려 개발에 박차를 가하고 있다. 이러한 DRAM의 미세, 대용량화에는 미세가공 기술, 새로운 메모리 셀과 트랜지스터 기술, 새로운 회로 기술, 그 이외에 재료박막기술, Computer aided design/Design automation(CAD/DA) 기술, 검사평가기술 혹은 소형팩키지(package)기술등의 광범위한 기술발전이 뒷받침되어 왔다. 그 중에서 미세가공 기술 및 새로운 트랜지스터 기술과 메모리 셀 기술을 중심으로 개발 동향을 살펴보고 최근에 발표된 1Gbit DRAM의 시제품 기술에 대하여 분석해 보기로 한다.

• 한국표면공학회지
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• 제45권6호
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• pp.242-247
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• 2012

Yb-doped ITO (ITO:Yb) films were deposited on unheated non-alkali glass substrates by magnetron cosputtering using two cathodes (DC, RF) equipped with the ITO and $Yb_2O_3$ target, respectively. The composition of the ITO:Yb films was controlled by adjusting the RF powers from 0 W to 480 W in 120 W steps with the DC power fixed at 70 W. The ITO:Yb films had a higher crystallization temperature ($200^{\circ}C$) than that of the ITO films ($170^{\circ}C$), which was attributed to both larger ionic radius of $Yb^{3+}$ and higher bond enthalpy of $Yb_2O_3$, compared to ITO. This amorphous ITO:Yb film post-annealed at $170^{\circ}C$ showed a resistivity of $5.52{\times}10^{-4}{\Omega}cm$, indicating that a introduction of Yb increased resistivity of the ITO film. However, these amorphous ITO:Yb films showed a high etching rate, fine pattering property, and a very smooth surface morphology above the crystallization temperature of the amorphous ITO films (about $170^{\circ}C$). The transmittance of all films was >80% in the visible region.