• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.98-104
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• 2013

$VO_2$ is an attractive thermochromic material, in which its electrical and optical properties can be switched by the structural phase-transition about $68^{\circ}C$. Recently, graphene is also a rising material which is researched as a transparent electrode because of its superior electrical and optical characteristics. In this respect, we try to fabricate the hybridized films using $VO_2$ and graphene on transparent sapphire substrate and then we investigate a structure and characterize an optical property for the samples as a function of temperature. According to the result of IR-transmittance analysis of $VO_2$ films as a function of temperature, the graphene-supported sapphire substrates are better about 10% than the bare sapphire substrates. The mean phase transition temperatures are also decreased as the number of graphene-layers increased and the hysteresis of phase transitions are narrowed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.4
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• pp.2391-2400
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• 2015

Weather proof steels are used for steel bridges due to its high corrosion resistance under atmospheric conditions. However, instead of forming stabilized rust layers, general rust occurs on weather proof steels under high humidity condition close to seawater or shady places. In Japan, therefore, they perform rust stabilization treatment instead of unpainted treatment due to severe atmospheric conditions. However, most of domestic weather proof steels were constructed unpainted in the form of closed box-girder, which makes the periodical repetition of dry and wet hard to occur. For the steel bridges constructed on the Han river, the evaporation of water, dew condensation due to temperature change, and stagnant water due to rain affect harmfully on the formation of passive film on weather proof steels. Thus, in this research, in order to analyze corrosion properties inside the closed box-girder for the unpainted weather proof steel bridge in the waterworks safety zone, multiple ways of analysis such as observation with eyes, cellophane-tape test, steel thickness measurement, surface corrosion potential measurement, electron microscope analysis, and X-ray diffraction analysis of the rust were performed. As a result, unstable rust layer was observed inside the closed box-girder, and severe corrosion was observed on the top and bottom of the flanges due to the effects of stagnant water caused by rain, dew condensation, and de-icing materials.

• Journal of Sensor Science and Technology
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• v.6 no.6
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• pp.476-482
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• 1997

A portable electronic nose system has been fabricated and characterized using an oxide semiconductor gas sensor array and pattern recognition techniques such as principal component analysis and back-propagation artificial neural network. The sensor array consists of six thick-film gas sensors whose sensing layers are Pd-doped $WO_{3}$, Pt-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$, $TiO_{2}-Sb_{2}O_{5}-Pd$-doped $SnO_{2}$ + Pd coated layer, $Al_{2}O_{3}$-doped ZnO and $PdCl_{2}$-doped $SnO_{2}$. The portable electronic nose system consists of an 16bit Intel 80c196kc as CPU, an EPROM for storing system main program, an EEPROM for containing optimized connection weights of artificial neural network, an LCD for displaying gas concentrations. As an application the system has been used to identify 26 carbon monoxide/hydrocarbon (CO/HC) car exhausting gases in the concentration range of CO 0%/HC 0 ppm to CO 7.6%/HC 400 ppm and the identification has been successfully demonstrated.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.14 no.4
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• pp.189-193
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• 1981

An apparatus for continuous measurements of sorption isotherm of dried food was manufactured to shorten the time required for equilibration. The apparatus was so designed that the temperature, air velocity and relative humidity in the experimental chamber could be controlled. The use of dynamic stream of conditioned air with a velocity of 0.2m/sec, instead of static atmosphere, allowed a faster equilibration of dried filefish muscle at $25^{\circ}C$. The mean time necessary for the equilibration of dried filefish muscle at the water activity of a given state to a higher water activity was about 45 hours. The monolayer moisture content of dried filefish muscle calculated from BET-equation was 0.092 kg water /kg dry matter at $25^{\circ}C$.

• Journal of Korean Academy of Oral and Maxillofacial Radiology
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• v.29 no.1
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• pp.149-159
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• 1999

Purpose: The purpose of this study was to evaluate cervical lymph node metastasis of oral squamous cell carcinoma patients by MRI film and neural network system. Materials and Methods: The oral squamous cell carcinoma patients(21 patients. 59 lymph nodes) who have visited SNU hospital and been taken by MRI. were included in this study. Neck dissection operations were done and all of the cervical lymph nodes were confirmed with biopsy. In MR images. each lymph node were evaluated by using 6 MR imaging criteria(size. roundness. heterogeneity. rim enhancement. central necrosis, grouping) respectively. Positive predictive value. negative predictive value. and accuracy of each MR imaging criteria were calculated. At neural network system. the layers of neural network system consisted of 10 input layer units. 10 hidden layer units and 1 output layer unit. 6 MR imaging criteria previously described and 4 MR imaging criteria (site I-node level II and submandibular area. site II-other node level. shape I-oval. shape II-bean) were included for input layer units. The training files were made of 39 lymph nodes(24 metastatic lymph nodes. 10 non-metastatic lymph nodes) and the testing files were made of other 20 lymph nodes(10 metastatic lymph nodes. 10 non-metastatic lymph nodes). The neural network system was trained with training files and the output level (metastatic index) of testing files were acquired. Diagnosis was decided according to 4 different standard metastatic index-68. 78. 88. 98 respectively and positive predictive values. negative predictive values and accuracy of each standard metastatic index were calculated. Results: In the diagnosis of using single MR imaging criteria. the rim enhancement criteria had highest positive predictive value (0.95) and the size criteria had highest negative predictive value (0.77). In the diagnosis of using single MR imaging criteria. the highest accurate criteria was heterogeneity (accuracy: 0.81) and the lowest one was central necrosis (accuracy: 0.59). In the diagnosis of using neural network systems. the highest accurate standard metastatic index was 78. and that time. the accuracy was 0.90. Neural network system was more accurate than any other single MR imaging criteria in evaluating cervical lymph node metastasis. Conclusion: Neural network system has been shown to be more useful than any other single MR imaging criteria. In future. Neural network system will be powerful aiding tool in evaluating cervical node metastasis.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.67-75
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• 2005

For th aim of lightweight microwave absorbers, conductive and magnetic microspheres are fabricated by plating of Co films on hollow ceramic microspheres of low density. Metal plating was carried out in a two-step electroless plating process (pre-treatment of activation and plating). Uniform coating of the film with about $2{\~}3{\cal}um$ thickness was identified by SEM. High-frequency magnetic and microwave absorbing properties were determined in the rubber composites containing the Co-coated microspheres. Due to conductive and ferromagnetic behavior of the Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. Due to those electromagnetic properties, high absorption rate (25 dB) and thin matching thickness ($2.0{\~}2.5{\cal}mm$) are predicted in the composite layers containing the metal-coated microspheres of low density (about 0.84 g/cc) for the electromagnetic radiation in microwave frequencies.

• Polymer(Korea)
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• v.37 no.2
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• pp.127-134
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• 2013

The vascular endothelial cells are the inner layers of blood vessels. It regulates the function of blood vessels and proliferation of vascular smooth muscle cells. Poly(lactide-co-glycolic acid) (PLGA) is a biodegradable synthetic polymer with a well-controlled degradation rate and an acceptable mechanical strength. It can be easily fabricated into many shapes. Silk consists of 18 amino acids. It found important for attaching cells cultured in vitro, and maintaining cell functions. In this study, we fabricated silk/PLGA biomaterial hybrid films of 0, 10, 20, 40 and 80 wt% silk. We performed MTT, SEM, ELISA, and immunocytochemistry analyses. We confirmed the adhesion and the proliferation of HAECs on silk/PLGA according to the content of silk, and 40 wt% silk/PLGA hybrid films have superior adhesion and proliferation properties. These results demonstrate that silk/PLGA hybrid films provide suitable surfaces for HAECs, and there is the effect of silk on cell growth and proliferation.

• Journal of Conservation Science
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• v.32 no.4
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• pp.501-510
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• 2016

In this study, we investigated the degradation of adhesives when exposed to ultraviolet light irradiation using samples of lacquer (L), treated lacquer (TL), lacquer mixed with glue (LG), and urushiol mixed with glue (UG). Four types of film specimens were collected under the ultraviolet exposure time, and gloss test, tensile shear strength test, scanning electron microscope analysis, and infrared spectroscopic analysis were conducted for the specimens. LG and UG showed lowering rate of gloss is somewhat later than L. Also, it was observed that with increasing exposure time to ultraviolet irradiation, the surface of L began to show spherical pits and cracks when the polysaccharide layers started to be exposed, whereas the surfaces of LG and UG remained smooth. The Infrared spectra of L and TL showed that the intensity of the overall peak decreased with increasing ultraviolet irradiation time. There was no change in the peak intensity of LG, but for UG, the peaks at $3013cm^{-1}$, $1593cm^{-1}$ and so on disappeared and the overall intensity declined. The tensile shear strength of LG and UG was maintained or increased as compared to the initial test, whereas the tensile shear strength of L decreased sharply after 600 h. LG and UG exhibited fewer changes as a result of high temperature and humidity conditions, and they retained their strength under UV exposure. These results indicate that LG and UG are more durable than L when subjected to environmental change.