• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.145.2-145.2
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• 2016

We report the phase transformation of Co thin films on a sapphire substrate induced by laser irradiation. As grown Co films were initially strained and tetragonally distorted. With low power laser irradiation, the surface was ruptured and irregular holes were formed. As the laser power was increased, the films changed into round shape Co nanocrystals with well-defined 6-fold structure. By measuring the XRD of Co nanostructure as a function of laser energy densities, we found that the change of morphological shapes from films to nanocrystals was accompanied with decrease of the tetragonal distortion as well as strain relaxation. By measuring the size distribution of nanocrystals as a function of film thickness, the average diameter is proportional to 1.7 power of the film thickness which was consistent with the prediction of thin film hydrodynamic (TFT) dwetting theory. Finally, we fabricated the formation of size controlling nanocrystals on the sapphire substrate without strain.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.1
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• pp.92-99
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• 1994

Diamond thin film was deposited on n type (100) Si substrate by MPECVD(Microwave plasma Enhanced Chemical Vapor Deposition). For the increase in nucleation density of diamond, Si substrate was pretreated by diamond powder or negative bias voltage was applied to the substrate during the initial deposition. In the case of retreated Si substrate, the diamond thin film quality was enhanced with increasing the total pressure in the range of 20~150 Torr. For the negative bias voltage, the formation condition of the diamond was seriously affected by $CH_4$ concentration and total pressure. The formation condition will be discussed with electrical current of substrate generated by plasma ions which depend on $CH_4$concentration, bias voltage, and total pressure.

• Korean Journal of Materials Research
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• v.16 no.3
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• pp.151-156
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• 2006

A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

• Transactions of the Korean Society of Automotive Engineers
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• v.16 no.2
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• pp.166-174
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• 2008

Numerical study on the impingement process and the fuel film formation of the hollow-cone fuel spray was conducted under vaporization condition, and the effect of the wall cavity angle on spray-wall impingement structure was investigated. A detailed understanding of this phenomena will help in designing injection systems and controlling the strategies to improve engine performance and exhaust emissions of the Gasoline Direct Injection (GDI) engine. The improved Abramzon model was used to model the spray vaporization process and the Gosman model was adopted for modeling of spray-wall impingement process. The calculated results of the spray-wall impingement process were compared with experimental results. The velocity field of the ambient gas, the Sauter Mean Diameter (SMD) and the generated fuel film on the wall, which are difficult to obtain by the experimental method, were also calculated and discussed. It was found that the radial distance after the wall impingement and the SMD decreased with increasing the cavity angle and the temperature.

• Proceedings of the Korea Contents Association Conference
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• 2004.11a
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• pp.234-239
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• 2004

Daejeon metropolitan city is now financing an undertaking for building the film production town in daeduk valley as one of strategic industries, at this point of time it was under consideration making Daedeok Valley Directory to understanding the present position as the source technology and future practical application for the making film contents. This study deals with information design for the Daeduk Valley directory for the practical use. In detail, with emphasis on the design planning and formation of Daeduk Valley directory, researching methods of present position about the source technology and formation of information architecture of the directory book.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.E1
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• pp.17-24
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• 2001

For the purpose of collecting fog droplets as a function of size a new sampling method was developed in this study. Formation of 100$\pm$10㎛ thickness of polymeric water absorbent film (PWAF) on a nuclepore filter could be successfully realized. Also applicability of particle induced X-ray emission (PIXE) method to the chemical analysis of size-segregated fog droplets collected on PWAF was examined experimentally with synthetic fog droplets generated from a nebulizer. Absorption capacity of S-PAAS polymeric water absorbent shows marked decreases in the range less than 1 wt% and slight decrease between 1 and 3.5 wt% of every salt concentration. Dependency of absorption capacity on pH shows the maximum at pH 7. No apparent peak which can influence the quantitative analysis of elements dissolved and suspended in fog droplets was found at PIXE spectrum of PWAF blank. PWAF kept the original shape without rupture under the PIXE analytical conditions of beam intensity for 10 to 60 nA and irradiation time of 4∼5 min. It should be said that the proposed new technique in the work is helpful to get more detailed information of fog droplets, to clarify the fog formation processes, and to develop a model of acid deposition process.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Journal of Sensor Science and Technology
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• v.18 no.4
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.985-993
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• 2006

An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1420-1423
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• 1997

To make clearly breakdown rl1cchanism and path at interface of crystal and amorphous region, we fabricated HDPE and LDPE thin film by dropping solution onto glass substrate. then annealed the film at $140^{\circ}C$. Shperulites formation and its interface prepared from of two different materials differ from each other. Comparing breakdown site and breakdown field of HDPE with those of LDPE, we can demonstrate the reason that breakdown holes in HDPE are concentrated on the region of interface. From the result, It is appeared that interface of crystallites lead not to weakness as electrical insulating materials.