• Korean Journal of Materials Research
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• v.8 no.10
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• pp.961-968
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• 1998

In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.271-280
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• 2001

An NAO friction material (low-steel type) containing 15 ingredients was investigated to study the role of transfer film on the friction characteristics. The friction material specimens with extra 100% of each ingredient were tested using a pad-on-disk type tribotester. A non-destructive method of measuring the transfer film was developed by considering the electric resistance of the transfer film. Results showed that solid lubricants and iron powder assisted transfer film formation on the rotor surface. Average friction coefficient was independent of transfer film thickness in this experiment. On the other hand, the thick transfer film on the rotor surface reduced the amplitude of friction oscillation under temperature conditions ( 250$^{\circ}C$) that transfer film forms.

• Microbiology and Biotechnology Letters
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• v.24 no.6
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• pp.733-737
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• 1996

The formation of microbial films(biofilm) by a non-sulfur phototrophic bacteria, Rhodopseudomonas capsulata, on inorganic media was studied. Porous ceramic beads(PCB) were superior to other immobilizing media for the biofilm formation in a packed-bed reactor. It was found that the formation of microbial films favored a lower hydraulic retention time, showing a higher ratio of cells attatched to the media to those suspended in the solution. The cell concentration in the biofilm reactor was as high as 11,400mg/l, which is 8-folds of the cell concentration in an ordinary suspended treatment. It was observed that the formation of micribial film by R. capsulata followed a general serial process of cell attachment, microcolony formation, and biofilm formation. The microbial films thus formed was very stable even for an extremely high volumetric BOD loading rate of 15gBOD/l day. The scanning electron micrographs of the microbial films showed that the cells were attached to both the surface and pores of the media.

• Journal of the Semiconductor & Display Technology
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• v.7 no.2
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• pp.1-5
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• 2008

Silicide formation process and the formation sequence were investigated in this study. It was postulated that the formation of the second silicide phase involves glass formation between the first silicide phase and Si given that a thin metal film is deposited on a Si substrate. The concentration of glass was assumed to be located where the free energy of the liquid alloy with respect to the first nucleated compound and solid Si (${\Delta}$G') is most negative. It was also mentioned that the glass concentration is close to the composition of the second phase in order to achieve the maximum energy degradation. It was shown that the minimum ${\Delta}$G' concentration can be estimated by interpolating the portion of the liquidus where the liquid alloy is in equilibrium with the two solid constituents, namely the first compound phase and Si, thereby forming a hypothetical eutectic.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.1
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• pp.13-17
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• 2006

Self-Assembled Monolayers (SAMs) formed by alkanethiol adsorption to thin metal film are widely being investigated for applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecules and bio molecules. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAM structure formation.

• Tribology and Lubricants
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• v.25 no.5
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• pp.335-341
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• 2009

Elastohydrodynamic lubrication (EHL) analysis shows that film thickness is very flat in the contact area and pressure distribution is somehow similar to that of Hertzian contact pressure except the outlet region with pressure spike. These typical patterns of EHL film thickness and pressure are the cases under the steady contact conditions of applied loads and speeds. However, many engineering contacts are rather under the conditions of varying loads and contact speeds, and therefore the predictions for endurance life and performance of machine elements with steady EHL analysis are not suitable in many occasions. This study shows the differences in film thickness formation and pressure distribution between steady and transient contact conditions in several contact cases.

• Journal of the Korean Applied Science and Technology
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• v.15 no.3
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• pp.47-53
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• 1998

The polyimide film surface was modified with KOH aqueous solutions or sulfuric acid. The film thickness was increased by about 10% through the modification of film surface. Hydrolysis of amide bonds and hydration of water induced the increase. The polarity of the film surface increased and identified by contact angle measurement. The depth and roughness of modified was increased. After treatment of surface with water, alkyl and 4-pentyloxyaniline were introduced on the film surface by complex formation between anionic species formed on the imide surface and ammonium ion. The newly introduced alkyl group was identified by FT-IR spectroscopy. Surface polarity reduced dramatically and the roughness was increased after introduction of ammonium salt.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.160-166
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• 2004

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated fer applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecule and bio molecule. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAMs structure formation.

• Journal of Electrical Engineering and Technology
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• v.2 no.4
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.