• Journal of radiological science and technology
• /
• v.3 no.1
• /
• pp.43-48
• /
• 1980

An experimental study was carried out to make a comparison between tube voltage and density of barium sulphate in the stomach radiography. The results were summarized as follows: 1. The percentage of density on concentrations of barium sulphate as contrast media could not show in differences with changes of voltages applied X-ray tube. 2. The changes of density visualized on X-ray film mainly depend upon with thickness of stomach filled barium sulphate than the ratio of barium sulphite and plain water volume. 3. The lesions positioned in upper part within stomach exhibited their best discrimination performanance with depth in the low tube voltage, followed in order by the middle part and lower part. However, the discrimination performanance at the high tension radiography uniformly visualized over X-ray film without density in change.

• Korean Journal of Digital Imaging in Medicine
• /
• v.3 no.1
• /
• pp.126-132
• /
• 1997

Purpose : To apply to Program of Auto processor quality control after comparison of Film density variations with amendments to Auto density by using Check density program and Adjust density program of calibration mode into the Laser imager. Methods : Observe Check and Adjust density variations on the Control chart with standard step and value during seven months from December, 1995 to June, 1956 extending twice a week. (1) Measure density value on the steps after printing out 17-step sensitometric pattern of the Check density program. (2) In the same way, measure density values after amending density by using Adjust density program If they are exceeding allowable error limit. Results : In case of Check density program, the exceeding limit rates of Density difference(DD) and Middle density(MD) are: FL-IM3543 DD=75%. MD=72.5%, FL-IMD DD=0%. MD=30.8%(14.5%) After amending density by using Adjust density program, the exceeding limit rates of all both Laser imager were zero percent. The standard deviations are show lower FL-IM D than FL-IM3543 on the Check density control chart, but higher on the Adjust density control chart. Conclusion : (1) Check density variations by printingout sensitometric pattern extending once a week at least for quality control of the Laser imager. (2) In case of a dusty place, check the Laser beam transmission after cleaning Laser optical unit extending once a month. (3) Be sure to measure and check density values by using adjust density program if they are exceeding allowable error limit. (4) Maintain much better film density by performing the adjust density program even if check density values are existed within normal limit.

• Journal of Photoscience
• /
• v.10 no.2
• /
• pp.199-202
• /
• 2003

The relationship between the morphology of nanostructured TiO$_2$ films and the photo-injected electron transport has been investigated using intensity-modulated photocurrent spectroscopy (IMPS). For this purpose, three different TiO$_2$ films with 5 ${\mu}{\textrm}{m}$ thickness are prepared: The rutile TiO$_2$ film with 500 nm-sized cluster-like spherical bundles composed of the individual needles (Tl), the rutile TiO$_2$ film made up of non-oriented, homogeneously distributed rod-shaped particles having a dimension of approximately 20${\times}$80 nm (T2), and the anatase TiO$_2$ film with 20 nm-sized spherically shaped particles (T3). Cross sectional scanning electron micrographs show that all of the TiO$_2$films have a quite different particle packing density: poorly packed Tl film, loosely packed T2 film and densely packed T3 film. The electron transport is found to be significantly influenced by film morphology. The effective electron diffusion coefficient D$_{eff}$ derived from the IMPS time constant is an order of magnitude lower for T2 than for T3, but the D$_{eff}$ for the Tl sample is much lower than T2. These differences in the rate of electron transport are ascribed to differences in the extent of interparticle connectivity associated with the particle packing density.ity.

• Journal of the Korean institute of surface engineering
• /
• v.23 no.1
• /
• pp.34-43
• /
• 1990

Al-Si piston alloys such as AlS10CuMg have been anodized to examine apossibility of forming a hard film aat relatively higher temperatures compard with those in conventional sulfuric acid processes. Three types of electrolytes have been employed in this study ; electrolyte A(15% H2SO4, $0^{\circ}C$), electrolyte B(12% H2SO4, 1% oxalic, $10^{\circ}C$), electrolyte C(tartaric acid 125g/L+oxalic 75g/L+aluminum sulfate 225g/L, $25^{\circ}C$). Hard anodisine process in electrolyte B at a current density of 1.54A/dm2 produced a harder film of VHN 396 at a relatibely low film forming voltage compared with those obtained in other electrolyte at equivalent current density. A liner relationship between hardness and abrasion resistance exists for Al-Si piston alloys. The hardness of anodized film decreasees with increasing silicon content in Al-Si alloys and also with bath temperature. The film hardeness of Na-modified alloy os higher than that of P-modified alloy due to its finer microstructre. The film on the silicon phase in Al-Si alloys is observed to be formed by lateral growth of oxide film nucleated at surroundings.

• The Korean Journal of Ceramics
• /
• v.4 no.1
• /
• pp.1-4
• /
• 1998

Diamond film was deposited on Mo substrate at atmospheric pressure using combustion flame apparatus with the addition of H2. At a temperature above 100$0^{\circ}C$, parts of the film were converted into graphites and these were etched by hydrogen atoms. With increasing $C_2H_2/O_2$ ratio, the nucleation density of the film increased. But the greater part of the film was formed with cauliflower-shaped amorphous carbon. These amorphous carbn were crystallized etching amorphous carbon.

• Journal of radiological science and technology
• /
• v.22 no.1
• /
• pp.49-53
• /
• 1999

To inquire its usefulness of the clinical application of intelligent replenishment system of automatic X-ray film processor based on film density, we processed the serial 300 sheets of radiographic film of chest [$14{\times}14"$, HR-C type] and bone [elbow & ankle($8{\times}10"$), skull($10{\times}12"$), hand & foot($11{\times}14"$), pelvis($14{\times}17"$), HR-G type, 68, 70, 77, 85 sheets respectively]. We analyzed the characteristic corves, relative speeds, average gradients and base plus fog densities every twenty five sheets. We also evaluated the developer and fixer replenishment volumes every that time. In the chest and bone radiograph two all, the characteristic curves were little change, and the relative speeds, average gradients and base plus fog densities were within the maximum control limits. The average developer replenishment volumes were about 43m1/sheet and 39m1/sheet respectively. It brings decreased results about 29% in comparison with the conventional replenishment system. In our experiences, we conclude that the intelligent replenishment system of automatic X-ray film processor based on film density maintains image quality consistently, decreases also the replenishment volumes. Therefore, this system will be resulted in economic and environmental effects, and solve problems of over and low replenishment volume.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.6
• /
• pp.581-588
• /
• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.11 no.3
• /
• pp.153-161
• /
• 2011

In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (a-IGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at $V_{DD}$=20 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.7
• /
• pp.669-673
• /
• 2008

ITO thin film was deposited on PC substrate in Facing Targets Sputtering (FTS) system with various sputtering conditions. After it is applied to external bending force, we investigated how change the surface and electrical property of as-deposited ITO thin film. As the L(face-plate distance) of substrate decreases, it found that the maximum crack density is increasing at the center position and decreasing crack density as goes to the edge. So to apply same curvature (r) and bending force to PC substrate with ITO thin film, we fixed the L that is equal to curvature radius (2r). Before bending test, ITO thin films that deposited in the input current of 0.4 A and thickness of 200 nm already had biaxial tensile failure because of each different CTE (Coefficient of Thermal Expansion) and Others had been shown no bending or crack. After bending test, all samples had been shown cracks at about 200 times and as increasing the crack density, resistivity increased.

• Applied Chemistry for Engineering
• /
• v.8 no.1
• /
• pp.84-91
• /
• 1997

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of $H_2$. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above $1000^{\circ}C$, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the $C_2H_2/O_2$ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of $H_2$, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.