• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.357-361
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• 2006

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride and 4,4'-oxydianiline. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2/Vs$, threshold voltage of -0.8 V and on-off current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.70-71
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• 2005

The electrical performances of organic thin-film transistors (OTFTs) have been improved for the last decade. In this paper, it was demonstrated that the electrical characteristics of the organic thin film transistors (OTFTs) were improved by using polymeric material as adhesion layer on gate insulator. We have investigated OTFTs with polyimide adhesion layer which was fabricated by vapor deposition polymerization (VDP) processing and formed by co-deposition of 6FDA and ODA. It was found that the OTFTs with adhesion layer showed better electrical characteristics than with bare layer because of good matching between semiconductor and gate insulator. Our devices of performance are field effect mobility of $0.4cm^2$/Vs, threshold voltage of -0.8 V and on-of current ratio of $10^6$. In addition, to improve the electrical characteristics of OTFT, we have reduced the thickness of adhesion layer up to a few nanometrs.

• Journal of the Korean institute of surface engineering
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• v.22 no.1
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• pp.17-25
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• 1989

The structural Charactesties and adhesion of chemically vapor deposited TiN film on stain less steels have been investated as functions of deposition temperature, surface roughness of sub state, and types of substrates. The grain zine and the lattice parameter of TiN film decreased with decreasing roughness of substates. The(200) preferred orientation was developed dominatly and the lattlice parameter decreased as temperature intereased reardless of the surdless roughnessand type of the substrates used. The surface morphology of TiN film changed from bushed crystal to a plate and then to pyamidal dense crystals with an increase in the deposition temperature. The adhesion of TiN films increased with coating thinkness and decreased with surface roughness in general. The calculations using a Bejamin & Weaver's model have been compard. Maximum valuse of adhesion energy calculated using Laguier's model were W304=331Jm-2,w410=113Jm-2,andW430=107jm-2

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.537-539
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• 2009

We report the improvement in adhesion of IZO thin films through oxygen ($O_2$) plasma treatment of organic polymer film. In conclusion, the $O_2$ plasma treatment of an organic polymer film was accomplished with improving ca. 1.8 times in adhesion than that of the only general etch treatment on the same organic polymer film.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.257-264
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• 1999

Thin reflective films are synthesized by using PVD methods with a bright metal of Al or Ag. For purposes of improving the reflectance and adhesion of such films particularly, substrate bias was applied during sputtering (namely, ion-plating) to enhance the deposition process with higher energy. And we succeeded in fabricating a quality silver film which possesses an adhesion of $85{\;}Kg/\textrm{cm}^2$ and a high reflectivity of more than 96%. Both of reflectivity and adhesion are better in case of bias sputtering as controlled than nonbias sputtering, particularly the bias of 50-100 V showed most effective. The microstructures of sample films were examined by using various equipments and the XRD spectrum in particular showed that <111> direction is the preferred growth orientation.

• Journal of Adhesion and Interface
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• v.5 no.2
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• pp.1-7
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• 2004

A novel carboxyl terminated butadiene-acrylonitrile (CTBN) modified, low temperature cure epoxy film adhesive was developed in this paper. It can be cured at as low as $75^{\circ}C$ for 4 hours with a pressure of 0.1MPa. After post cure at $120^{\circ}C$ for 2 hours, the bonding strengths of Phosphoric Acid Anodizing(PAA) surface treated aluminum adherend were similar to those of structural film adhesives curing at $120^{\circ}C$. It is suitable to bond both metal/composite laminate-to-laminate and laminate to honeycomb structure.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.18.1-18.1
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• 2011

Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Tribology and Lubricants
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• v.24 no.5
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• pp.255-263
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• 2008

Adhesion tests were conducted to investigate the adhesion characteristics between mold and thermoplastic polymer film. Coating of anti-sticking layer (ASL), a kind of polymer material, imprint pressure, and separation velocity were considered as the process conditions. A piece of fused silica without patterns on its surface was used as a mold and the thermoplastic polymer films were made on Si substrate by spin-coating the commercial polymer solution such as mr-I PMMA and mr-I 7020. The ASL was derived from (1H, 1H, 2H, 2H - perfluorooctyl) trichlorosilane($F_{13}$-OTS) and coated on the fused silica mold in vapor phase. The pull-off force was measured in various process conditions and the surfaces of the mold and the polymer film were observed after separation. It was found that the adhesion characteristics between the mold and the thermoplastic polymer film and the release performance of ASL were changed according to the process conditions. The ASL was effective to reduce the pull-off force and the damage of polymer film. In cases of the mold coated with ASL, the pull-off force did not depend on imprint pressure and separation velocity.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2019.11a
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• pp.229-230
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• 2019

Integrated water-soluble film is dissolved in the rubber asphalt waterproof sheet to secure adhesive strength on freshly cast concrete on the adhesion side of waterproofing layer on the floor slab. In addition, in order to determine whether the water in the concrete slurry can dissolve the water-soluble film sufficiently, the adhesive strength of the waterproofing sheet was compared between difference wetness condition at the upper part of the concrete specimen before the concrete casting.