• 한국정밀공학회지
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• 제27권3호
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• pp.104-110
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• 2010

Cyclic deformations of polymer foam film are simulated using the finite element method. Material of polymer foam film is polypropylene (PP). The calculated polymer foam film is micro-scale thin film has cellular structure. The polymer foam film is used in ferro-electret applications. The polymer foam film is idealized to one cell structure as lens shaped stretched truncated octahedron model. Cyclic deformation is performed by uniaxial stretching. Stretching direction is perpendicular to plane of cellular film. Various cyclic strain amplitudes, pore wall thicknesses, pore shape are investigated to find deformation tendency of cellular structure. Consequently, cellular structure has various macroscopic stresses on cyclic deformation with various pore thickness and pore shape.

• E2M - 전기 전자와 첨단 소재
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• 제10권10호
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• pp.983-988
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• 1997

We investigated the structural and dielectric properties of PZT(20/80)/PZT(80/20) heterolayered thin films that fabricated by the alkoxide-based Sol-Gel method. PZT(20/80)/PZT(80/20) heterolayered thin films were spin-coated on the Pt/Ti/SiO$_2$/Si substrate with PZT(20/80) film of tetragonal structure and PZT(80/20) film of rhombohedral structure by turns. Each layers were dried to remove the organic materials at 30$0^{\circ}C$ for 30min and sintered at $650^{\circ}C$ for 1hr. This procedure was repeated several times to form PZT(20/80)/PZT(80/20) heterolayered films and thickness of the film obtained by one-times of drying/sintering process was approximately 80-90nm. PZt-1, 3, 5 films with top layer of PZT(20/80) film of tetragonal structure showed fine grain structure and PZT-2, 4, 6 films with top layer of PZT(80/20) film of rhombohedral structure showed the dense grain microstructure without rosette-type. Dielectric constant and dielectric loss of the PZT-6 film were approximaterly 1385 and 3.3% respectively. Increasing the number of coatings remanent polarization was increased and coercive field was decreased and the values of the PZT-6 film were 8.13$\mu$C/cm$^2$and 12.5kV/cm respectively.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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• pp.609-611
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• 1995

In this study, we experimented the properties of SOG film as sacrificials layers in surface micromachining and made $SiO_2$ films through spin, bake, cure process. When we culled SOG films once, SOG film thickness is 1000 $\sim$ 3000 ${\AA}$. Then we coaled 200-${\AA}$ SOG film on 9000 ${\AA}$-CVD oxide and then we fabricated test structure, cantilever and ring/beam structure. We estimated deformed structure by SEM. As the results, The deformation of the structure layer in the SOG-coated sacrificial layers is small compared with that or the structure layer on CVD oxide or PSG. In the future, we use multi coated SOG films, SOG film become adequate material as sacrificial layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.52-52
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• 2010

Amorphous carbon films have a variety of potential applications. In most such applications film properties are crucial and highly dependent on the film growth conditions. We here investigate the atomic structure of the films, which is generated at various incidence angles, using the classical molecular dynamics. Varying incidence angle of the deposited carbon atoms, different level of sp hybridization and porosity of the film are captured in our model. As the incidence angle becomes glancing, subplantation of the deposited carbon in vertical direction is significantly reduced, rather bouncing back of the incident carbon with slight modification of surface structure is mainly occurred at the early stage of the film growth. As the surface becomes rougher, shadowing effect at these glancing incidences also becomes more significant, which tends to cause asymmetrical and columnar structure. We describe incidence angle dependence of the evolution of the atomic structure of the film and its corresponding properties.

• Bulletin of the Korean Chemical Society
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• 제31권2호
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• pp.360-364
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• 2010

$Li_4Ti_5O_{12}$ thin film with inverse hemispheric structure was fabricated on a Pt/Ti/$SiO_2$/Si substrate by the sol-gel and dip coating method for use as an anode for 3-dimensional (3D) thin-film batteries. Polystyrene (PS) beads of 400 nm diameter were used to prepare the template for the inverse hemispheric structure. A coating solution prepared using precursor sources was dropped on the template-deposited substrates, which were then calcinated at $400^{\circ}C$. The template was removed by calcination, and the inverse hemispheric structure was successfully formed by an annealing process. The cyclic performance during high-rate charge/discharge processes of the $Li_4Ti_5O_{12}$ film with inverse hemispheric structure was superior to that of the flat $Li_4Ti_5O_{12}$ film.

• 반도체디스플레이기술학회지
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• 제18권4호
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• 한국세라믹학회지
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• 제38권1호
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.226-227
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by electrolysis of methanol was identified as the hydrogenated carbon film with porous structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.346-347
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• 2005

The carbon film was deposited by the electrolysis of methanol solution. From investigations of the Raman spectroscopy and the FTIR spectroscopy, the carbon film deposited by the electrolysis was identified the hydrogenated carbon film with the porous structure. The carbon film deposited by electrolysis of methanol was identified as the hydrogenated carbon film with porous structure.

• 한국표면공학회지
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• 제34권5호
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• pp.455-464
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• 2001

Effect of bombardment of the growing film by energetic particles on its properties is know over many years and is widely used for modification of the film properties. Despite of this there are no final answers on such questions as: what is the mechanism of compositional changes that take place for some compound films deposited under the ion bombardment, how the ion bombardment influences the epitaxial growth, what mechanisms govern the growth of the film on its early stages during deposition under the ion bombardment. The role of composition of film-forming species in formation of film structure is barely investigated or even not investigated at all. Experimental evidence and discussion of the influence of ion bombardment and composition of film-forming species on structure and composition of compound films are briefly considered in the review.