• Corrosion Science and Technology
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• v.22 no.6
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• pp.399-407
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• 2023

This study investigated the formation of oxide films on 6061 aluminum (Al) alloy and their impacts on corrosion resistance efficiency by regulating anodization voltage. Despite advantageous properties inherent to Al alloys, their susceptibility to corrosion remains a significant limitation. Thus, enhancing corrosion resistance through developing protective oxide films on alloy surfaces is paramount. The first anodization was performed for 6 h with an applied voltage of 30, 50, or 70 V on the 6061 Al alloy. The second anodization was performed for 0.5 h by applying 40 V after removing the existing oxide film. Resulting oxide film's shape and roughness were analyzed using field emission-scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Wettability and corrosion resistance were compared before and after a self-assembled monolayer (SAM) using an FDTS (1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane) solution. As the first anodization voltage increased, the final oxide film's thickness and pore diameter also increased, resulting in higher surface roughness. Consequently, all samples exhibited superhydrophilic behavior before coating. However, contact angle after coating increased as the first anodization voltage increased. Notably, the sample anodized at 70 V with superhydrophobic characteristics after coating demonstrated the highest corrosion resistance performance.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.3
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• pp.171-175
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• 1999

Pd films($180{\sim}670{\AA}$ thick) were made by thermal evaporation. Electrical resistance of the films was measured during hydrogen absorption-desorption process at room temperature. Resistance changes as a function of hydrogen pressure in thin films of the PdH system show a strong dependence on film thickness. $({\Delta}R_{\infty}/R_0)_{{\beta}min}$ for a $\670{\AA}$ film is 0.61. For a $\180{\AA}$ film, this is 0.34. Resistance change also depends on sample preparation condition.

• Food Science and Biotechnology
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• v.14 no.1
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• pp.108-111
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• 2005

To improve water-resistance and physical properties of sodium alginate film, effects of sodium alginate and plasticizer concentrations, divalent cation types and concentrations, and immersion time of films into divalent cation solutions on sodium alginate films were evaluated, based on elongation strength (ES), elongation rate (E), water vapor permeability (WVP), and water solubility (WS). Film made from 1.5% sodium alginate solution (w/w) had low WVP and WS, which are optimal characteristics for application of film preparation. Addition of plasticizer increased E and WS. Less than 2% $CaCl_2$ addition and 15min immersion time reduced WVP, WS, and E significantly (p<0.05). Sodium alginate films treated with $CuCl_2$, and $ZnCl_2$ solutions had lower WVP and WS, whereas $MgCl_2$ had no influence on improving water resistance of films.

• Journal of the Semiconductor & Display Technology
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• v.2 no.4
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.98-101
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• 2006

Electron transport properties of nanostructured Pb thin film, consisting of grains, have been studied. Nanostructured thin films were fabricated on a substrate held at low temperature and their thicknesses were less than 10nm. While temperature of the film increased from 1.3 K to room temperature, the change in normal state sheet resistance has been measured. As the annealing temperature varies, the normal state sheet resistance shows a non-monotonic and irreversible change. Such behavior can be understood with the Pb grain growth due to annealing of the film.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.2
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• pp.179-185
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• 2013

The behavior of surface film formation was greatly dependent on the speed of potential cycling. In $LiClO_4$ / EC + DEC, cyclic voltammetry results showed that the peaks originated from surface film formation on graphite electrode at the high charge-discharge rate was shifted to the lower potentials as the charge-discharge rate decrease. This indicates that surface films with different morphology and thickness were formed by different charge-discharge rate. Transmission electron microscopy (TEM) results indicated that the properties such as thickness and morphology of the surface film were greatly affected by the charge-discharge rate. Electrochemical impedance spectroscopy (EIS) showed that the resistance of surface film was affected by the speed of potential cycling. In addition, the charge transfer resistance was also dependent on the charge-discharge rate indicating that the charge transfer reaction was affected by the nature of surface film. TEM and EIS results suggested that the chemical property as well as the physical property of the surface film was affected by the charge-discharge rate.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.33-36
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• 2015

It has increased several decades in the field of Indium Tin Oxide (ITO) transparent thin film, However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials[1]. So far, in order to overcome this disadvantage, we show that a transparent ITO/Ag/i-ZnO multilayer thin film electrode would be more cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report the properties of ITO/Ag/i-ZnO multilayer thin film by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\Box}$ at same visible light transmittance. (minimal point $5.2{\Omega}/{\Box}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• Corrosion Science and Technology
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• v.9 no.6
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• pp.289-293
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• 2010

To investigate the corrosion behavior of tools steel surface in various coating film, the surface of hard coated Ti-Zr-N film on the tool steel by using magnetron-sputtering methods was researched using various experimental methods. STD 61 steels were manufactured by using vacuum furnace and solutionized for 1hr at $1050^{\circ}C$. Steel surface was coated with Ti-Zr-N film at $150^{\circ}C$ and 100W for 1h by using DC-sputtering equipment. Surface characteristics of Ti-Zr-N film coated specimens were investigated by OM, XRD, FE-SEM and nano-scratch tester. And corrosion behaviors of the coated specimen were investigated by polarization test and electrochemical impedance spectroscopy(EG&G Co, PARSTAT 2273. USA). It was found that Ti-Zr-N film coated sample had a thick coated layer and showed a good wear resistance and corrosion resistance of surface compared with ZrN and TiN coated sample. The corrosion resistance and mechanical property of Ti-Zr-N film coated STD 61 alloy increased as sputtering time increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.500-504
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• 2020

Heating films were prepared with composites of poly (methyl methacrylate) and conductive graphite. The as-prepared composite was deposited on a PET film and then fabricated using a bar coater to produce a film with uniform thickness. Copper electrodes were attached to both ends of the as-prepared film, and the heating characteristics of the film were analyzed while applying a DC voltage. The electrical conductivity and heating temperature of the heating films depended on the size, structure, content, and the dispersion characteristics of the graphite in the composite. The thermal energy was adjusted by controlling the electrical energy, based on the Joule heating theory. The electrical resistance of the film was altered in proportion to Ohm's law, and the heating temperature was changed according to the structure of the film (interelectrode spacing or electrode length) and the conductive graphite content. When the content of conductive graphite in the film increases, the electrical resistance decreases, and the heating temperature increases; however, there is no significant change above a certain content (50%).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.58-58
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• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.