• Journal of the Semiconductor & Display Technology
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• v.22 no.2
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• pp.35-39
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• 2023

Silicon oxide thin films have been deposited by plasma-enhanced chemical vapor deposition in SiH4 and N2O plasma along the variation of the gas flow ratio. Optical emission spectroscopy was employed to monitor the plasma and ellipsometry was employed to obtain refractive index of the deposited thin film. The atomic ratio of Si, O, and N in the film was obtained using XPS depth profiling. Fourier Transform Infrared Spectroscopy was used to analyze structures of the films. RI decreased with the increase in N2O/SiH4 gas flow ratio. We noticed the increase in the Si-O-Si bond angles as the N2O/SiH4 gas flow ratio increased, according to the analysis of the Si-O-Si stretching peak between 950 and 1,150 cm-1 in the wavenumber. We observed a correlation between the optical emission intensity ratio of (ISi+ISiH)/IO. The OES intensity ratio is also related with the measured refractive index and chemical composition ratio of the deposited thin film. Therefore, we report the added value of OES data analysis from the plasma related to the thin film characteristics in the PECVD process.

• Journal of Energy Engineering
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• v.7 no.2
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• pp.180-186
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• 1998

In this study, the effect of shear rate on the viscosity variation is examined to understand the flow characteristics of the mixture of bentonite and water. The variation of film thickness according to mixing ratio and viscosity is measured to characterize the film formation. And, the separation of dried film is studied according to film thickness. Specific surface area affecting on adsorption capability is measured using BET method. The viscosity decreases and the film thickness increases as the mixing ratio increases. The separation characteristic of dried film is suitable within a range of 40 to 150 ${\mu}{\textrm}{m}$ in film thickness and 5 to 10% in mixing ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.647-653
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• 2011

In this study, a method to measure the thickness of thin film by EDS (energy dispersive spectroscopy) is suggested. We have developed a model which calculates the thickness of thin film from the characteristic x-ray intensity ratio of the elements in thin film and substrate by considering incident electron beam energy, x-ray generation curve, backscattering and absorption of x-ray, take-off angle of x-ray and tilt angle of the sample. We obtained the relation curve between the film thickness measured experimentally and the x-ray intensity ratio of elements. The film thicknesses calculated from the model agrees quite well with those measured experimentally. Therefore, the thin film thickness can be measured rapidly and accurately by using the model developed in this study and the x-ray intensity ratio obtained in EDS analysis.

• 한국가시화정보학회:학술대회논문집
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• 2002.11a
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• pp.81-84
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• 2002

Dispersion of coolant jets in a film cooling flow field is the result of a highly complex interaction between the film cooling jets and the mainstream. In order to investigate the effect of blowing ratios on the film cooling of turbine blade, cylindrical body model was used. Mainstream Reynolds number based on the cylinder diameter was $7.1\;\times\;10^4$. The free-stream turbulence intensity kept at $5.0\%$ by using turbulence grid. The effect of coolant flow rates was studied for blowing ratios of 0.9, 1.3 and 1.6, respectively. The temperature distribution of the cylindrical model surface is visualized by infrared thermography (IRT). Results show that the film-cooling performance may be significantly improved by controlling the blowing ratio. As blowing ratio increases, the adiabatic film cooling effectiveness is more broadly distributed and the area protected by coolant increases. The mass flow rate of the coolant through the first-row holes is less than that through the second-row holes due to the pressure variation around the cylinder surface.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.283-288
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• 2004

The measurement of ultra low aspect ratio fluid film thickness is very crucial technique both for the verification of lubrication media characteristics and for the clearance design in many precision components such as MEMS, precision bearings and other slideways. Many technologies are applied to the measurement of ultra low aspect ratio fluid film thickness (i.e. elastohydrodynamic lubrication film thickness). In particular, in-situ optical interferometric method has many advantages in making the actual contact behaviors realized with the experimental apparatus. This measurement method also does the monitoring of the surface defects and fractures happening during the contact behavior, which are delicately influenced by the surface conditions such as load, velocity, lubricant media as well as surface roughness. Careful selection of incident lights greatly enhances the fringe resolutions up to $\~1.0$ nanometer scale with digital image processing technology. In this work, it is found that coaxial aligning trichromatic incident light filtering system developed by the author can provide much finer resolution of ultra low aspect ratio fluid film thickness than monochromatic or dichromatic incident lights, because it has much more spectrums of color components to be discriminated according the variations of film thickness. For the measured interferometric images of ultra low aspect ratio fluid film thickness it is shown how the film thickness is finely digitalized and measured in nanometer scale with digital image processing technology and space layer method. The developed measurement system can make it possible to visualize the contact deformations and possible fractures of contacting surface under the repeated loading condition.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2247-2252
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• 2012

In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.41 no.5
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• pp.483-491
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• 1992

Plasma silicon oxynitride film has been applied as a final passivation layer for semiconductor devices, because it has high resistance to humidity and prevents from alkali ion's penetration, and has low film stress. Structure properties of plasma silicon oxynitride film have been studied experimentally by the use of FT-IR, AES, stress gauge and ellipsometry. In this experiment,Si-N bonds increase as NS12TO/(NS12TO+NHS13T) gas ratio increases. Peaks of Si-N bond, Si-H bond and N-H bond were shifted to high wavenumber according to NS12TO/(NS12TO+NHS13T) gas ratio increase. Absorption peaks of Si-H bond were decreased by furnace anneal at 90$0^{\circ}C$. The atomic composition of film represents that oxygen atoms increase as NS12TO/(NS12TO+NHS13T) gas ratio increases, to the contrary, nitrogen atoms decrease.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.746-751
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• 2001

We used a cylindrical model which simulates turbine blade leading edge to investigate the effects of free-stream turbulence intensity and blowing ratio on film cooling of turbine blade leading edge. Tests are carried out in a low-speed wind tunnel on a cylindrical model with three rows of injection holes. Mainstream Reynolds number based on the cylinder diameter was $7.1\times10^4$. Two types of turbulence grid are used to increase a free-stream turbulence intensity. The effect of coolant blowing ratio was studied for various blowing ratios. For each blowing ratios, wall temperatures around the surface of the test model are measured by thermocouples installed inside the model. Results show that blowing ratios have small effect on spanwise-averaged film effectiveness at high free-stream turbulence intensity. However, an increase in free-stream turbulence intensity enhances significantly spanwise-averaged film effectiveness at low blowing ratio.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.4
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• pp.512-518
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• 2000

A wall fuel-film flow model is developed to predict the effect of a wall-fuel-film on air-fuel ratio in an SI engine in transient conditions. Fuel redistribution in the intake port resulting from charge backflow and a simple liquid fuel behavior in the cylinder are included in this model. Liquid fuel film flow is calculated of every crank angle degree using the instantaneous air flow rate. The model is validated by comparing the calculated results and corresponding engine experiment results of a commercial 4 cylinder DOHC engine. The predicted results match well with the experimental results. To maintain the constant air-fuel ratio during transient operation. the fuel injection rate control can be obtained from the simulation result.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.909-916
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• 2005

The structural and electrical property of RF magnetron sputtered ZnO thin film have been studied as a function of RF power, substrate temperature, oxygen/argon gas ratio and film thickness at constant sputtering power, sputtering working pressure and target-substrate distance. To analyze a crystallo-graphic properties of the films, $\theta$/2$\theta$ mode X-ray diffraction, SEM, and AFM analyses. C-axis preferred orientation, resistivity and surface roughness highly depended on oxygen/argon gas ratio. The resistivity of ZnO thin film(6000 ${\AA}$) rapidly increased with increasing oxygen ratio and the resistivity value of $9 {\ast} 10^7 {\Omega}cm$ was obtained at a working pressure of 10 mTorr with the same oxygen/argon gas ratio. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with the same oxygen/argon gas ratio showed the excellent roughness value of 28.7 ${\AA}$. With increase of the substrate temperature, The C-axis preferred orientation of ZnO thin film increases and the resistivity decreases due to deviation from the stoichiometric ZnO due to oxygen deficiency.