• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.33-40
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• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 한국재료학회지
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• 제21권6호
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• pp.309-313
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• 2011

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and $PdCl_2$ solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 $nF/cm^2$, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of $10^4{\mu}A$.

• 전기학회논문지
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• 제59권10호
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• pp.1839-1844
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• 2010

A power management controller circuit with switched capacitor mode down regulator and battery charger block for semi-active RFID tags was proposed and fabricated. The main purposes of the proposed switched capacitor mode down regulator and battery charger block are to reduce standby current and to provide a self-controlled thin film battery charger by detecting the received RF power, respectively. Fabricated chip area is $360,000{\mu}m^2$ and measured standby current was about $1.3{\mu}A$. To further reduction of standby current, a wake-up circuit has to be included in the power management controller.

• Journal of Power Electronics
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• 제13권1호
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• pp.94-103
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• 2013

A capacitor deterioration of LCL-filter grid-connected PWM converters is progressed by the self-healing mechanism. It leads to the degradation of the filter performance and drop of power factor. Thus, it is required to diagnose fault-point of capacitors and determine the replacement time. Typically, the fault of capacitors is determined when the capacitance is reduced up to 80% from initial value. This paper proposes algorithm to the determine capacitor replacement time of an LCL filter. The algorithm takes the advantage of change of the response on the injected resonant frequency corresponding to 80% value from the initial capacitance. The results of the algorithm are demonstrated through simulations and experiments.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1115-1121
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• 1998

MLS capacitor with lipid ultra thin films were deposited by Langmuir-Blodgett (LB) method on the silicon wafer. The current versus voltage and capacitance versus voltage relationships are depend on the applied voltage, electrode area and electrode materials. LB films deposited were made of L-$\alhpa$-DLPC, the 1 layer’s thickness of 35${\AA}$ was measured by ellipsometer. And MLS capacitor with different electrode materials, the work function of these materials was investigated to increase the leakage current. The result indicated the lower leakage current and very high saturation value of capacitance was reached within 700-800 pF when the two electrode was Ag. And $\varepsilon$1, $\varepsilon$2 versus photon energy showed good film formation.

• 전기학회논문지
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• 제56권8호
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• pp.1471-1475
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• 2007

In this paper, a novel embedded ultra wideband (UWB) band-pass filter is presented on a FR-4 package substrate including high Dk resin coated copper (${\varepsilon}_r=30$) film. The proposed UWB filter is comprised of a parallel resonator with meander-type uniform impedance resonator (UIR) and two series resonators with high Q circular stacked spiral inductor and metal-insulator-metal (MIM) capacitor. In order to obtain excellent attenuation characteristics by generating attenuation poles in lower and upper stop bands, a single MIM capacitor is added to each resonator. The fabricated FR-4 embedded UWB filter has insertion loss of -1.0dB and return loss of -11dB, respectively. It has also extremely wide bandwidth (over 50%) and small size ($3.7{\times}4{\times}0.77\;mm^3$) which is compatible with LTCC devices.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제52권5호
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• pp.203-210
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• 2003

This paper describes high voltage and high energy density capacitor developed for pulsed power applications. The rated voltage of the developed capacitor is DC 22 [kV], the capacitance is 206 [$\mu$F] and the energy density is about 0.7 [kJ/kg]. Polypropylene film and kraft paper were used as the dielectrics. The ratio of the thickness of each dielectric material which consists of the composite dielectric structure, stacking factor and the termination method were determined by the charging and discharging tests on model capacitors. In terms of energy density, the developed capacitor has higher energy density compared with the products of foreign leading companies. In addition, it has been proved that the life expectancy can be more over 2000 shots through the charging and discharging test. The voltage reversal factor was 20%. This capacitor can be used as numerous discharge applications such as military, medical, industrial fields.

• Journal of Power Electronics
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• 제18권4호
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• pp.1067-1074
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• 2018

This paper presents a control method for variable-speed motor drives that do not use a DC-link electrolytic capacitor. The proposed circuit consists of a power factor correction converter for boosting the DC-link voltage, an inverter for driving the motor, and a small DC-link film capacitor. By employing a small DC-link capacitor, the proposed circuit that is small, and a low cost and weight are achieved. However, because the DC-link voltage varies periodically, the control of the circuit is more difficult than that of the conventional method. Using the proposed control method, an inverter can be controlled reliably even when the capacitance of the DC-link capacitor is very small. Experiments are performed using a 1.5-kW inverter with a $20-{\mu}F$ DC-link capacitor, and the experimental results are analyzed thoroughly.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1506-1508
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• 2001

We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.