• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1267-1270
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• 2006

Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1297-1300
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• 2005

We propose a new pixel design for active matrix organic light emitting diode (AM-OLED) displays using hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs). The pixel circuit is composed of five TFTs and one capacitor, and employs only one additional control signal line. It is verified by SPICE simulation results that the proposed pixel compensates the threshold voltage shift of the a-Si:H TFTs and OLED.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.370-374
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• 2002

This paper describes the design and fabrication of distributed analog phase shifter circuit. The phase shifter consist of coplanar waveguide(CPW) lines that are periodically loaded with voltage tunable (Ba,Sr)TiO$_3$ thin film interdigital(IDT) capacitors deposited by the pulsed laser deposition(PLD) on (001) MgO single crystals. The phase velocity on these IDT loaded CPW lines is a function of applied bias voltage, thus resulting in analog phase shifting circuits. The measured differential phase shift is 48$^{\circ}$ and the insertion loss decreases from -5㏈ to -3㏈ with increasing bias voltage from 0 to 40 V at 100㎐.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2000.11a
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• pp.155-159
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• 2000

This paper describes the self healing characteristics of metalized polypropylene film(MPPF) under ac condition. PDs were generally observed at relatively low voltage, and the PDIVs were differently varied depending on the number of pre-self healing due to void defects. Several pre-self healing events took place at lower voltage than the critical breakdown voltage of PPF. Self healing mainly occurred at pin tips, wrinkle sides, and cross points of wrinkles. The applied voltage at self healing was increased with PPF thickness. The burn out area at self healing was also increased with the applied voltage and PPF thickness. The peak currents in a grounding conductor at self healing was also increased with the applied voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.198-199
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• 2005

Conformal mapping based models are given for interdigital capacitors on substrates with a thin superstrate and covering dielectric thin film. This model is useful for a wide range of dielectric constant and layer thickness. Interdigital capacitors with finger numbers n>3 are discussed.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.45-49
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• 2014

In this work, a phase shifter radio-frequency integrated chip (RFIC) using a simple all-pass network is presented. As a tuning element of the phase shifter RFIC, tunable capacitors with a multi-layer dielectric of a para-/ferro-/para-electrics using a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film were utilized. In order to evaluate and analyze the fabricated phase shifter RFIC, the same elements such as an inductor and capacitor integrated into it are also fabricated and tested. The designed phase shifter RFIC was fabricated on a quartz substrate in the size of $1.16{\times}1.21mm^2$. As the test results, the maximum phase difference of $350^{\circ}$ is obtained at 15 V and its tuning frequency bandwidth is 90 MHz from 2.72 to 2.81GHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.428-431
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• 2002

Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultrasmall size. The structure of MIM(Metal-Insulator-Metal) device is Cr-Au/ PBLG/ Al. the number of accumulated layers are 1, 3, 5, 7, 9. The I-V characteristic of the device is measured from 0[V] to 2[V] and the characteristic of current-time of the devices. We have investigated the capacitance because PBLG system have a accumulated layers the maximum value of measured current is increased as the number of accumulated layers are decreased. The capacitor properties of a thin film is better as the distance between electrodes is smaller. The results have shown the insulating materials and could control the conductivity by accumulated layers.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1274-1276
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• 1994

A study on $BaTiO_3$ ceramics have been shown that dielectric properties of $BaTiO_3$ ceramics strongly depend on the size and ferroelectric domain density of the constituting grain. According to rising substrate temperature from $25[^{\circ}C]$ to $600[^{\circ}C]$, the peak intensity and crystal plane in XRD are increased. In this study, $BaTiO_3$ thin film prepared by RF sputtering from room temperature to $600[^{\circ}C]$ of substrate temperature. Therefore, we tried to investigate the relation between the characteristics of ceramics structure and dielectric factor.