• 설비공학논문집
• /
• 제10권1호
• /
• pp.22-32
• /
• 1998

Separate type thermosyphon has larger critical heat flux than non-loop type thermosyphon, because the flooding phenomenon of vapor and liquid occurring in non-loop one does not occur. The experimental study has been carried out separate type thermosyphon with single tube. An investigation of heat transfer characteristics in separate type thermosyphon is performed experimentally. Heat transfer coefficients in an evaporator and condenser were measured experimentally. The effects of liquid filling ratio, height difference, cooling temperature and heat flux on the heat transfer coefficients were examined. As a result, the reasonable range of the liquid filling ratio and the dependence of heat transfer on vapor temperature and heat flux are obtained.

• Advances in concrete construction
• /
• 제3권2호
• /
• pp.103-111
• /
• 2015

The foam concrete was fabricated by adding the foaming agent which composite ordinary Portland cement with plant and animal protein into cement paste, and the electromagnetic wave absorption properties were studied for the first time as well. The studies showed that the electromagnetic waves can be absorbed by multiple reflections and scattering within the porous material. Thickness and filling ratio have a great influence on the electromagnetic wave absorbing properties in 2-18 GHz of the foam concrete, the greater the thickness, the better the performance of absorption; filling ratio was about 52 vol.%, the absorbing properties achieved the best.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2008년도 추계학술대회B
• /
• pp.2682-2687
• /
• 2008

Depressurized drainage systems have been used for more than 30 years and are becoming a common part of urban drainage infrastructures. The hydraulic principles governing the operation of the depressurized drainage systems were studied in this paper and particularly, focused on the analysis of unsteady characteristics of the two-phase flow. A definition of the filling ratio was outlined and types of flow pattern were classified according to the filling ratio. Experiments were conducted to investigate the main features of pressure fluctuation. All results were found to depend on the filling ratio of the upstream pipe flow as well as the upstream Froude number.

• 대한조선학회논문집
• /
• 제60권6호
• /
• pp.460-472
• /
• 2023

This study was conducted based on the case of an accident (excessive deformation) that occurred during the hydraulic test of a shipboard tank manufactured in accordance with the design regulations. Over-pressure phenomenon was noted as the main cause of accidents in the process of testing tanks without physical damage, which can be found in external factors such as cross-sectional difference between inlet pipe and air pipe and higher water filling rate than the recommended one. The main goal of this paper is to establish a safe water filling rate according to the range of sectional area ratio(SAR) reduced below the regulations for each test situation. The simulation was conducted in accordance with the hydraulic test procedure specified in the Ship Safety Act, and the main situation was divided into two types: filling the tank with water and increasing the water head to the test pressure. The structural safety evaluation of the pressure generated inside the tank and the effect on the structure during the test was reviewed according to the SAR range. Based on the results, guidelines for the optimal filling rate applicable according to SAR during the hydraulic test were presented for the shipboard tanks used in this study.

• 터널과지하공간
• /
• 제22권6호
• /
• pp.449-461
• /
• 2012

화력발전소에서 발생하는 석탄회를 지반침하의 방지를 위하여 갱내충전용으로 사용하고자 한다. 따라서 영동화력발전소에서 발생하는 석탄회를 이용하여 기본적인 물리적 특성 및 유동 특성을 파악하였으며, 한보탄광의 제1사갱을 대상으로 모형갱도를 제작하여 총 8회의 수압식 충전실험을 수행하였다. 석탄회의 비중은 2.34이고 입도분석결과 실트질 모래인 SM에 해당한다. Slump 시험 및 Flow 유동시험 결과 석탄회 70 wt,% 이하에서 액상형태로 나타나므로 모형충전실험에서는 석탄회 60 wt,%를 적용하였다. 모형충전시험결과 갱내수 유, 무에 상관없이 토출구를 사갱이나 수갱 바닥에 위치시키는 것이 충전효율을 향상시키는데 유리한 방법임을 확인하였다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2018년도 춘계학술대회 논문집
• /
• pp.140-140
• /
• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• 대한금속재료학회지
• /
• 제49권4호
• /
• pp.334-341
• /
• 2011

The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.

• Tribology and Lubricants
• /
• 제22권1호
• /
• pp.20-25
• /
• 2006

The stress behavior analysis of a-rings and packing for a LPG filling unit has been presented using a finite element analysis technique by non-linear MSC/MARC program. The sealing performance and endurance of a-rings and packing are affected by working conditions such as filling pressure, friction coefficient, compression ratio, and material properties. The elastomeric polymers of O-rings and packing are nitrile butadiene rubber (NBR) and polytetrafluoroethylene (PTFE), which are selected as proper materials of a-rings and packing based on the stress analysis results. The calculated FEM results showed that the proper material of O-ring is NBR as a secondary sealing component and the recommended material of packing is PTFE as a primary sealing unit during a LPG filling process.

• Korea-Australia Rheology Journal
• /
• 제20권2호
• /
• pp.79-88
• /
• 2008

In this study, we focus on the improvement of the filling efficiency in injection molding by application of ultrasonic vibration. While studies about the filling efficiency of typical filling processes in the injection molding have been widely performed, there have been only few studies about the filling efficiency of an ultrasonic process. The effect of the ultrasonic vibration is an important process condition, which influences the flow characteristics of polymer melt. This new condition even affects well-known injection conditions such as cavity pressure, injection temperature and mold temperature. For this study, we carried out a numerical analysis by appropriate modeling and analysis of the ultrasonic process in the filling process. To verify this numerical analysis, we compared the numerical results with the experimental data. Also, we analyzed the filling process in a thin cavity using this numerical analysis. To understand the flow characteristics of polymer melt in the ultrasonic process, we substituted real and complex vibration conditions with simplified and classified conditions according to the position of vibrating cavity surfaces and the phase difference between two opposing cavity surfaces. We also introduced MFR (melt flow ratio) as a new index to estimate the filling efficiency in the ultrasonic process.

• 마이크로전자및패키징학회지
• /
• 제21권4호
• /
• pp.91-96
• /
• 2014

TSV기술은 실리콘 칩에 관통 홀(through silicon via)을 형성하고, 비아 내부에 전도성 금속으로 채워 수직으로 쌓아 올려 칩의 집적도를 향상시키는 3차원 패키징 기술로서, 와이어 본딩(wire bonding)방식으로 접속하는 기존의 방식에 비해 배선의 거리를 크게 단축시킬 수 있다. 이를 통해 빠른 처리 속도, 낮은 소비전력, 높은 소자밀도를 얻을 수 있다. 본 연구에서는 웨이퍼 레벨에서의 TSV 충전 경향을 조사하기 위하여, 실리콘의 칩 레벨에서부터 4" 웨이퍼까지 전해 도금법을 이용하여 Cu를 충전하였다. Cu 충전을 위한 도금액은 CuSO4 5H2O, H2SO4 와 소량의 첨가제로 구성하였다. 양극은 Pt를 사용하였으며, 음극은 $0.5{\times}0.5 cm^2{\sim}5{\times}5cm^2$ 실리콘 칩과 4" 실리콘 wafer를 사용하였다. 실험 결과, $0.5{\times}0.5cm^2$ 실리콘 칩을 이용하여 양극과 음극과의 거리에 따라 충전률을 비교하여 전극간 거리가 4 cm일 때 충전률이 가장 양호하였다. $5{\times}5cm^2$ 실리콘 칩의 경우, 전류 공급위치로부터 0~0.5 cm 거리에 위치한 TSV의 경우 100%의 Cu충전률을 보였고, 4.5~5 cm 거리에 위치한 TSV의 경우 충전률이 약 95%로 비아의 입구 부분이 완전히 충전되지 않는 경향을 보였다. 전극에서 멀리 떨어져있는 TSV에서 Cu 충전률이 감소하였으며, 안정된 충전을 위하여 전류를 인가하는 시간을 2 hrs에서 2.5 hrs로 증가시켜 4" 웨이퍼에서 양호한 TSV 충전을 할 수 있었다.