• 제목/요약/키워드: Filling process

검색결과 898건 처리시간 0.029초

3D 웨이퍼 전자접합을 위한 관통 비아홀의 충전 기술 동향 (Technical Trend of TSV(Through Silicon Via) Filling for 3D Wafer Electric Packaging)

  • 고영기;고용호;방정환;이창우
    • Journal of Welding and Joining
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    • 제32권3호
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    • pp.19-26
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    • 2014
  • Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

A Study of High Viscosity Melt Front Advancement at the Filling Process of Injection-Compression Mold

  • Park, Gyun-Myoung;Kim, Chung-Kyun
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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    • pp.333-334
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    • 2002
  • Injection-compression molding parts are many cases with complicated boundary condition which is difficult to analysis of mold characteristics precisely. In this study, the effects of various process parameters such as multi-point gate location, initial charge volume, injection time and pressure have been investigated using finite element method to fomulate the melt front advancement during the mold filling process. A general governing equation for tracking the filling process during injection-compression molding is applied to volume of fluid method. To verify the results of present analysis, they are compared with those of the other paper. The results show a strong effect of processing conditions as a result of variations in the three-dimensional complex geometry model.

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사각재 인발 공정의 코너채움에 관한 연구 (A Study on the Corner Filling in the Drawing of the Rectangular Rod)

  • 김용철;김영식;김병민
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 1999년도 압출 및 인발 심포지엄
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    • pp.56-59
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    • 1999
  • In the present study, in order to investigate the effect of the corner filling in the drawing of the rectangular rod from a round bar, the drawing of the square rod from a round bar has been simulated by using rigid-plastic finite element method and artificial neural network has been introduced to reduce the number of simulation. The experimental investigation has been also implemented to verify the efficiency of the application of results of present and previous study. According to the results of present and pervious study, the combination of semi-die angle gives a great effect on the corner filling in case of the irregular shaped drawing process, but, in case of the regular shaped drawing process, the main process variable on the corner filling is reduction in area.

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컴퓨터 시뮬레이션을 이용한 반용융 단조공정의 금형설계 및 충전현상의 실험적 검토 (The Die Design for Semi-Solid Forging Process of Computer Simulation and Experimental Investigation of Filling Phenomenon)

  • 이동훈;강충길
    • 소성∙가공
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    • 제10권5호
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    • pp.373-382
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    • 2001
  • Die design by computer simulation has some advantages compared with the conventional method which has performed by designer's experiences and trials and errors. The die filling and solidification process of thixoforming process were simulated by MAGMAsoft/thixo module. Furthermore, the die design for thixoforming was performed with the various geometry shape. The effect of designed gate dimension on filling phenomenon was estimated by filling simulation. The calculated results was compared with experimental data. The free surface phenomenon obtained by experiment have good agreement with computer simulation results. The solidification effect much as prosity and shrinkage for designed semi-solid forging die had been predicted by computer simulation. The designed die for semi-solid forging had been applied to produce of the frame part which is used to airconditious system.

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Numerical Simulation of Fast Filling of a Hydrogen Tank

  • ;김희동
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2010년도 제35회 추계학술대회논문집
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    • pp.353-358
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    • 2010
  • High pressure gas is a widely used storage mode for hydrogen fuel. A typical hydrogen tank that is charged with hydrogen gas can function as a hydrogen supply source in a large number of applications. The filling process of a high-pressure hydrogen tank should be reasonably short. However, when the fill time is short, the maximum temperature in the tank increases. Therefore the process should be designed in such a way to avoid high temperatures in the tank because of safety reasons. The paper simulates the fast filling process of hydrogen tanks using Computational Fluid Dynamics method. The local temperature distribution in the tank is obtained. Results obtained are compared with available experimental data. Further work is going on to improve the accuracy of the calculations.

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고속가공에 의한 쾌속제작용 자동충진 공정개발 (Development of Automatic Filling Process for Rapid Manufacturing by High-speed Machining Process)

  • 신보성;양동열;최두선;이응숙;제태진;김기돈;이종현;황경현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2001년도 춘계학술대회 논문집
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    • pp.28-31
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    • 2001
  • Recently, in order to satisfy the consumer's demand the life cycle and the lead-time of a product is to be shortened. It is thus important to reduce the time and cost in manufacturing trial products. Several techniques have been developed and successfully commercialized in the market RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome this problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP process. HisRP is a combination process using high-speed machining technology with automatic filling. In filling process, Bi58-Sn alloy is chosen because of the properties of los-melting point, low coefficient of thermal expansion and enviromental friendship. Also the use of filling wire is of advantage in term of simple and flexible mechanism. Then the rapid manufacturing product, for example a skull, is machined for aluminum material by HisRP process with an automatic set-up device of 4-faces machining.

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플라스틱과 금속재료를 이용한 3 차원 박벽 제품의 쾌속 제작 (Rapid Manufacturing of 3D Thin-walled Products using Plastics and Metals)

  • 신보성;강보식;박재현;노치현
    • 한국정밀공학회지
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    • 제23권8호
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    • pp.195-202
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    • 2006
  • High-speed machining (HSM) with excellent quality and dimensional accuracy has been widely used to create 3D structures of metal and plastics. However, the high-speed machining process is not suitable for the rapid realization of 3D thin-walled product because it consumes considerably long time in fixturing process of a work piece. In this paper, an effective rapid manufacturing process is proposed to fabricate 3D thin-walled products directly using HSM, phase change filling and ultrasonic welding. The filling process is useful to hold the thin-walled product during the machining step. The ultrasonic welding process is introduced to make one piece product from two piece parts that are machined by HSM and filling process. The proposed rapid manufacturing (RM) process has been shown that the RM process enables to fabricate the 3D thin-walled products using ABS plastics and aluminum metals from 3D CAD data to functional parts.

구리 전해 도금을 이용한 실리콘 관통 비아 채움 공정 (Through-Silicon-Via Filling Process Using Cu Electrodeposition)

  • 김회철;김재정
    • Korean Chemical Engineering Research
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    • 제54권6호
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    • pp.723-733
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    • 2016
  • 반도체 배선 미세화에 의한 한계를 극복하기 위해 실리콘 관통 비아(through silicon via, TSV)를 사용한 소자의 3차원 적층에 대한 연구가 진행되고 있다. TSV 내부는 전해도금을 통해 구리로 채우며, 소자의 신뢰성을 확보하기 위해 결함 없는 TSV의 채움이 요구된다. TSV 입구와 벽면에서는 구리 전착을 억제하고, TSV 바닥에서 선택적으로 구리 전착을 유도하는 바닥 차오름을 통해 무결함 채움이 가능하다. 전해 도금액에 포함되는 유기 첨가제는 TSV 위치에 따라 국부적으로 구리 전착 속도를 결정하여 무결함 채움을 가능하게 한다. TSV의 채움 메커니즘은 첨가제의 거동에 기반하여 규명되므로 첨가제의 특성을 이해하는 연구가 선행되어야 한다. 본 총설에서는 첨가제의 작용기작을 바탕으로 하는 다양한 채움 메커니즘, TSV 채움 효율을 개선하기 위한 평탄제의 개발과 3-첨가제 시스템에서의 연구, 첨가제 작용기와 도금 방법의 수정을 통한 채움 특성의 향상에 관한 연구를 소개한다.

게이트 형상이 결정입 제어 소재의 미세조직에 미치는 영향 (The Effect of the Gate Shape on the Controlled Material the Microstructure of Grain Size)

  • 정용식;배정운;서판기;강충길
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2004년도 추계학술대회논문집
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    • pp.152-155
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    • 2004
  • In the semi-solid die casting process, the important thing is the flow behaviors of semi-solid material. The flow patterns of semi-solid material can make the defects during die filling. To control of the flow patterns, is very important and difficult. In this paper, the flow behaviors of the semi-solid A356 alloy material during die filling at various die gate shapes has been observed with the grain size controlled material. The effects of the gate shape on the die filling characteristics were investigated. The filling tests in each plunger strokes were experimented, also simulated on the semi-solid material die casting process by MAGMAsofi. According to the filling tests and computer simulation, the effect of the gate shape on liquid segregation had been investigated.

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Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns

  • Lee, Woojin;Kim, Tae Hyung;Choa, Yong-Ho
    • 한국재료학회지
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    • 제26권8호
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    • pp.427-429
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    • 2016
  • A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.