• 제목/요약/키워드: Fill density

검색결과 240건 처리시간 0.023초

에탄올 발효방법에 따른 음식물류 폐기물의 바이오에탄올 생산성 비교 (Comparison of Bio-ethanol Productivity Using Food Wastes by Various Culture Modes)

  • 강희정;리홍선;김용진;김성준
    • KSBB Journal
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    • 제25권5호
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    • pp.471-477
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    • 2010
  • In order to improve bio-ethanol productivity by various cultivation methods in this paper, the culture modes using food wastes, such as batch culture, high-cell-density fermentation, SSF (simultaneous saccharification and fermentation) by fill & draw, continuous culture by fill & draw were performed and their productivities were compared. SSFs by fill & draw were performed by continuous decompression using 1 L evaporator system, and by 10 L bioreactor without decompression. In addition, the continuous cultures by fill & draw mode using SFW (saccharafied food wastes) medium were performed by changes of 40% culture broth with intervals of 12 h (0.03 $h^{-1}$), 6 h (0.07 $h^{-1}$), 3 h (0.13 $h^{-1}$). Consequently, productivities of bio-ethanol were 2.52 g/L-h and 1.30 g/L-h in batch culture and high- cell-density fermentation, respectively. The productivities of SSF by fill & draw showed 2.24 g/L-h and 2.03 g/L-h in continuous decompression with 1 L evaporator and 10 L bioreactor without decompression, respectively. Also, the productivities in continuous culture by fill & draw modes showed 2.02 g/L-h, 4.07 g/L-h and 6.25 g/L-h by medium change with intervals of 12 h, 6 h, and 3 h, respectively. In conclusion, the highest ethanol productivity was obtained in the continuous culture mode by fill & draw with dilution rate of 0.13 $h^{-1}$.

Mechanism Study of Flowable Oxide Process for Sur-100nm Shallow Trench Isolation

  • Kim, Dae-Kyoung;Jang, Hae-Gyu;Lee, Hun;In, Ki-Chul;Choi, Doo-Hwan;Chae, Hee-Yeop
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.68-68
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    • 2011
  • As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

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Failure Analysis for High via Resistance by HDP CVD System for IMD Layer

  • Kim, Sang-Yong;Chung, Hun-Sang;Seo, Yong-Jin
    • Transactions on Electrical and Electronic Materials
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    • 제3권4호
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    • pp.1-4
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    • 2002
  • As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

Fill Dam의 기계 전압효과에 관한 연구 (A Study on the Mechanical Compaction of Fill Dam)

  • 윤충섭;김주범
    • 한국농공학회지
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    • 제21권3호
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    • pp.92-103
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    • 1979
  • The compaction of core zone of the fill dam is very important foe increasing of the Strength of soil mass and reduction of permeability of the core. The principal objects of this study are to give the construction criteria of tamping rollers and to find out the relationships between density and permeability of soil after compaction. The results in this study are summarized as follows. 1. The core zone of fill dam should be compacted more than 8 passed because the compaction effects of clayey soil increase sharply in about 8 passes of roller. 2. The coefficient of permeability (K) increases with the thickness of compaction of soil even though the density is same. 3. The effect of compaction increases with the quantity of coarse materials such as coarse sand and gravel. 4. If D values change from 100 percent to 98 percent and from 100 percent to 95 percent, K values become 2 times and 5 times of initial K value respectively. 5. The coefficient of permeability in the field soil is very high comparing with the result of laboratory test at the same 100 percent compaction ratio, but differences between both results decrease with the decrease of compaction ratio. 6. Thickness of soil layer for the compaction should be increased for heavier compaction machine. 7. In order to get the compaction ratio of 98 percent or more, 10 to 12 passes of roller is generally required with the thickness of soil from 20cm to 30cm.

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고유동성 채움재 타설장비를 이용한 모형시험 (A Small Scale Test using the Coal Ash Placement Equipment)

  • 김주형;조삼덕;함태규;도종남;천병식
    • 한국지반공학회:학술대회논문집
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    • 한국지반공학회 2010년도 춘계 학술발표회
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    • pp.1452-1457
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    • 2010
  • 본 연구에서는 국내 회처리장에 매립되어 있는 매립회를 효율적으로 사용하기 위한 실내 모형시험장치인 CSP 시스템을 제작하여 매립회와 물 그리고 시멘트량을 조절하여 모형지반을 조성하고 이에 대한 강성변화를 평가하였다. 시멘트를 첨가한 모형지반이 시멘트를 첨가하지 않은 경우에 비해 빠른 속도로 경화가 진행되었으며 192시간 경과 후에는 경화속도가 급격히 감소하는 것으로 나타났다. 모형지반 조성시 전체 중량의 30~45% 사이의 물의 양 변화는 지반의 강성 변화에 큰 영향을 끼치지는 않는 것으로 나타났다. 추후에는 지반 조성 초기에 큰 지반강성의 크기를 얻을 수 있도록 시멘트량을 증가시키는 등의 다양한 영향인자에 대한 시험을 수행하여 고유동성 채움재 활용성을 정량적으로 평가하는 것이 필요할 것으로 판단된다.

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Numerical Simulation of Die Compaction: Case Studies and Guidelines

  • Coube, Olivier
    • 한국분말야금학회:학술대회논문집
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    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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    • pp.185-186
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    • 2006
  • Numerical Simulation of powder die pressing is conducted on Case Study geometry. Influence of fill density distribution and punch kinematics upon green density distribution and punch loading are studied and discussed. Deviations in punch kinematics due to punch deflection influence the most the results in term of density and force.

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PIT법에서 분말 충진밀도가 Bi-2223/Ag 선재에 미치는 효과 (The effects of the powder packing density on the Bi-2223/Ag tape in PIT(powder-in-tube) method)

  • 김성환;유재무;고재웅;박성창;박명제;정형식;김철진
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2002년도 학술대회 논문집
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    • pp.101-104
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    • 2002
  • The influences of the powder packing density on the Bi-2223/Ag tape have been investigated. For packing powder, both method of uniaxial press and packed rod form made by cold isostatic press(CIP) have been applied. As the pressure of cold isostatic press(CIP) is increased, fill factor and critical current (Ic) of Bi-2223/Ag tape is increased. At a pressure of 2000kgf/cm$^2$, fill factor reach ∼3l% and this sample has the engineering current density(Je) value of ∼8.5kA/cm$^2$(Ic ∼77A, Jc ∼ 30kA/cm$^2$). The tape sample packed by uniaxial press method shows more sawsaging effect than the sample processed by cold isostatic press(CIP), resulting from inhomogity of powder distribution produced by the process of uniaxial press.

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비정질 실리콘 태양전지의 Fill Factor에 관한 연구 (A Study on Fill Factor of Amorphous Silicon Solar Cell)

  • 이준호;한민구;이정한
    • 태양에너지
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    • 제7권1호
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    • pp.35-41
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    • 1987
  • This paper presents a comprehensive computer simulation of hydrogenated amorphous p-i-n silicon solar cells. The physical mechanism governing solar cell operation has been modeled and solved numerically by Runge-Kutta-Gill method. Effects of gap state density, dopant impurity, diffusion length and interface recombination velocity on solar cell performance are investigated. Numerical results show that the electric field in i-region is not uniform but depends strongly on voltage and position. A rather poor fill factor may be due to the electric field variation and short diffusion length. It is found out that the life time should be improved in order to increase a fill factor and a conversion efficiency.

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슬롯의 점적률을 고려한 교류발전기의 출력밀도 개선 (Implement of Power Density for AC Generator Using a Fill Factor of Slot)

  • 이재원;김영길
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2017년도 춘계학술대회
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    • pp.275-278
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    • 2017
  • 차량의 교류발전기는 성능 및 효율에 따라 자동차의 연비와 배기가스에 많은 영향을 준다. 효율을 개선시키고 연비를 향상시키려는 노력은 자동차업체및 업체를 중심으로 계속되고 있다. 본논문은 A교류 발전기의 설계절차를 정리하고 같은 크기의 교류발전기에서 출력을 최적화하는 인자를 발굴하여 실차의 조건에서 충방전 Simulation을 통해 Energy Balance를 검증하였다.

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차세대 메모리 디바이스Gap-Fill 공정 위한 공간 분할 PE-ALD개발 및 공정 설계 (Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices)

  • 이백주;황재순;서동원;최재욱
    • 한국표면공학회지
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    • 제53권3호
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    • pp.124-129
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    • 2020
  • This study is for the development of high temperature ALD SiO2 film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N2and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.