• KSBB Journal
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• v.25 no.5
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• pp.471-477
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• 2010

In order to improve bio-ethanol productivity by various cultivation methods in this paper, the culture modes using food wastes, such as batch culture, high-cell-density fermentation, SSF (simultaneous saccharification and fermentation) by fill & draw, continuous culture by fill & draw were performed and their productivities were compared. SSFs by fill & draw were performed by continuous decompression using 1 L evaporator system, and by 10 L bioreactor without decompression. In addition, the continuous cultures by fill & draw mode using SFW (saccharafied food wastes) medium were performed by changes of 40% culture broth with intervals of 12 h (0.03 $h^{-1}$), 6 h (0.07 $h^{-1}$), 3 h (0.13 $h^{-1}$). Consequently, productivities of bio-ethanol were 2.52 g/L-h and 1.30 g/L-h in batch culture and high- cell-density fermentation, respectively. The productivities of SSF by fill & draw showed 2.24 g/L-h and 2.03 g/L-h in continuous decompression with 1 L evaporator and 10 L bioreactor without decompression, respectively. Also, the productivities in continuous culture by fill & draw modes showed 2.02 g/L-h, 4.07 g/L-h and 6.25 g/L-h by medium change with intervals of 12 h, 6 h, and 3 h, respectively. In conclusion, the highest ethanol productivity was obtained in the continuous culture mode by fill & draw with dilution rate of 0.13 $h^{-1}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.68-68
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• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.1-4
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• 2002

As the application of semiconductor chips into electronics increases, it requires more complete integration, which results in higher performance. And it needs minimization in device design for cost saving of manufacture. Therefore oxide gap fill has become one of the major issues in sub-micron devices. Currently HDP (High-Density Plasma) CVD system is widely used in IMD (Inter Metal Dielectric) to fill narrower space between metal lines. However, HDP-CVD system has some potential problems such as plasma charging damage, metal damage and etc. Therefore, we will introduce about one of via resistance failure by metal damage and a preventive method in this paper.

• Magazine of the Korean Society of Agricultural Engineers
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• v.21 no.3
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• pp.92-103
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• 1979

The compaction of core zone of the fill dam is very important foe increasing of the Strength of soil mass and reduction of permeability of the core. The principal objects of this study are to give the construction criteria of tamping rollers and to find out the relationships between density and permeability of soil after compaction. The results in this study are summarized as follows. 1. The core zone of fill dam should be compacted more than 8 passed because the compaction effects of clayey soil increase sharply in about 8 passes of roller. 2. The coefficient of permeability (K) increases with the thickness of compaction of soil even though the density is same. 3. The effect of compaction increases with the quantity of coarse materials such as coarse sand and gravel. 4. If D values change from 100 percent to 98 percent and from 100 percent to 95 percent, K values become 2 times and 5 times of initial K value respectively. 5. The coefficient of permeability in the field soil is very high comparing with the result of laboratory test at the same 100 percent compaction ratio, but differences between both results decrease with the decrease of compaction ratio. 6. Thickness of soil layer for the compaction should be increased for heavier compaction machine. 7. In order to get the compaction ratio of 98 percent or more, 10 to 12 passes of roller is generally required with the thickness of soil from 20cm to 30cm.

• Proceedings of the Korean Geotechical Society Conference
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• 2010.03a
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• pp.1452-1457
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• 2010

Recently, coal ash is used as resources to make controlled low-strength material (CLSM) which a self-compacted, cementitious material used primarily as a backfill in lieu of compacted fill. Pozzolanic reaction is strongly related with self-cementation of coal ashes. However, this reaction depends on pozzolanic content in fill materials and is disappeared in 2-3 days after placement of coal ash fill. Therefore, state of coal ash fill is commonly very loose and not appropriate for foundations of structures without special treatments. In this study, a coal ash placement device was developed to place coal ashes effectively to improve density of coal ash fills. The device consists of a ribbon type mixer to obtain homogeneous materials mixture and a piston type pump for density control of fill materials. Based on several laboratory test results, more stable coal ash fill state can be obtained with controlling placement pressure.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.185-186
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• 2006

Numerical Simulation of powder die pressing is conducted on Case Study geometry. Influence of fill density distribution and punch kinematics upon green density distribution and punch loading are studied and discussed. Deviations in punch kinematics due to punch deflection influence the most the results in term of density and force.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.101-104
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• 2002

The influences of the powder packing density on the Bi-2223/Ag tape have been investigated. For packing powder, both method of uniaxial press and packed rod form made by cold isostatic press(CIP) have been applied. As the pressure of cold isostatic press(CIP) is increased, fill factor and critical current (Ic) of Bi-2223/Ag tape is increased. At a pressure of 2000kgf/cm$^2$, fill factor reach ∼3l% and this sample has the engineering current density(Je) value of ∼8.5kA/cm$^2$(Ic ∼77A, Jc ∼ 30kA/cm$^2$). The tape sample packed by uniaxial press method shows more sawsaging effect than the sample processed by cold isostatic press(CIP), resulting from inhomogity of powder distribution produced by the process of uniaxial press.

• Solar Energy
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• v.7 no.1
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• pp.35-41
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• 1987

This paper presents a comprehensive computer simulation of hydrogenated amorphous p-i-n silicon solar cells. The physical mechanism governing solar cell operation has been modeled and solved numerically by Runge-Kutta-Gill method. Effects of gap state density, dopant impurity, diffusion length and interface recombination velocity on solar cell performance are investigated. Numerical results show that the electric field in i-region is not uniform but depends strongly on voltage and position. A rather poor fill factor may be due to the electric field variation and short diffusion length. It is found out that the life time should be improved in order to increase a fill factor and a conversion efficiency.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.275-278
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• 2017

The automotive society is facing many challenges in minimizing the energy loss to improve performance and fuel economy of the vehicle. This work "Implement of Power Density for AC Generator Using a Fill Factor of Slot" is a research in Electrical Generator design, to improve power density of Alternator used in conventional IC engine powered vehicles. The power density of the alternator directly influences the fuel economy and performance in the motor vehicle. The size and weight of the alternator can be reduced by suitably designing power density of alternator. The simulation model of alternator is made and tested for different stator space factor using solid and round conductor to demonstrate the improvement in the output performance and efficiency. The result shows that there is an average 10% improvement in efficiency of alternator by using the solid conductor. The energy balance of the system also increased SOC in the base model.

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.124-129
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• 2020

This study is for the development of high temperature ALD SiO₂ film process, optimized for gap-fill process in manufacturing memory products, using a space-divided PE-ALD system equipped with an independent control dual plasma system and orbital moving unit. Space divided PE-ALD System has high productivity, and various applications can be applied according to Top Lid Design. But space divided ALD system has a limitation to realize concentric deposition map due to process influence due to disk rotation. In order to solve this problem, we developed an orbit rotation moving unit in which disk and wafer. Also we used Independent dual plasma system to enhance thin film properties. Improve productivity and film density for gap-fill process by having deposition and surface treatment in one cycle. Optimize deposition process for gap-fill patterns with different depths by utilizing our independently controlled dual plasma system to insert N₂and/or He plasma during surface treatment, Provide void-free gap-fill process for high aspect ratio gap-fill patterns (up to 50:1) with convex curvature by adjusting deposition and surface treatment recipe in a cycle.