• Korean Security Journal
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• no.1
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• pp.283-319
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• 1997

Our society witnesses the rapid progress in the areas of politics, economy, society and culture in the process of national modernization since 1960s, which in turn as a reverse function gets to contract a societic pathology, totally lowering the security level of citizens' lives owing to various violent crimes like hostage commotions and murders with rifles and deadly weapons. what is the main reason for that? That may be partly because the chief police force concentrates on the current situation resulting in the vacuum of the public peace. However, the main reason is that the police fall short of man-power and equipments even if the whole police power were put to use in preventing and quelling the crimes. That is true not only of Korea but also of the advanced countries like the U.S.A., England and Japan. We realize that these advanced countries have higher level of security in every individual's life and property than Korea because their progress of the private guard systems can fill in a vacuum of the shortage of the police power, Therefore, we should without delay internationalize our private guard systems expecting the widely opening of the guard service markets in the age of Uruguay Round. To do this, we need to change our ideas for fostering the policy of the private guard from passive defense ideas into positive aggressive ones. Our police should urgently set up a plan to pursue the orientation of vision that we should dispatch our private guards overseas before foreign guards rush into our markets. Accordingly it goes without saying that the private guard group should distinguish their services from the public services initiating their own theory and strategy of private guard services and also readjust themselves between the public duties and the private services with the study of minimizing the reverse function of the private guard systems. The history criminal justice has always shown that the criminal system progressed at the initiative of the civil factor in case its demand and supply do not make both ends meet. Nevertheless, in the process the power of the government never weakens, rather it is built up in general. In conclusion, the necessity of the build-up of the private guard services must duly be acknowledged by the police as well as by the business which has its unique sphere within the criminal justice instead of as the suplemtary services of the simple the police power on the long-term basis. The purpose of the private guard services can be largely classified into the two categories; first it means the function to prevent the crimes against the citizens and secondly to enhance the national interest as an increasing mammoth business with a worldly competition capacity. The police has an absolute responsibility that they should protect the modem public in general from feeling the crisis of the personal threat, tension, anxiety and nervousness. In short, if we develop the complete private guard system to guarantee the societic atmosphere for all citizens, keep the public peace, and protect all citizens' lives and properties, we will sure enjoy a beautiful land, a wholesome society and a happy life in goodharmony of law and order.

• Journal of Radiation Protection and Research
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• v.20 no.4
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• pp.265-274
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• 1995

Diffusivity of ions of radioactive species is an important factor for designing radwaste repositories. Clay minerals are used as a backfill material. In this study, diffusion of Co-60 ions through the bentonite having various densities has been studied, using a diffusion cell. The measured diffusivities of Co-60 ions decreased as the density of bentonite increased. The diffusivity of Co-60 ion decreased from $8.79{\times}10^{11}m^2/s$ to $6.82{\times}10-13m^2/s$ as the clay dry bulk density increased from 0.41 to 2.03g/cm3. The diffusivity of Co ion was larger than that of Sr ion at low density, but the diffusivity of Co ion decreased rapidly as the density of clay increased and became smaller than that of Cs ion at high density. This phenomenon is thought to be caused by the rapid decrease of the fraction of mobile cation since the chemical combination of Co ions with oxygen or oxide on clay surface and the entrance of Co ions into the crystal structure of clay increase as the clay density increases. This change should be considered especially in designing the clay back fill for low and intermediate radwaste disposal facilities.

• Asian-Australasian Journal of Animal Sciences
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• v.15 no.12
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• pp.1738-1746
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• 2002

Research was carried out to ascertain whether or not the volume of saliva flowing into the rumen regulates dry forage intake in ruminants. Goats with a parotid fistula were fed roughly crushed alfalfa hay cubes, concentrated beef cattle feed and $NaHCO_3$ wice daily (10:00-12:00, 16:00-18:00). Except for the days on which experiments were conducted, the animals were free access to drinking water. The animals were intraruminally infused every day prior to the morning feeding period with parotid saliva collected from the parotid fistula over a 24 h period. The present experiment consisted of three treatments, non-infusion (NI), intraruminal infusion of parotid saliva (RSI), and intraruminal infusion of warm water (RWI). In the RSI treatment, approximately 4-5 kg of parotid saliva (280-290 mOsm/l) collected over a 24 h period was intraruminally infused 1 h prior to the commencement of morning feeding. In the RWI treatment, parotid saliva was substituted for warm water ($36^{\circ}C$). After infusions, the animals were fed on roughly crushed alfalfa hay cubes for 2 h. During feeding, eating and saliva secretion rates were measured. Blood samples were also periodically collected from the jugular vein. After 2 h feeding, water intake was measured for 30 min. These measurements were used to define thirst levels. On the day of the experiment, the animals were not access to drinking water during the morning feeding. It is thought that rumen fill in RSI and RWI treatments was higher than the NI treatment. In comparison with the NI treatment however, cumulative feed intake increased by 39.3% with RSI treatment and by 45.9% with RWI treatment after completion of the 2 h feeding period. After 2 h feeding, thirst level in the RSI treatment showed only a 10% decrease compared to the NI treatment, but thirst level in the RWI treatment decreased 49.8%. Despite the significant differences in thirst levels between RSI and RWI treatments, the cumulative feed intake in both treatments was similar. When comparing accumulated saliva secretion volumes 2 h after feeding, volumes in the RSI treatment were significantly 35.9% lower than the NI treatment while volumes in the RWI treatment were unchanged. However, the volumes of saliva and fluid flowing into the rumen were greater in both RSI and RWI treatments when compared to the NI treatment. The results indicate that the amount of saliva flowing into the rumen is a factor regulating feed intake in ruminants fed on dry forage.

• Korean Journal of Materials Research
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• v.30 no.10
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• Korean Journal of Remote Sensing
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• v.31 no.2
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• pp.85-99
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• 2015

TDI CCD sensors are being used for most of the electro-optical camera mounted on the low earth orbit satellite to meet high performance requirements such as SNR and MTF. However, the CMOS sensors which have a lot of implementation advantages over the CCD, are being upgraded to have the TDI function. A few methods for improving the issue of motion blur which is apparent in the CMOS sensor than the CCD sensor, are being introduced. Each pixel can be divided into a few sub-pixels to be read more than once as is the same case with three or four phased CCDs. The fill factor can be reduced intentionally or even a kind of mask can also be implemented at the edge of pixels to reduce the blur. The motion blur can also be reduced in the TDI CMOS sensor by reducing the integration time from the full line scan time. Because the integration time can be controlled easily by the versatile control electronics, one of two performance parameters, MTF and SNR, can be concentrated dynamically depending on the aim of target imaging. MATLAB simulation has been performed and the results are presented in this paper. The goal of the simulation is to compare dynamic MTFs affected by the different methods for reducing the motion blur in the TDI CMOS sensor.

• Journal of the Korean Society for Nondestructive Testing
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• v.30 no.4
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• pp.386-395
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• 2010

The steam generator management program(SGMP) has recently defined the procedures for the qualification of eddy current hardware and technique. These procedures provide two basic methods for qualification. The first way is to qualify the equipment or the probe by using the flaw mechanism and method of the pulled tubes from the heat exchangers or the artificial flawed tubes. The second way is to verify the equivalency with the characteristics of the qualified equipment or probe. In this case, the qualified equipment or probe may be modified to substitute or replace instruments or probes without re-qualification provided that the range of essential variables defined in the examination technique specification sheet are met. This study is to describe the result of the comparative performance evaluation of bobbin coil eddy current probes manufactured by KEPCO Research Institute and probes manufactured by a foreign manufacturer. As a result of this study, although there were minor differences between the two kinds of probes, it was evaluated that the two kinds of probes were almost identical in the significant performance characteristics described in the KEPCO Research Institute guideline.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.37-44
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• 2013

In order to investigate an influence of carrier trap by quantum dots (QDs) on the solar parameters, in this study, the $p^+-QD-n/n^+$ solar cells with InAs/GaAs QD active layers are fabricated, and their characteristics are investigated and compared with those of a GaAs matrix solar cell (MSC). Two different types of QD structures, the Stranski-Krastanow (SK) QD and the quasi-monolayer (QML) QD, have been introduced for the QD solar cells, and the parameters (open-circuit voltage ($V_{OC}$), short-cirucuit current ($I_{SC}$), fill factor (FF), conversion efficiency (CE)) are determined from the current-voltage characteristic curves under a standard solar illumination (AM1.5). In SK-QSC, while FF of 80.0% is similar to that of MSC (80.3%), $V_{OC}$ and $J_{SC}$ are reduced by 0.03 V and $2.6mA/cm^2$, respectively. CE is lowered by 2.6% as results of reduced $V_{OC}$ and $J_{SC}$, which is due to a carrier trap into QDs. Though another alternative structure of QML-QD to be expected to relieve the carrier trap have been firstly tried for QSC in this study, it shows negative results contrary to our expectations.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.210-210
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• 2012

Ge 기판을 이용한 GaInP/GaAs/Ge 삼중접합 태양전지는 43.5%의 높은 광전효율을 기록하고 있으며, 이를 지상용 태양광 발전시스템에 이용하려는 연구가 진행 중이다[1]. 그러나, 이러한 다중접합 태양전지는 셀 제작 비용에 있어 Ge기판의 가격이 차지하는 비중이 높고 대면적 기판을 이용하기 힘든 단점이 있다. 한편, 무게, 기계적 강도와 열전도도 측면에서 Si 기판은 Ge 기판에 비해 장점이 있다. 아울러, 상대적으로 낮은 가격의 대면적 기판을 사용할 수 있기 때문에 Si 기판으로 Ge 기판을 대체할 경우 다중접합 태양전지의 높은 제작 비용을 낮추는 효과도 기대할 수 있다. Si 기판의 장점을 취하며 고효율 태양전지를 제작하기 위해, 이번 실험에서 우리는 Ge 에피층이 성장된 Si 기판 위에 GaAs 태양전지를 제작하였다. GaAs, GaInP와 비슷한 격자상수를 갖고 있는 Ge과 달리, Si은 이들 물질(GaAs, GaInP)과 4%의 격자상수 차이를 갖고 있으며 이로 인해 성장과정에서 관통전위가 발생하게 된다. 이러한 관통전위는 소자의 개방전압을 감소시키는 원인으로 작용한다. 실제로 Si 기판 위에 제작된 GaAs/Ge 이중접합 태양전지에서 관통전위 밀도에 따른 개방전압 감소를 확인할 수 있었다. 관통전위로 인한 영향 이외에, Si 기판위에 제작된 태양전지에서는Ge 기판 위에 제작된 태양전지에 비하여 낮은 fill factor가 관찰되었다. 이것은 Si 기판 위에 제작된 GaAs/Ge 이중접합 태양전지가 높은 직렬저항을 가지고 있기 때문이다. 따라서 이번 실험에서는 Si 기판 위에 제작한 GeAs/Ge 이중접합 태양전지의 직렬저항의 원인을 전산모사와 실험을 통하여 규명하였다. TCAD (APSYS-2010)를 이용한 전산모사 결과, Si 기판의 낮은 불순물 농도 ($1{\times}10^{15}/cm^3$)에 따른 직렬저항의 원인으로 파악되었으며, 전류-전압 특성을 측정하여 실험적으로 이를 확인하였다. 이러한 직렬저항 성분을 줄이기 위하여 Si 기판의 p형 불순물 농도가 전류 전압 특성 곡선에 미치는 영향을 전산모사를 통하여 알아보았으며, Si 기판의 불순물 농도가 $1{\times}10^{17}/cm^3$ 이상으로 증가할 경우, 직렬저항 성분이 크게 감소 하는 것을 전산모사 결과로 예상할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.591-591
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• 2012

본 연구는 Transparent conducting oxide (TCO, 산화물투명전극)를 이용한 박막태양전지 효율향상에 관한 것으로, 이중의 TCO층(Double-stacked TCO layer)의 효과적인 광학 및 전기적 설계에 관한 것이다. 기존 박막 태양전지에서는 투명전극 TCO layer로서, ITO (Indium-Tin-Oxide), FTO (Fluorine- Tin-Oxide), 및 AZO(Aluminum-doped Zinc Oxide) 등을 사용해 왔다. 각 TCO layer마다 장점이 있지만 단점 또한 존재한다. ITO의 경우 높은 전기적 특성을 가지는 반면 수소 플라즈마에 취약하고 기계적 강도에 취약해 ITO 단일층만으로 박막 태양전지에 적용하는 것에 제한을 받는다. 한편, AZO의 경우 전기적 특성도 우수할 뿐만 아니라 수소 플라즈마에도 내구성이 강한 장점이 있지만, 일함수가 p형 반도체보다 낮아 Schottky junction이 되어, 높은 전위장벽이 형성된다. 이는 정공의 이동을 방해하고, 정공의 축적이 일어나서 순방향 전압을 인가할 때 많은 전류의 감소를 가져온다. 또한, AZO와 p형 반도체 사이의 높은 직렬저항으로 인해 광전압(Voc, Open circuit voltage)와 충실률 (FF, Fill factor)가 떨어진다는 단점이 있다. 본 실험에서는 ITO/AZO 2중구조의 TCO층을 적용하여 상기의 문제점을 해결하고자 한다. 이중 구조 TCO층은 Magnetron sputter system을 이용하여, 단계적으로 증착되었다. 빛이 입사하는 유리에 ITO를 제1전도층으로 증착하였는데, ITO는 입사광의 투과도와 전기전도성이 우수하다. 제2전도층으로는 AZO층을 이용하였으며, 실리콘 반도체층과 접하게 된다. AZO는 실리콘 증착시 발생하는 수소 플라즈마에 안정적이고, 물리적 강도 또한 우수한 장점이 있다. 이중 구조층위에 실리콘 광흡수층(Si absorber)을 증착하였으며, pin 구조를 가진다. 기존, 단일막 TCO층과 2중구조 TCO층을 이용하여, 실리콘 박막 태양전지를 구성하였다. 이때, ITO/AZO의 2중구조를 적용하였을 때 태양 전지 특성이 크게 향상된 결과를 얻을 수가 있었다. 특히, 전류밀도의 경우 ITO, FTO, AZO 각각 14.5 mA/cm2, 11.2 mA/cm2, 8.18 mA/cm2를 나타낸 반면 ITO/AZO 2중구조의 경우 약 17mA/cm2 로 크게 향상 되었고, 태양전지 변환 효율도 각각 7.5%, 6.9%, 4%에서 ITO/AZO 2중 구조의 경우 8.05%로 크게 향상되었다. 본 발표에서는 2중구조 TCO를 이용한 현공정에 적용 가능한 박막태양전지 효율향상 기법에 대해 논의하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.