• 제목/요약/키워드: Figure Of Merit

검색결과 436건 처리시간 0.031초

Improvement of the Figure of Merit in Pb[(Mg1/3Ta2/3)0.7Ti0.3]O3 Systems

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • 제25권5호
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    • pp.88-91
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    • 2016
  • The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

분말 제조공정에 따른 n형 PbTe 가압소결체의 열전특성 (Thermoelectric Properties of the Hot-Pressed n-Type PbTe with the Powder Processing Method)

  • 최재식;오태성;현도빈
    • 한국재료학회지
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    • 제8권3호
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    • pp.245-251
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    • 1998
  • Bi를 첨가한 n형 PbTe 가압소결체를 기계적 합금화 공정으로 제조하여, 소결 특성과 열전특성을 분석하고 이를 용해/분쇄법으로 제조한 PbTe가압소결체와 비교하였다. 기계적 합금화 공정으로 제조한 PbTe가압소결체에는 용해/분쇄법으로 제조한 시편에 비해 Seebeck계수가 음의 값으로 증가하였으며, 전기비저항이 증가하고 열전도도가 감소하였다. 또한 기계적 합금화 공정으로 제조한 PbTe에서 최대성능지수가 증가하였으며, \ulcorner대성능지수를 나타내는 온도가 저온으로 이동하였다. 0.3wt% Bi를 첨가한 PbTe를 $650^{\circ}C$에서 가압소결시 기계적 합금화 공정으로 제조한 시편은 $200^{\circ}C$에서 $1.33\times10^{-3}/K$의 최대성능지수를 나타내었으며, 용해/분쇄법으로 제조한 시편은 $400^{\circ}C$에서 $1.07\times10^{-3}/K$의 최대성능지수를 나타내었다.

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65 nm CMOS 기술을 적용한 20 GHz 이하의 1 단 저잡음 증폭기 설계 (Design Optimization of a One-Stage Low Noise Amplifier below 20 GHz in 65 nm CMOS Technology)

  • 센예호;이재홍;신형철
    • 대한전자공학회논문지SD
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    • 제46권6호
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    • pp.48-51
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    • 2009
  • 20 GHz 이하의 주파수 범위에서 저잡음 증폭기의 성능지수를 최대화하기 위해 65 nm RF CMOS 기술을 이용하여 제작된 입력 트랜지스터의 바이어스 전압과 폭을 최적화하였다. 만일 13 GHz 보다 동작 주파수가 높을 경우, 보다 높은 이득을 확보하기 위해 2단 증폭기의 적용이 필요하였다. 또한 5 GHz 보다 낮을 경우, 제한된 범위 내에서의 전력소모를 제어하기 위해, 입력 트랜지스터의 게이트와 소스사이의 추가적인 커패시터를 삽입하였다. 본 논문은 20 GHz 이하에서 동작하는 1단 LNA의 전반적인 성능을 검토하였고, 본 접근법은 다른 CMOS LNA 설계 기술에 적용가능하다.

Development of MATLAB-based Signal Performance Analysis Software for New RNSS Signal Design

  • Han, Kahee;Won, Jong-Hoon
    • Journal of Positioning, Navigation, and Timing
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    • 제8권4호
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    • pp.139-152
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    • 2019
  • The design of new navigation signals is a key factor in building new satellite navigation systems and/or modernizing existing legacy systems. Navigation signal design involves selecting candidate groups and evaluating and analyzing their signal performances. This process can be easily performed through software simulation especially at the beginning of the development phase. The analytical signal performance analysis software introduced in this study is implemented based on equations between the signal design parameters of Radio Navigation Satellite Service (RNSS) and the navigation signal figures-of-merit (FoMs). Therefore, this study briefly summarizes the RNSS signal design parameters and FoMs before introducing the developed software. After that, we explain the operating sequence of the implemented software including the Graphical User Interface (GUI), and calculate the FoMs of an example scenario to verify the feasibility of the software operations.

ZnO/Ti/ZnO 박막의 결정성 및 전기광학적 완성도 개선 연구 (Enhancements of Crystallization and Opto-Electrical performance of ZnO/Ti/ZnO Thin Films)

  • 장진규;김유성;이연학;최진영;이인식;김대욱;차병철;공영민;김대일
    • 한국표면공학회지
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    • 제56권2호
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    • pp.147-151
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    • 2023
  • Transparent ZnO (100 nm thick) and ZnO/Ti/ZnO (ZTZ) films were prepared with radio frequency (RF) and direct current (DC) magnetron sputtering on the glass substrate at room temperature. During the ZTZ film deposition, the thickness of the Ti interlayer was varied, such as 6, 9, 12, and 15 nm, while the thickness of ZnO films was kept at 50 nm to investigate the effect of the Ti interlayer on the crystallization and opto-electrical performance of the films. From the XRD pattern, it is concluded that the 9 nm thick Ti interlayer showed some characteristic peaks of Ti (200) and (220), and the grain size of the ZnO (002) enlarged from 13.32 to 15.28 nm as Ti interlayer thickness increased. In an opto-electrical performance observation, ZnO single-layer films show a figure of merit of 1.4×10-11 Ω-1, while ZTZ films with a 9 nm-thick Ti interlayer show a higher figure of merit of 2.0×10-5 Ω-1.

0.65Pb(Zr1-xTix)O3-0.35Pb(Zn1/6Ni1/6Nb2/3)O3 세라믹의 압전 특성 및 압전 에너지 하베스터 적용 (Piezoelectric Properties of 0.65Pb(Zr1-xTix)O3-0.35Pb(Zn1/6Ni1/6Nb2/3)O3 Ceramics and Their Application to Piezoelectric Energy Harvester)

  • 조소라;김대수;조유리;손신중;강형원;남산;한승호
    • 한국전기전자재료학회논문지
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    • 제31권4호
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    • pp.216-220
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    • 2018
  • The piezoelectric properties of $0.65Pb(Zr_{1-x}Ti_x)O_3-0.35Pb(Zn_{1/6}Ni_{1/6}Nb_{2/3})O_3$ ($PZT_x-PZNN$) ceramics with $0.530{\leq}x{\leq}0.555$ were investigated for application to piezoelectric energy harvesters. Although a morphotropic phase boundary (MPB) was found at approximately x = 0.545, the ceramic with the highest figure of merit (FOM) ($d_{33}{\times}g_{33}$) was observed at a composition of x = 0.540. Values of this figure of merit, $d_{33}{\times}g_{33}$, of $19.6pm^2/N$ and $20.2pm^2/N$ were obtained from $PZT_{0.540}-PZNN$ ceramics sintered at $920^{\circ}C$ and $950^{\circ}C$, respectively. A high output power of $937{\mu}W$ and a high power density of $3.3mW/cm^3$ were obtained from unimorph-type piezoelectric energy harvesters fabricated using $PZT_{0.540}-PZNN$ ceramic sintered at $920^{\circ}C$ for 4h.

기판온도가 GZO 투명전도막의 재료평가지수에 미치는 영향 (Effects of Substrate Temperature on Figure of Merit of Transparent Conducting GZO Thin Films)

  • 신현호;정양희;강성준
    • 한국전자통신학회논문지
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    • 제18권5호
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    • pp.797-802
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    • 2023
  • 본 연구에서는 펄스 레이저 증착법으로 기판 온도에 따른 GZO(Ga2O3 : 5 wt %, ZnO : 95 wt %) 박막을 유리 기판에 증착하여 전기적 및 광학적 특성을 조사하였다. XRD측정을 통해 기판 온도에 무관하게 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 300℃ 에서 증착한 GZO 박막이 반가폭 0.38° 로 가장 우수한 결정성을 나타내었다. 기판 온도가 150에서 300℃ 로 증가함에 따라 GZO 박막의 비저항은 감소하는 경향을 보인 반면에 가시광 영역에서의 평균 투과도는 크게 영향을 받지 않는 것으로 조사되었다. 300℃ 에서 증착한 GZO 박막의 재료 평가 지수가 2.05×104-1·cm-1 로 가장 우수한 값을 나타내었고, 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 3.72 × 10-4 Ω·cm 과 87.71 % 이었다. 본 연구를 통해 GZO 박막이 매우 유망한 투명 전도막 재료라는 것을 알 수 있었다.

$(Pb, La)TiO_3$ 세라믹스의 소결 거동 및 유전.초전 특성 (Sintering Behavior, Dielectric and Pyroelectric Properties of $(Pb, La)TiO_3$ Ceramics)

  • 최동구;최시경
    • 한국세라믹학회지
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    • 제31권8호
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    • pp.841-848
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    • 1994
  • The sintering behavior of La-modified PbTiO3 ceramics was investigated in order to improve the poor sinterability of PbTiO3. Addition of La improved the sinterability. It was confirmed that this improvement was due to the decrease in tetragonality ratio c/a of crystal lattice. The variations of dielectric constant and pyroelectric coefficient were measured with temperature. It was observed that with the increase of La content, Curie temperature decreased and dielectric constant at room temperature increased. La-modified PbTiO3 ceramics had smaller pyroelectric figure of merits than those of pyroelectric materials in use. The effects of grain size on dielectric and pyroelectric properties were also investigated. The change of grain size had effect on maximum dielectric constant and pyroelectric coefficient, but is had little effect on pyroelectric figure of merit at room temperature. The closer examination near ferro-paraelectric phase transition temperature revealed that the behavior of phase transition approached a more relaxor character with the increase of La content and the decrease of grain size.

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PbTe계의 열전특성에 대한 미세구조의 영향 (Microstructural Effects on the Thermoelectric Prooperties of PbTe)

  • 송병덕;김문규
    • 한국세라믹학회지
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    • 제27권4호
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    • pp.481-486
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    • 1990
  • Microstructure of polycrystalline Lead Telluride was controlled by the change of sintering conditions. Three properties which determine the thermoelectric figure of merit of the material were measured in the temperature range of 300-650K in order to investigate the effect of each sintering condition on the thermoelectric efficiency. Based on the observed experimental results, defect structure is concluded to be more important than microstructure though both can be controlled by processing variables.

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The Study on an Advanced Algorithm for Auto-generation of MOSAIC Seam Lines

  • Park, Young-Hoon;Kim, Jin-Kwang;Kang, Young-Ku
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2003년도 Proceedings of ACRS 2003 ISRS
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    • pp.464-466
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    • 2003
  • In this paper an advanced algorithm for selecting a seam line automatically, which used to be selected by human operator for mosaicked images is presented. In addition to four factors proposed by automation theory, the FOM(Figure Of Merit) of tie point were taken into account to suggest the method to select a seam line applicatively and the algorithm was applied to mosaic test images.

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