• Geomechanics and Engineering
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• v.28 no.5
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• pp.531-546
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• 2022

Ground displacements caused by the construction of overlapping twin shield tunnels with small turning radius are complex, especially under special geological conditions of construction. To investigate the ground displacements caused due to shield machines in the unique calcareous sand layers in Israel for the first time and determine the main factors affecting the ground displacements, field monitoring, laboratory geological analysis, theoretical calculations, and parameter studies were adopted. By using rod extensometers, inclinometers, total stations, and automatic segment-displacement monitors, subsurface tunneling-induced displacement, surface settlement, and displacement of the down-track tunnel segments caused by the construction of an up-track tunnel were analyzed. The up-track tunnel and the down-track tunnel pass through different stratum, resulting in different construction parameters and ground displacements. The laws of variation of thrust and torque, soil pressure in the chamber, excavated soil quantity, synchronous grouting pressure, and grout volume of the two tunnels from parallel to fully overlapping orientations were compared. The thrust and torque of the shield in the fine sand are larger than those in the Kurkar layer, and the grouting amount in fine sand is unstable. According to fuzzy statistics and Gaussian curve fitting of the shield tunneling speed, the tunneling speed in the Kurkar stratum is twice that in the fine-sand stratum.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.197-197
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• 2011

In this study, in contrast with cases in which Scanning Tunneling Microscopy (STM) tip-induced reactions were instigated by the tunneling electrons, the local electric field, or the mechanical force between a tip and a surface, we found that the tungsten oxide (WO3) covered tungsten (W) tip of a STM acted as a chemical catalyst for the S-H dissociative adsorption of phenylthiol and 1-octanethiol onto a Ge(100) surface. By varying the distance between the tip and the surface, the degree of the tip-catalyzed adsorption could be controlled. We have found that the thiol head-group is the critical functional group for this catalysis and the catalytic material is the WO3 layer of the tip. After removing the WO3 layer by field emission treatment, the catalytic activity of the tip has been lost. 3-mercapto isobutyric acid is a chiral bi-functional molecule which has two functional groups, carboxylic acid group and thiol group, at each end. 3-Mercapto Isobutyric Acid adsorbs at Ge(100) surface only through carboxylic acid group at room temperature and this adsorption was enhanced by the tunneling electrons between a STM tip and the surface. Using this enhancement, it is possible to make thiol group-terminated surface where we desire. On the other hand, surprisingly, the WO3 covered W tip of STM was found to act as a chemical catalyst to catalyze the adsorption of 3-mercapto isobutyric acid through thiol group at Ge(100) surface. Using this catalysis, it is possible to make carboxylic acid group-terminated surface where we want. This functional group-selective adsorption of bi-functional molecule using the catalysis may be used in positive lithographic methods to produce semiconductor substrate which is terminated by desired functional groups.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.261-261
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• 1999

We observed leveling-off of the resistance in granular In/InO$_x$ thin films in the zero-temperature limit. The temperature T$_b$ at which the leveling-off appears gets larger as the sheet resistance R$_n$ increases. This is consistent with the concept that the leveling-off of the resistance is due to the dissipation of the bosonic phase and that the dissipation is enhanced as the resistance increases. The magnetic field dependence of the saturated resistance R$_b$ at low temperatures fits the modified square-root cusp-like form R$_b$/R$_n$=α exp[-b(B/B$_c$-1)$^{-1/2}$] for the magnetic field in the range B$_c$$_f$ where B$_c$ is the onset magnetic field of the resistance leveling-off. α and b are constants of order 1. For B>B$_f$ tansport properties are described by the theory of the fermi insulator. From the results, we attribute the leveling-off to the dissipative quantum tunneling of vortices, which supports the models predicting the vortex-motion-induced insulating phase related with the concept like"dirty boson" [1]l and "hose metal" [2].

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.679-682
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• 2005

Negative-differential conductance (NDC) characteristics as well as negative-differential trans-conductance (NDT) characteristics have been observed in the room temperature I-V characteristics of Field-induced Inter-band Tunneling Effect Transistors (FITETs). These characteristics have been explained with inter-band tunneling physics, from which, inter-band tunneling current flows when the energy bands of degenerately doped regions align, and it does not flow when they don't. FITET is an SOI device and the body region is not directly connected to the external terminal. Therefore, Fermi energy in the body region is determined by electrical coupling among four regions - gate, source, drain and substrate. So, a quasi Fermi energy of the majority carriers in the floating body region can be changed by external voltages, and this causes the energy band movements in the body region, which determine whether the energy bands between degenerately doped junctions aligns or not. This is a key point for an explanation of NDT and NDC characteristics. In this paper, a quasi Fermi energy movement in the floating body region of FITET was investigated by a device simulation. This result was applied for the description of relation between quasi Fermi energy in the body region and external gate bias voltage.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• Journal of the Korean Geotechnical Society
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• v.37 no.10
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• pp.55-63
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• 2021

The construction of shield tunnels is being expanded from the small-bore tunnels such as power, telecommunications, water supply, and sewerage pipes to the large bore tunnels such as road and railway tunnels with the advancement of the shield TBM (Tunnel Boring Machine) manufacturing technology. Accordingly, the construction of twin shield tunnels is increasing. Peck (1969) reported that the surface settlement trough is well described by a Gaussian distribution on a single shield tunnel. Hereafter, many studies about the surface settlement trough were performed by the field measurement, laboratory model test, and numerical analysis. This study confirmed that the additional surface settlement trough induced by the 2^nd tunneling were well described by using each Gaussian curve for the right and left sides of the settlement trough.

• Clean Technology
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• v.11 no.2
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• pp.69-74
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• 2005

A metal ion detector with a submicron size electrode was fabricated by field-induced AFM oxidation. The square frame of the mesa pattern was functionalized by APTES for the metal ion detection, and the remaining portion was used as an electrode by the self-assembly of MPTMS for Au metal deposition. The conductance changed with the quantity of adsorbed copper ions, due to electron tunneling between the mobile and surface electrodes. The smaller electrode has a lower limit of detection due to the enhancement in electron tunneling through metal ions that are adsorbed between the conductive-tip (mobile) and the surface (fixed) electrode. This two-electrode system immobilized with different functional groups was successfully used in the selective adsorption and detection of target materials.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.292-303
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• 2001

This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

• Journal of The Korean Astronomical Society
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• v.29 no.2
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• pp.83-91
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• 1996

We present a model that rotating primordial blackholes(PBHs) produced at the end of inflation generate the random, non-oriented primordial magnetic field. PBHs are copiously produced as the Universe completes the cosmic phase transition via bubble nucleation and tunneling processes in the extended inflation hypothesis. The PBHs produced acquire angular momentum through the mutual tidal gravitational interaction. For PBHs of mass less than 1013g, one can show that the evaporation (photon) luminosity of PBHs exceeds the Eddington limit. Thus throughout the lifetime of the rotating PBH, radiation flow from the central blackhole along the Kerr-geodesic exerts torque to ambient plasma. In the process similar to the Bierman's battery mechanism electron current reaching up to the horizon scale is induced. For PBHs of Grand Unified Theories extended inflation with the symmetry breaking temperature of $T_{GUT}\;\~\;10^{10}$ GeV, which evaporate near decoupling, we find that they generate random, non-oriented magnetic fields of $\~10^{-11}G$ on the last-scattering surface on (the present comoving) scales of $\~O(10)Mpc$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.4
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• pp.47-56
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• 1995

In this paper the model of the MQE-IMD-based neural trigger circuit is improved, where MQW-IMD is a new semiconductor device proposed and experimentally demonstrated by the author for the hardware implementation of the neural networks. The electron energy of AlXGa1-XAsbarrier is calculated by Ensemble Monte Carlo simulation according to the variation of Al mole fraction x and the applied electric field, whtich had been roughly estimated in the previous paper because of the difficulty to get the data. And in the consideration of the tunneling of the confined electrons within the quantum well the accuracy of the impact ionization rate is enhaned. Finally, the dependance of the frequency of pulse-train on the number of quantum wells can be calculated by modelling the effect of the distance of the induced positive charge from the cathode on the electric field at the cathode.