• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.5
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• pp.864-871
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• 2002

Acoustic emission(AE) technique has been applied to not only mechanical property testing but also on-line monitoring of the entire structure or a limit zone only. Although several AE devices have already been developed for on-line monitoring, the price of these systems is very high and it is difficult for the field to apply yet. In this study, we developed a specially designed PC-based leak detection system using A/D board. In this paper, AE technique has been applied to detect leak for heat exchanger by analyzing the characteristics of signal obtained from leak. It was confirmed that the characteristics of the signal generated by the turbulence of gas in the heat exchanger is narrow band signal having between 130-250kHz. Generally, the amplitude of leak signal is increased as the leak size increasing, but showed no significant change at frequency characteristic. Leak source location can be found by determining for the paint of highest signal amplitude by comparing with several fixed sensors. In this paper, AE results are compared with the PC-based leak detection system using A/D board.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.399-405
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• 2020

In the present investigation we show the effect of Al doping on the length, size, shape, morphology, and sensing property of ZnO nanorods. Effect of Al doping ultimately leads to tuning of electrical and optical properties of ZnO nanorods. Undoped and Al-doped well aligned ZnO nanorods are grown on sputtered ZnO/SiO₂/Si (100) pre-grown seed layer substrates by hydrothermal method. The molar ratio of dopant (aluminium nitrate) in the solution, [Al/Zn], is varied from 0.1 % to 3 %. To extract structural and microstructural information we employ field emission scanning electron microscopy and X-ray diffraction techniques. The prepared ZnO nanorods show preferred orientation of ZnO <0001> and are well aligned vertically. The effects of Al doping on the electrical and optical properties are observed by Hall measurement and photoluminescence spectroscopy, respectively, at room temperature. We observe that the diameter and resistivity of the nanorods reach their lowest levels, the carrier concentration becomes high, and emission peak tends to approach the band edge emission of ZnO around 0.5% of Al doping. Sensing behavior of the grown ZnO nanorod samples is tested for H₂ gas. The 0.5 mol% Al-doped sample shows highest sensitivity values of ~ 60 % at 250 ℃ and ~ 50 % at 220 ℃.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1444-1445
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• 2006

Carbon nanotubes (CNTs) are grown on TiN-Coated silicon substrates at $700^{\circ}C$ using an ICP-CVD method. Ni catalysts for CNT growth are formed using an RF magnetron sputtering system. Post-treatment using hydrogen ions has been performed in the ICP reactor by varying the treatment period. The characterization using various techniques, such as FESEM, HRTEM, and Raman spectroscopy, show that the physical dimension as well as the crystal quality of CNTs are changed by the post-treatment process. It is also seen that the hydrogen ion-bombardment may change the surface structure of CNTs, which may lead to produce better electron emission properties. The physical reason for all the measured data obtained are discussed to establish the relationship between the structural property and the electron emission characteristic of CNTs.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.82-88
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• 2017

Ink-jet printing techniques with ceramic ink, which contains ceramic pigments as colorant, are in increasingly use in the ceramic industry. Generally, ceramic pigments that are produced by conventional method show diameters of several micrometers; these micrometer sized particles in the ink-jet printing process can cause undesirable behavior such as print head nozzle clogging. To prevent this problem, a particle size reduction process is required. In this study, CMYK (cyan, magenta, yellow, black) pigments were synthesized via solid state method. Each pigment particle was milled to submicron size by an attrition mill. The effects of micronizing on the morphology, mechanical property, crystal structure and color property of the CMYK ceramic pigments were investigated by field emission scanning electron microscopy (FE-SEM), particle size analysis (PSA), X-ray diffraction (XRD) and CIE $L^{\ast}a^{\ast}b^{\ast}$.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.75-80
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• 2012

Polymer composites which have electrical properties have been studied in various industries. The Multi-walled carbon nanotube (MWCNT) are thought to be reinforcements for polymers because of their high aspect ratio and specially mechanical, thermal and electrical properties. We introduced MWCNT and impact modifier in order to improve thermal and mechanical properties of Polyphenylene sulfide (PPS) and give electric characteristic to PPS. The thermal properties were investigated by Differential scanning calorimeter (DSC) and Thermogravimetric analysis (TGA). The morphology, mechanical properties and electrical characteristic were performed by Field emission scanning electron microscopy (FE-SEM), Izod impact tester and surface resistance meter. As a result, we could find that the PPS/MWCNT composites have high conductivity and good mechanical properties than neat PPS resin.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• Korean Journal of Metals and Materials
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• v.48 no.4
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• pp.335-341
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• 2010

High-quality single-walled carbon nanotubes (SWCNTs) were synthesized by catalytic decomposition of $C_2H_2$ using Fe-Mo/MgO catalyst at $800^{\circ}C$. The as-synthesized SWCNTs typically occurred in the form of a bundle with a diameter of 10~20 nm together with amorphous carbon and catalytic impurities, which were removed by a two-step purification process consisting of oxidation and an acid treatment. The oxidation step, using an $O_2$-Ar mixture at $380^{\circ}C$ for 5 hr in a vertical-type furnace and a $HNO_3$ treatment at $100^{\circ}C$ for one hour, was utilized to remove the amorphous carbon particles. Subsequently, metallic catalysts were removed in HCl at room temperature for 5 hr under magnetic stirring. The SWCNT suspension was prepared by dispersing the purified SWCNTs in an aqueous sodium dodecyl benzene sulfonate solution with horn-type sonication. This was then air-sprayed on glass to fabricate CNT field emitters. The samples had a turn-on field value of 4 V/${\mu}m$ and a current density of 0.67 mA/$cm^2$ at 9 V/${\mu}m$. Increasing the HCl treatment time improved the field emission properties.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.44 no.7
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• pp.568-575
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• 2016

For the combat survivability, an infrared signature emitted from aircraft is needed to be predicted and analyzed. In this study, we studied the infrared signature from the exhaust plume from the viewpoint of Infrared(IR) detector. The Line-By-Line method using the radiation database is used for radiative property, and radiative intensity analysis is conducted along 1-D line of sight based on the radiative property. The numerical thermo-fluid field for the plume is conducted by ANSYS FLUENT, while setting the lines of sight having the different detection angle on the thermo-fluid field. We found the high IR signature on the line of sight passing through the locally high temperature region of the plume inside, and the strongest signature from the line of sight toward the nozzle surface. Based on this, it confirms the influence of the surface radiative emission on the infrared signature.