• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.23-23
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• 1998

High resolution field emission dispplay(FED) devices of 5 inch diagonal in size are fully developped for the applications of near-future flat ppanel dispplays. Under the unique gate-switching drive scheme electron trajectory pprofiles are simulated and tested by considering leakage effects of each ppixel. Uniquely-pprinted sppacer with high asppect ratio are fabricated on real ITO glass for high vacuum ppackaging. In addition new gas aging scheme of stabilizing field emitting array are extensively investigated during the sealing and exhausting pprocess in order to pprevent oxidation effects on the micro tipp. Finally fulll color images of 64 gray scale will be demonstrated.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.29-35
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• 2009

Field emission displays(FED) are currently being study as a potential flat technology. The purpose of this project shows the research result of vacuum packaging technology for the development of FED. For FED vacuum packaging, the bonding of glass/glass, the exhaust of vacuum and getter technology have been studied for vacuum packaging technology The simulation and vacuum sealing, and glass/glass bonding are also extensively studied. The glass/glass bonding is formed by using the frit glass and the Inside pressure of complete panel showed of $2{\times}10^{-5}$[Torr]. As a getter result, the increase of pressure has been showed the decrease of outgassing effect by using thin film getter.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.4
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• pp.754-759
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• 2007

Field emission displays (FED) are currently being explored as a potential flat panel display technology. Specifically, the optimization pf efficient bin emitting phosphors in the $Y_2O_3-Nb_2O_5$ system and influence of particle size of phosphors on the luminescent properties was studied. Under 254 nm excitation, Bi activated $YNbO_4$ phosphors showed a strong and relatively narrow blue omission band, peaking at about 420-450 nm. Especially 0.4 wt% Bi doped yttrium phosphors showed the maximum emission intensity which is almost three times as much as that of $Y_2SiO_5:Ce$ phosphors. Finally, Ce doped $Y_2SiO_5$ phosphors exhibited strong and broad blue emission band, centered at 390-420 nm and maximum emission intensity at the doping concentration of 0.02-0.03 mol.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1529-1531
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• 2008

Since the discovery over a decade ago, carbon nanotubes (CNTs) have been attracting considerable attentions both from scientists and engineers. Because of the excellent field emission properties, such as high aspect ratio, extremely small diameter, and high emission current, CNTs become a potential candidate as field emitter for field emission display (FED) and lighting (FEL) as backlight for LCD. Due to the exceptional physical properties, such as superior thermal and electrical conductivities, as well as high stiffness and strength, the CNT-based composites can be as light-weight heat-sink or thermal spreader materials used for power electronic devices, such as power LED for general illumination. The CNTs for above applications will be reviewed, and related materials and devices will be demonstrated in this paper.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.566-568
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• 2003

The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.