• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.8-15
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• 2007

In this paper, we fabricated the field emitter display using oxidized porous polysilicon(OPPS). Their field emission characteristics and the brightness were investigated for each pixel. The OPPS emitter was operated to each pixel using passive matrix for application of large panel display. We set up the proper thickness and width of upper electrode. The fine structure of OPPS was analyzed and the field emission characteristics of each pixel were investigated. As a result of field emission characteristics of different upper electrode thickness and width, we confirmed that the most efficient thickness was 2nm/7nm and increased the emission efficiency over the width of 2.5 mm. Even if field emission characteristics of each pixel was a little different but we confirmed the same leakage current and emission current, emission efficiency at each pixel. The leakage current and emission current was decreased according to the time increases but all of each pixel were uniformly decreased. We confirmed that the brightness of each pixel was not different and the brightness of OPPS field emitter was 700 cd/m2 at the Vps=20 V. Accordingly, the patterned OPPS field emitter can be applied to high quality field emission display devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.866-869
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• 2004

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated by using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel was around 390 $^{\circ}C$ and the vacuum level was obtained with $1.4{\times}10^{-5}$torr at the sealing. The field emission properties of the diode type CNT FED panel were characterized Now, we are developing a triode type CNT FED with a self-aligned gate-emitter structure.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.02a
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• pp.100-100
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• 1997

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.462-464
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• 2004

We studied the growth characteristics of carbon nanotubes which was grown from uniformly dispersed iron nanoparticles prepared from iron-acetate [Fe(II)$(CH_3COO)_2$]. The density of CNT was controlled from precursor concentrations. We also investigated the field emission properties of CNTs. We found that the optimization of CNT density is an important factor for field_emission properties.

• Journal of the Korean Ceramic Society
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• v.35 no.3
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• pp.245-250
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• 1998

Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+}\;doped\;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.76-79
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• 2003

The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.70-72
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• 2000

In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.

• Journal of the Korean Ceramic Society
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• v.43 no.11 s.294
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• pp.743-745
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• 2006

The luminescence properties of $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphor for Field Emission Displays (FEDs) have been investigated in powders prepared though solid-state reactions. $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphors indicate a higher luminescent intensity, and have been found to have potential for field emission displays. The addition of Ba increased the luminescence intensity at 617 nm by up to 30%. Ba ions are effective in producing the energy transfers from host-to-activator in 4f-5d transitions.