• JSTS:Journal of Semiconductor Technology and Science
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• 제13권6호
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• pp.581-588
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• 2013

This paper presents a study of the process temperature dependence of $Al_2O_3$ film grown by thermal atomic layer deposition (ALD) as a passivation layer in the crystalline Si (c-Si) solar cells. The deposition rate of $Al_2O_3$ film maintained almost the same until $250^{\circ}C$, but decreased from $300^{\circ}C$. $Al_2O_3$ film deposited at $250^{\circ}C$ was found to have the highest negative fixed oxide charge density ($Q_f$) due to its O-rich condition and low hydroxyl group (-OH) density. After post-metallization annealing (PMA), $Al_2O_3$ film deposited at $250^{\circ}C$ had the lowest slow and fast interface trap density. Actually, $Al_2O_3$ film deposited at $250^{\circ}C$ showed the best passivation effects, that is, the highest excess carrier lifetime (${\tau}_{PCD}$) and lowest surface recombination velocity ($S_{eff}$) than other conditions. Therefore, $Al_2O_3$ film deposited at $250^{\circ}C$ exhibited excellent chemical and field-effect passivation properties for p-type c-Si solar cells.

• 정보관리학회지
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• 제20권4호통권50호
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• pp.1-21
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• 2003

본 연구는 국내 과학기술분야 인용정보의 형태 및 출판경과시간에 따른 인용비율과 인용 나이를 분석하여 과학기술문헌의 수명을 측정하고, 국내 연구자들의 국내외 정보원의 의존도를 밝히는데 그 목적이 있다. 이를 위하여 국내 과학기술분야 가운데 대표적인 영역인 기계, 건축, 화학, 전기전자분야에 대한 학술잡지 198건의 논문기사에 인용된 2,619건의 문헌을 대상으로 정보 인용형태의 차이와 특성을 비교 분석하였다. 그 결과 학술잡지, 도서, 회의자료, 연구보고서의 순서로 많이 인용되고 있었으며, 정보의 해외의존도는 화학분야가 가장 높았다. 인용문헌의 나이분석에서 국내문헌의 약 70%이상이 출판된 지 5년 이내의 문헌이었고, 전체로는 약60% 이상이 출판된 지 10년 이내의 정보원으로 나타났다. 또한 문헌의 반감기는 기계 6.50년, 건축 5.45년, 화학 9.65년, 전기전자 5.60년으로 측정되었다.

• 한국자기학회지
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• 제5권3호
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• pp.203-209
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• 1995

보자력이 다른 NiFe와 Co를 자성층으로 하고 Cu를 사잇층으로 하는 $glass\[Cu_{x\AA}\NiFe_{50\AA}\Cu_{x\AA}\Co_{50\AA}](X;\=\;8,\;10,\;14,\;18,\;22,\;26,\;28,\;38,\;48,\;58\;\AA)$ 다층박막을 D.C magnetron sputtering 방법으로 제작하여 사잇층인 Cu 두께, 적층횟수 및 열처리가 자기저항비에 미치는 영향과 자기 곡선의 변화에 대해 연구하였다. 자기저항 측정시 인가 자장은 전류의 방향과 수평, 수직하게 인가하여 측정하였다. Cu 두께가 대략 $10\;\AA$에서 최대 자기저항비를 보이고 있으며, 두께가 증가함에 따라 진동하는 경향은 나타냈다. 적층횟수에 따라서는 적층횟수가 증가함에 따라 증가하였으며, 단지 4층의 경우에는 오히려 3층 보다 감소하였다. 열처리의 경우 온도의 증가에 따라 증가하다가 $250^{\circ}C$ 이상에서는 다시 감소하는 것을 나타났다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2006년도 춘계학술대회논문집
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• pp.941-945
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• 2006

In the development of electricity generating wind turbines for wind farm application, only two types have survived as the methods of power regulation; stall regulation and fun span pitch control. The sound measurement procedures of IEC 61400-11 are applied to field test and evaluation of noise emission from each of 1.5 MW and 660 kW wind turbine generators (WTG) utilizing the stall regulation and the pitch control for the power regulation, respectively. Apparent sound power level, wind speed dependence and third-octave band levels are evaluated for both of WTGs. It is found that while 1.5 MW WTG using the stall control is found to emit lower sound power than 660 kW one using the pitch control at low wind speed (below 8 m/s), sound power from the former becomes greater than that of the latter in the higher wind speed. Equivalent continuous sound pressure levels (ECSPL) of the stall control type of WTG vary more widely with wind speed than those of the pitch control type of WTG These characteristics are believed to be strongly dependent on the basic difference of the airflow around the blade between the stall regulation and the pitch control types of WTG. These characteristics according to the methods of power regulation lead to the very different noise emission characteristics of WTG depending on the seasons because the average wind speed in summer is lower than the critical velocity over which the airflow on the suction side of blade in the stall types of WT are separated. These results propose that, in view of environmental noise regulation, the developer of wind farm should give enough considerations to the choice of power regulation of their WTG based on the weather conditions of potential wind farm locations.

• 한국자기학회지
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• 제11권5호
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• pp.202-210
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• 2001

자연산화 $Al_2$O$_3$층이 형성된 하부형태 터널링 자기저항 다층박막이 기본진공도 $10^{-9}$ Torr을 유지하는 UHV 챔버내에서 이온빔 스퍼터링과 dc 마그네트론 스퍼터링 법으로 증착되었다. 제작된 스핀의존터널링 (SDT) 접합소자의 최대 터널링자기저항(TMR)와 최소 접합저항과 면적곱(R$_{j}$ A) 각각 16~17%와 50-60$\Omega$$\mu\textrm{m}$$^2$이었다. 자기장하에서 열처리한 SDT접합에 대한 TMR향상과 (R$_{j}$ A) 감소의 변화는 미미하였다. 접합면적이 81$\mu\textrm{m}$$^2$에서 47$\mu\textrm{m}$$^2$까지 접합크기가 작이짐에 따라 TMR이 증가하고 (R$_{j}$ A)이 감소하는 의존성이 관찰되었다. 이러한 현상을 하부층 단자의 판흐름 저항값 의존효과와 스핀채널효과로 설명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.764-768
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• 2016

To investigate excess $Na^+$ effect, $Bi_{0.5}(Na_{0.78+x}K_{0.22})_{0.5}TiO_3$ ($0{\leq}x{\leq}0.05$) (BNKT) ceramics were prepared by using a conventional solid-state reaction method. The structure and ferroelectric properties of BNKT ceramics were characterized by XRD (X-ray diffraction) and polarization dependence by external electric field. Also, the temperature dependence of dielectric constant and loss were studied. From these results, it was found that appropriate excess $Na^+$ into BNKT ceramics compensate the volatility and induce dense ceramics. The enhanced piezoelectric coefficient (158 pC/N) and depolarization temperature ($202^{\circ}C$) were obtained for the x=0.01 composition.

• 한국정보통신학회논문지
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• 제2권3호
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• pp.431-437
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• 1998

본 논문에서는, ULSI에서 기존의 실리콘 절연막을 대체할 것으로 여겨지는 질화 산화막(NO)과 재산화 질화 산화막(ONO)의 전기적 특성을 조사하였다. 특히, 질화 및 재산화 시간에 따른 NO와 ONO막의 전류전압 특성, 게이트 전압이동, 시간종속 절연항복 특성(TDDB) 변화를 측정하였고, 외부 온도 변화에 따른 최적화 된NO와 ONO막의 누설 전류와 절연체가 항복에 이르게 하는 전하량(Q$\_bd$)변화를 측정하였다. 그런 다음 기존의SIO$\_2$와 비교하였다. 측정 결과로부터, NO와 ONO막은 공정시간에 상당히 의존적이었으며, 최적화된 ONO막은 같은 전계를 유지하는 동안 절연 특성 및 Q$\_bd$특성에서 NO막과 SIO$\_2$에 비하여 우수한 성능을 보였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.834-838
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• 2011

This research shows the electrical characteristic using excellent epoxy nano-composite of MgO 5.0 wt% and $SiO_2$ 0.4 wt% in mechanical strength test depending on nano-additive. First of all, volume resistance depending on nano-additive and temperature using high resistance meter (HP. 4329A) by increasing 10, 100, 1,000 V of applying voltage was measured. Moreover, temperature range of $25{\sim}120^{\circ}C$ with virgin sample was tested using TO-9B oven by Ando Company. The result showed that virgin and the samples added with MgO and $SiO_2$ had similar value of volume resistance in low temperature and low electric field region and reduced with slow slope. The nano-composite's volume resistance of sample added with MgO and $SiO_2$ had higher value than virgin sample's volume resistance in high temperature region more than $80^{\circ}C$. Moreover, the slope has steeply reduced. The volume resistance of sample added with MgO 5.0 wt% was $8.38{\times}10^{13}\;{\Omega}{\cdot}cm$ and it was 6.8 times more than virgin sample in high temperature at $120^{\circ}C$. The insulation characteristics were constant although filler has changed in low temperature region. But, in high temperature region, the value of volume resistance of sample with MgO 5.0 wt% was 7.6 times more than the virgin sample's volume resistance.