• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.258-263
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• 2004

Mechanical property evaluation of micrometer-sized structures is necessary to help design reliable microelectromechanical systems(MEMS) devices. Most material properties are known to exhibit dependence on specimen size and such properties of microscale structures are not well characterized. This paper describes techniques developed for tensile testing of materials used in MEMS. Epi-polycrystalline silicon is currently the most widely used material, and its tensile strength has been measured as 1.52GPa. We have developed an uniaxial testing machine for testing microscale specimen using electro-magnetic actuator. The field magnet and the moving coil taken from an audio-speaker were utilized as the components of the actuator. Structure of specimen was designed and manufactured for easy handling and alignment. In addition to the static tensile tests, new techniques and procedures for measuring strength are described.

• 대한기계학회논문집A
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• 제31권6호
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• pp.644-650
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• 2007

Mechanical property evaluation of micrometer-sized structures is necessary to help design reliable microelectromechanical systems(MEMS) devices. Most material properties are known to exhibit dependence on specimen size and such properties of microscale structures are not well characterized. This paper describes techniques developed for tensile testing of thin film used in MEMS. Epi-polycrystalline silicon is currently the most widely used material, and its tensile strength has been measured as 1.52GPa. We have developed a tensile testing machine for testing microscale specimen using electro-magnetic actuator. The field magnet and the moving coil taken from an audio-speaker were utilized as the components of the actuator. Structure of specimen was designed and manufactured for easy handling and alignment. In addition to the static tensile tests, it is described that new techniques and procedures can be adopted for high cycle fatigue test of a thin film.

• 천문학회지
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• 제32권1호
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• pp.17-39
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• 1999

We investigate dynamical evolution of globular clusters with multi-mass component under the Galactic tidal field. We compare the results with our previous work which considered the cases of single-mass component m the globular clusters. We find the followings: 1) The general evolutions are similar to the cases of single-mass component. 2) There is no evidence for dependence on the orbital phase of the cluster as in the case of single-mass component. 3) The escape rate in multi-mass models is larger than that in the single-mass models. 4) The mass-function depends on radius more sensitively in anisotropic models than in isotropic models.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.200-206
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• 2000

We have investigated the activation magnetic moment, which characterizes the basis magnetic moment acting as a single magnetic particle during magnetization reversal. The activation magnetic moment was measured from each local area on continuous ferromagnetic thin films, by analyzing the magnetic field dependence of magnetization reversal of the corresponding local area based on a thermally activated relaxation process. It was found that the activation magnetic moment was nonuniform on submicrometer scale; the fluctuation increased with increasing the number of layers in Co/Pd multilayers. The distribution could be well analyzed by exp($\delta$m$\^$3/2/), where $\delta$m is the deviation of the activation magnetic moment from the mean value.

• 천문학회보
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• 제36권1호
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• pp.35.1-35.1
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• 2011

The solar X-ray telescopes, the Yohkoh SXT and the Hinode XRT, have observed for a couple of decades a variety of coronal structures in the range of wide field-of-view (FOV) covering the full solar disk. It has been emphasized that the optical structure of solar telescopes should be designed with care for improving the uniformity over the full FOV. The vignetting effect is one of the important optical characteristics for describing the performance of a telescope, which reflects the ability of collecting the incoming light at different locations and different photon energies. The correction of this vignetting effect would be an important calibration step that should be performed in advance, especially when the observed images are to be used for photometric purposes. Since the vignetting effect of solar X-ray telescopes shows wavelength dependence, a special care should be taken when, for example, performing the temperature analyses with thin and thick filters for flaring activities observed at the periphery of the full FOV. The results of analysis of pre-launch calibration data for the evaluation of vignetting effect will be introduced in detail.

• E2M - 전기 전자와 첨단 소재
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• 제8권5호
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• pp.626-632
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• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 한국세라믹학회지
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• 제37권1호
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• pp.63-69
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• 2000

Electrically-induced strain(S) and polarization(P) for Pb(Sc1/2Nb1/2)O3-PbTiO3(1-x)PSN-xPT) crystalline solutions were studied. From the compositional dependence of S and P we could observe two maximum values at x=0.10 and x=0.425. It is considered that PSNT10(x=0.10) composition is the structural phase boundary to indicate the variable order-disorder[VOD] region. PSNT(x=0.425) composition is the morphotropic phase boundary[MPB] to indicate the rhombohedral to tetragonal phase transition. Higher S (0.437%) and P (0.3974$\mu$C/$\textrm{cm}^2$) values were attained by the La substitution (5 wt%) at Pb site in the MPB composition of 57.5PSN-42.5PT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.378-381
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• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.149-152
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• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.