• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.198-201
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• 1996

In order to investigate control factors to critical current density, Ag sheathed Bi2223 superconducting tapes were fabricated using PIT process. Optimizing the reduction ratio of rolling, critical current density 7f rolled Bi2223 tape could be improved with the value of 15,000 A/$\textrm{cm}^2$(77 K, zero field). The correlation between J$\_$c/ and work inhomogeneity was revealed as a dependence of COV of measured oxide layer thickness.

• 한국융합학회논문지
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• 제2권2호
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• pp.1-5
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• 2011

본 연구에서는 제조업이라는 특수성 때문에 상대적으로 정보화가 늦게 도입된 기계산업분야에 있어서 정보화 특히, ERP를 도입하여 생산성 및 조직문화가 변화된 것을 조사 및 분석하였다. 설문조사 및 현장실태조사를 통해 해당 기업들은 ERP 등의 정보서비스의 이용률과 의존도가 상당히 높게 나타났지만, 초기 도입 및 유지비용 문제와 잦은 이직률에 따른 지속적인 유지보수 및 교육지원 등이 문제로 나타났다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2009년도 Korea Superconductivity Society Meeting 2009
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• pp.32-32
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• 2009

• 한국가시화정보학회지
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• 제11권2호
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• pp.46-54
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• 2013

Study of the wave structure and shear layer in the vicinity of a wall mounted cavity is done by time averaged colour schlieren and time resolved instantaneous shadowgraph technique in an M=1.7 flowfield. Effect of change of cavity width on flow structure is investigated by using constant length to depth (L/D) ratio cavity models with varying length to width (L/W) ratio of 0.83 to 4. The time averaged shock wave structure was observed to change with change in cavity width. Dependence of the shock angle at the leading edge on the shear layer width is also evident from the images obtained. Unsteadiness in the flow field in terms of shear layer dynamics and quasi steady nature of shock waves was evident from the images obtained during instantaneous shadowgraph experiments. Apart from the leading and trailing edge shocks, several other waves and flow features were observed. These flow features and the associated physical phenomena are discussed in details and presented in the paper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.508-508
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• 2012

CST microwave studio is used to simulate the plasma profile of the 450mm CCP source. Standing wave effect becomes important at the high frequency as the electrode radius increases. To solve plasma non-uniformity problem, we designed multi electrode chamber to decreasing standing wave effect. Simulation showed the ratio of input power of each electrode is related with electric field strength. The multi electrode was constructed and measured by 2D probe arrays using floating harmonic method. Uniformity of 450 mm CCP was changed by the ratio of input power of each electrode. We described this dependence with circuit model.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.50-50
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• 2011

The aluminum nitride films were prepared by RF magnetron sputtering using an AlN ceramic target. The crystallinity, grain size, Al-N bonding and thermal conductivity were investigated in dependence on the plasma power densities (4.93, 7.40, 9.87 W/$cm^2$) during sputtering. High thermal conductivity is important properties of A1N passivation layer for functioning properly in thermal inkjet printhead. The crytallinity, grain size, Al-N bonding formation and chemical composition were observed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS), respectively. The AlN thin film was changed from amorphous to crystalline as the power density was increased, and the largest grain size appeared at medium power density. The near stoichiometry Al-N bonding ratio was acquired at medium power density. So, we know that the AlN thin film had better thermal conductivity with crystalline phase and near stoichometry Al-N bonding ratio at 7.40 W/$cm^2$ power density.

• EDISON SW 활용 경진대회 논문집
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• 제4회(2015년)
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.234-238
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• 1987

In this paper, the used specimen composition was added basic additives ($Bi_2O_3\;lmol%$, $Sb_2O_3\;lmol%$, CoO 0.5 mol%, MnO 0.5mol%) to ZnO powder, and $TiO_2$ (1,2,3,4 mol%) to the above basic composition. It appears that there are four regions of conduction current depended upon the strength of the applied electric field ; Ohimic region, Poole-Frenkel region, Schottky region and Tunneling region. Increasing of $TiO_2mol%$, the breakdown voltages of ZnO ceramic varistors are decreased. The decrease of breakdown voltages was explained with the decrease of potential barrier height. Moreover, V-I characteristics with temperature dependence are decreased with increasing of $TiO_2mol%$.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.300-303
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• 2000

The generation of the intermodulation noises in microwave isolators has been studied in relation to the characteristics of YIG ferrites designed for this application. We have investigated the influences of porosity and crystalline anisotropy related to the magnetic loss, which causes the generation of intermodulation signals. The power dependence of the intermodulation power level is stressed as the crystalline anisotropy decreases. These results are consistent with the nonlinear effects of a single normal mode before the excitation of the spin-waves. It also appears that this power level is proportional to the magnitude of dc bias magnetic field.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권7호
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• pp.322-327
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• 2002

Temperature-dependent current-voltage characteristics of organic light-emitting diodes(OLEDs) were studied in a device structure of ITO/TPD/Alq$_3$/Al to understand conduction mechanism. The current-voltage characteristics were measured in the temperature range of 8K ~ 300K. We analyzed an electrical conduction mechanism of the OLEDS using space-charge-limited current(SCLC) and Fowler-Nordheim tunneling. In the temperature range above 150k, the conduction mechanism could be explained by space charge limited current from the inversely proportional temperature dependence of exponent m. The characteristic trap energy is found to be about 0.15ev. At low temperatures below 150k, the Fowler-Nordheim tunneling conduction mechanism is dominant. We have obtained a zero field barrier height to be about 0.6~0.8eV.