• Journal of The Korean Astronomical Society
• /
• v.32 no.1
• /
• pp.17-39
• /
• 1999

We investigate dynamical evolution of globular clusters with multi-mass component under the Galactic tidal field. We compare the results with our previous work which considered the cases of single-mass component m the globular clusters. We find the followings: 1) The general evolutions are similar to the cases of single-mass component. 2) There is no evidence for dependence on the orbital phase of the cluster as in the case of single-mass component. 3) The escape rate in multi-mass models is larger than that in the single-mass models. 4) The mass-function depends on radius more sensitively in anisotropic models than in isotropic models.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.200-206
• /
• 2000

We have investigated the activation magnetic moment, which characterizes the basis magnetic moment acting as a single magnetic particle during magnetization reversal. The activation magnetic moment was measured from each local area on continuous ferromagnetic thin films, by analyzing the magnetic field dependence of magnetization reversal of the corresponding local area based on a thermally activated relaxation process. It was found that the activation magnetic moment was nonuniform on submicrometer scale; the fluctuation increased with increasing the number of layers in Co/Pd multilayers. The distribution could be well analyzed by exp($\delta$m$\^$3/2/), where $\delta$m is the deviation of the activation magnetic moment from the mean value.

• The Bulletin of The Korean Astronomical Society
• /
• v.36 no.1
• /
• pp.35.1-35.1
• /
• 2011

The solar X-ray telescopes, the Yohkoh SXT and the Hinode XRT, have observed for a couple of decades a variety of coronal structures in the range of wide field-of-view (FOV) covering the full solar disk. It has been emphasized that the optical structure of solar telescopes should be designed with care for improving the uniformity over the full FOV. The vignetting effect is one of the important optical characteristics for describing the performance of a telescope, which reflects the ability of collecting the incoming light at different locations and different photon energies. The correction of this vignetting effect would be an important calibration step that should be performed in advance, especially when the observed images are to be used for photometric purposes. Since the vignetting effect of solar X-ray telescopes shows wavelength dependence, a special care should be taken when, for example, performing the temperature analyses with thin and thick filters for flaring activities observed at the periphery of the full FOV. The results of analysis of pre-launch calibration data for the evaluation of vignetting effect will be introduced in detail.

• Electrical & Electronic Materials
• /
• v.8 no.5
• /
• pp.626-632
• /
• 1995

In this paper, The effect of the impedances in SNOSFET's memory devices has been developed. The effect of source and drain impedances measured by means of two bias resistances - field effect bias resistance by inner region, external bias resistance. The effect of the impedances by source and drain resistance shows the dependence of the function of voltages applied to the gate. It shows the differences of change in source drain voltage by means of low conductance state and high conductance state. It shows the delay of threshold voltages. The delay time of low conductance state and high conductance state by the impedances effect shows 3[.mu.sec] and 1[.mu.sec] respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.6
• /
• pp.32-37
• /
• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.63-69
• /
• 2000

Electrically-induced strain(S) and polarization(P) for Pb(Sc1/2Nb1/2)O3-PbTiO3(1-x)PSN-xPT) crystalline solutions were studied. From the compositional dependence of S and P we could observe two maximum values at x=0.10 and x=0.425. It is considered that PSNT10(x=0.10) composition is the structural phase boundary to indicate the variable order-disorder[VOD] region. PSNT(x=0.425) composition is the morphotropic phase boundary[MPB] to indicate the rhombohedral to tetragonal phase transition. Higher S (0.437%) and P (0.3974$\mu$C/$\textrm{cm}^2$) values were attained by the La substitution (5 wt%) at Pb site in the MPB composition of 57.5PSN-42.5PT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.378-381
• /
• 2001

The electron drift mobility of poly(4,4'-cyclohexylidenediphenyl carbonate)(PC-Z) doped with 3,5-dimethy-3,5-di-t-butylstilbenequinone(MBSQ), 3,5,3,5-tetra-t-butyl stilbenequinone(TMSQ) and 3,5,3,5-tetra-methyl stilbenequinone(TMSQ) was measured by the time-of-flight technique. The electric field and temperature dependences of the electron drift mobility were discussed with Poole-Frenkel, Arrhenius formulations and non-Arrhenius type of temperature dependence. It was assumed that the hopping sites were Gaussian distribution. Mobility and activation energy of MBSQ were increased with increasing dopant. However, mobilities and activation energy of TBSQ and TMSQ were increased and decreased, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.11a
• /
• pp.149-152
• /
• 2000

AC impedance measurements on poly-p-phenylenevinylene (PPV) LEDs in the frequency range between 10 Hz and 10$\^$6/ Hz were carried out. The complex-plane impedance spectra indicate that PPV devices can be represented by equivalent circuits that corresponds to the bulk and interfacial regions at high and low frequencies, respectively. As a result of complex impedance analysis through the separation of bulk and interfacial region impedances, increase of forward bias in Al/PPV/ITO devices gave rise to relative decrease of the interfacial region impedance. Above the electric field of 10$\^$6/ V/cm the PPV device showed a space charge limited current (SCLC) conduction. The dependence of the transport mechanism and dielectric properties on the applied bias voltage is discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.48-51
• /
• 1997

(Pb. La)TiO$_3$ thin films were fabricated by sol-gel Processing and spin-coated on the Pt substrate. The spin-coated PLT films were sintered at 75$0^{\circ}C$ for 5min by rapid thermal ann La content dependence of the electrical properties of the PLT thin films are discussed. Wit La mole% from 20 to 36mo1e%. the dielectric constant of the PLT thin films decreased f 570. P-E hysteresis loops changed from ferroelectric to paraelectric. and the charge storage charging time decreased. The Curie Point decreased with increasing La content. The leak density also decreased and La 36mo1% species shows mood characteristics less than 10- electric field 500 (KV/cm) Because of the broad range of composition-controlled ferroelectric PLT thin films are suitable for memory application.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.12 no.1
• /
• pp.203-208
• /
• 2004

To make practical applications of Al-Zn-Mg ternary aluminum alloy effectively in various field, a series of static creep tests under the 16 temperature-stress combination conditions had been performed. The creep tester with constant stress loading was designed and made by the authors and used in this study. The higher the creep temperature rose, the less the stress exponents became. The bigger the applied stresses became, the less values the creep strain activation energy showed. The life prediction constant of Larson-Miller parameter was calculated as about 2.3. In the fractography, the ductile fracture with dimples by intergranular breakage was primarily observed. We can make practical use of these test data in the design, the life prediction and the prevention of the accidents of the thermal facilities, etc.