• 제목/요약/키워드: Field Emission

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보론-도핑된 다이아몬드 박막의 전계방출 특성 (Field emission properties of boron-doped diamond film)

  • 강은아;최병구;노승정
    • 한국진공학회지
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    • 제9권2호
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    • pp.110-115
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    • 2000
  • 열-필라멘트 CVD 장치를 이용하여 다이아몬드 박막의 증착 조건을 최적화시켰다. $B_4C $ 고체 펠렛을 사용하여 보론두핑된 다이아몬드 박막을 제조하여 그 질적 특성을 알아보고, 전류전압 특성과 전계 방출 측정을 통해 박막의 전계방출소자(field emission display (FED)로의 특성을 조사하였다. 보론 도핑의 양이 증가함에 따라 다이아몬드 결정의 평균 입자 크기가 조금씩 감소하지만 다이아몬드의 질은 소량 도핑인 경우에 크게 바뀌지 않았다. Al/Diamond/p-Si 소자의 전류전압 특성을 조사한 결과 도핑된 다이아몬드 박막의 전류는 도핑되지 않은 박막의 전류에 비해 $10^4$~$10^5$배 정도 증가하였다. 전계방출 특성을 조사한 결과 보론-도핑이 증가함에 따라 점차 낮은 전기장에서 전자를 방출하며, 또한 높은 방출 전류를 나타냈다. 전자가 방출되기 시작하는 onset-field는 펠렛의 수가 2개일 때 15.5 V/$\mu\textrm{m}$, 3개일 때 13.6 V/$\mu\textrm{m}$, 4개일 때는 11.1 V/$\mu\textrm{m}$. 체계적으로 감소하였다. 도핑의 강도가 세어짐에 따라 Fowler-Nordheim 그래프의 기울기는 감소하는 경향을 보였으며, 이로서 보론 도핑으로 인해 유효 장벽 에너지가 감소되어 전자 방출 특성이 향상됨을 알 수 있었다.

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Improving the Long-term Field Emission Stability of Carbon Nanotubes by Coating Co and Ni Oxide Layers

  • 최주성;이한성;이내성
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.18.1-18.1
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    • 2011
  • Some applications of carbon nanotubes (CNTs) as field emitters, such as x-ray tubes and microwave amplifiers, require high current emission from a small emitter area. To emit the high current density, CNT emitters should be optimally fabricated in terms of material properties and morphological aspects including high crystallinity, aspect ratio, distribution density, height uniformity, adhesion on a substrate, low outgassing rate during electron emission in vacuum, etc. In particular, adhesion of emitters on the substrate is one of the most important parameters to be secured for high current field emission from CNTs. So, we attempted a novel approach to improve the adhesion of CNT emitters by incorporating metal oxide layers between CNT emitters. In our previous study, CNT emitters were fabricated on a metal mesh by filtrating the aqueous suspensions containing both highly crystalline thin multiwalled CNTs and thick entangled multiwalled CNTs. However, the adhesion of CNT film was not enough to produce a high emission current for an extended period of time even after adopting the metal mesh as a fixing substrate of the CNT film. While a high current was emitted, some part of the film was shown to delaminate. In order to strengthen the CNT networks, cobalt-nickel oxides were incorporated into the film. After coating the oxide layer, the CNT tips seemed to be more strongly adhered on the CNT bush. Without the oxide layer, the field emission voltage-current curve moved fast to a high voltage side as increasing the number of voltage sweeps. With the cobalt-nickel oxide incorporated, however, the curve does not move after the second voltage sweep. Such improvement of emission properties seemed to be attributed to stronger adhesion of the CNT film which was imparted by the cobalt-nickel oxide layer between CNT networks. Observed after field emission for an extended period of time, the CNT film with the oxide layer showed less damage on the surface caused by high current emission.

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전계방출광원용 카본나노파이버 에미터 연구 (Study on Carbon Nano Fiber Emitter for Field Emission Lamp)

  • 김광복;이선희;유승호;김대준;김용원
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2008년도 춘계학술대회 논문집
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    • pp.21-24
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    • 2008
  • Properties of carbon nano fiber (CNF) as field emitters were described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD). Field emitters mixed with organic binders, conductive materials and were prepared by screen-printing process. In order to increase field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as 2.1 $V/{\mu}m$ and current density was as large as 0.15 $mA/cm^2$ of 4.2 $V/{\mu}m$ with electric field. Through the results. we propose that CNFs are suitable for application of electron emitters in Field Emission Devices.

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원추형 기판 위에 탄소 나노튜브의 선택적 성장이 전계방출 특성에 미치는 영향 (Effects of Selective Growth on Electron-emission Properties of Conical-type Carbon Nanotube Field-emitters)

  • 김부종;노영록;박진석
    • 반도체디스플레이기술학회지
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    • 제11권1호
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    • pp.61-65
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    • 2012
  • In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

Semiconductor Nanowires;Their Emission Stability and Energy Distribution

  • Yu, Se-Gi;Yi, Whi-Kun;Lee, Sang-Hyun;Heo, Jung-Na;Jeong, Tae-Won;Lee, Jeong-Hee;Lee, Soo-Chang;Kim, J.M.;Lee, Cheol-Jin;Lyu, Seung-Chul;Han, Jae-Hee;Yoo, Ji-Beom
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.1028-1031
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    • 2002
  • Ga-based semiconductor nanowires (GaN, GaP) were synthesized by the reaction of Ga metal and GaN/GaP powder with a $NH_3/Ar$ gas using thermal chemical vapor deposition. The field emission and emission stability under oxygen and argon environments were investigated. Field emission energy distributions of electrons from these nanowires revealed that field emission mechanism of the semiconductor nanowires were different from carbon nanotubes.

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Fabrication of high-performance carbon nanotube field emitter using Thermal Chemical Vapor Deposition

  • Yu, Wan-Jun;Cho, You-suk;Park, Gyuseok;Kim, D.J.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.43-43
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    • 2003
  • Carbon nanotubes(CNTs) have many application points, which are field emission devices, composites, hydrogen storage, nanodevices, supercapacitor and secondary battery. The most promising application point is emitter tip mays of field emission devices. Furthermore, it may be also useful as a vacuum device for high frequency and high power. But, there are some obstacles to fabricate carbon nanotube field emission device. One is that CNTs grown by CVD method has weak adhesion with substrate and the other is non-uniform length of them. These problems are very crucial in aging property and reliability of device in the field emission.

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레이저 증착법에 의한 탄소계 박막의 구조 및 전계방출특성 (Deposition of Carbon Thin Film using Laser Ablation and Its Field Emission Properties)

  • 류정탁;;김연보
    • 한국전기전자재료학회논문지
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    • 제15권7호
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    • pp.634-639
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    • 2002
  • Using laser ablation technique carbon thin films were deposited on Si(100) substrate as a function of substrate temperature. In this study, the surface morphologic, structural and field emission properties of these carbon thin films were investigated using Raman spectroscopy, scanning electron microscopy, and a diode technique, respectively. With increasing of the substrate temperature, the surface morphologies were changed significantly. Moreover, the intensity of D-band and the full width at half maximum of these bands were dependent on substrate temperatures. As the substrate temperature was increased, the field emission properties were improved. As the result, we find that the field emission properties of the films were changed significantly with the substrate temperature and structural features of carbon than films.

Field Emission from Single-Walled Carbon Nanotubes Aligned on a Gold Plate using Self-Assembly Monolayer

  • Lee, Ok-Joo;Jeong, Soo-Hwan;Lee, Kun-Hong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.305-308
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    • 2002
  • Field emission from single-walled carbon nanotubes (SWNTs) aligned on a patterned gold surface is reported. The SWNTs emitters were prepared at room temperature by a self-assembly monolayer technique. SWNTs were cut into sub-micron length by sonication in an acidic solution. Cut SWNTs were attached on the gold surface by the reaction between the thiol groups and the gold surface. The field emission measurement showed that the turn-on field was 4.8 $V/{\mu}m$ at the emission current density of 10 ${\mu}A/cm^2$. The current density was 0.5 $mA/cm^2$ at 6.6 $V/{\mu}m$. This approach provides a novel route for fabricating CNT-based field emission displays.

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RF 마그네트론 스퍼터링법으로 성장된 Amorphous carbon 각막의 전계전자방출 (Field Electron Emission from Amorphous Carbon Thin Film Grown Using Rf Magnetron Sputtering Method)

  • 김연보;류정탁
    • 한국전기전자재료학회논문지
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    • 제14권3호
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    • pp.234-240
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    • 2001
  • Using RF magnetron sputtering, amorphous carbon(a-C) thin films as electron filed emitter were fabricated. these a-C thin films were deposited on Si(001) substrate at several temperatures. The field electron emission property of these a-C thin films was estimated by a diode technique. As the result, we observed that the field emission properties of the films were changed singnificantly with the substrate temperature and structural features of a-C film. The field emission properties were promoted by higher substrate temperatures. Furthermore N-doped a-C film exhibits more field emission property than that of undoped a-C film. These results are explained as change of surface morphology and structural properties of a-C film.

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