• 한국전기전자재료학회논문지
• /
• 제30권7호
• /
• pp.432-436
• /
• 2017

IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.

• 한국전기전자재료학회논문지
• /
• 제30권7호
• /
• pp.437-440
• /
• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• 한국전기전자재료학회논문지
• /
• 제25권6호
• /
• pp.414-419
• /
• 2012

In this paper, the properties of SnZnO films obtained from solution process with different component fractions were compared. The thermal behavior of the SnZnO solutions showed only a slight change according to the component fraction change. However, the definite changes were revealed at the structural properties of the SnZnO films. With diverse analyses, the origin of the changes was proved to the influence of phase change from $SnO_2$ to ZnO in SnZnO lattice. With the $SnO_2$-phase-dominant SnZnO, the highest field effect mobility and on/off ratio of about 8.6 $cm^2/Vs$ and $2{\times}10^8$ were achieved, respectively.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.287.1-287.1
• /
• 2014

본 연구에서는 현재 디스플레이에서 가장 널리 이용되는 저온 polycrystalline silicon (poly-Si)의 결정화 방법에 따른 thin-film transistor (TFT)의 전기적 특성을 분석하였다. 분석에 이용된 결정화 방식은 Excimer Laser Annealing (ELA)와 Metal Induced Crystallization (MIC)이다. ELA와 MIC TFTs의 전기적 특성 측정을 통한 분석결과 ELA와 MIC poly-Si TFTs의 전기적 특성 [field-effect mobility (${\mu}_{FE}$), on/off current ratio ($I_{ON}/I_{OFF}$), sub-threshold swing (SS)]은 큰 차이는 없지만, ELA를 이용한 poly-Si TFT의 전기적 특성이 조금 우수하다. 하지만, MIC poly-Si TFT의 경우 threshold voltage ($V_{TH}$)가 0V에 보다 가까울 뿐만 아니라, 전기적 스트레스를 통한 신뢰성 확인 시 ELA poly-Si TFT보다 조금 더 안정적이다. 이는 ELA의 경우 좁은 면에 선형 레이저 빔으로 조사하면서 생기는 hill-lock의 영향으로 표면이 거칠고 균일하지 못하여 바이어스 인가시 생기는 문제이다. 또한 MIC는 금속 촉매를 이용해 결정립 경계를 확장하고 결정 크기를 키워 대면적화에 유리하다. Thermal Stress에서는 (from 293K to 373K) TFT에 점차 높은 온도를 가하자 MIC poly-Si TFT의 경우 off 상태에서 누설 전류 값이 증가하며 열에 민감한 반응을 보이는 것을 확인하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.233-233
• /
• 2014

InGaZnO 박막트랜지스터(TFT)는 기존의 널리 사용되던 비정질 실리콘보다 높은 전하이동도와 Ion/off, 우수한 균일성과 신뢰성의 장점으로 최근 AMOLED양산에 적용되기 시작 하였다. 그러나 60인치 이상의 대면적 디스플레이와 초고해상도의 성능을 동시에 만족하기 위해 10 cm2/Vs정도의 전하이동도를 가지는 InGaZnO로는 한계가 있어 30 cm2/Vs 이상의 전하이동도를 가지는 물질의 연구가 필요하다. 연구에서는 높은 전하이동도를 만족하기 위해 InO2를, 우수한 신뢰성을 가지는 SnO2를 포함하는 InZnSnO로 실험을 진행하였다. 스퍼터링 시스템에서 ITO 타겟과 ZTO 타겟을 사용하여 동시증착법으로 채널을 증착하였고, 산소 분압 변화시에 IZTO TFT 소자 특성의 의존성을 평가하였다. Ar : O2=10 : 0 일 때와 Ar : O2=7 : 3 일 때의 이동도가 각각 12.6cm2/Vs, 19.7cm2/Vs로 산소 비율이 증가함에 따라 전하이동도가 증가하였다. 기존 IGZO 산화물 반도체에서는 산소 비율이 증가하면 산소공공(VO) 농도감소로 인해 전하이동도가 감소한다. 이는 전하농도가 증가하면 전하이동도가 증가하는 percolation 전도기구로 이해할 수 있다. 그러나 본 IZTO 물질에서는 산소비율 증가에 따라 오히려 전하이동도가 증가하였는데, 이는 IZTO 반도체에 함유된 Sn 이온의 가전자상태가 +2/+4가의 상대적 비율이 산소농도에 따라 의존하기 때문인 것으로 분석되었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.185-190
• /
• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권1호
• /
• pp.1-11
• /
• 1999

Hyrdogenated amorphous silicon thin film transistors are used as a pixel switching device of TFT-LCDs and very active research works on a-Si:H TFTs are in progress. Further development of the technology based on a-Si:H TFTs depends on the increased understanding of the device physics and the ability to accurately simulate the characteristics of them. A two-dimensional device simulator based on the realistic and flexible physical models can guide the device designs and their optimizations. A non-uniform finite-difference TFT Simulation Program, TFT2DS has been developed to solve the electronic transport equations for a-Si:H TFTs. In TFT2DS, many of the simplifying assumptions are removed. The developed simulator was used to calculate the transfer and output characteristics of a-Si:H TFTs. The measured data were compared with the simulated ones for verifying the validity of TFT2DS. Also the transient behaviors of a-Si:H TFTs were calculated even if the values of the related parameters are not accurately specified.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.116-116
• /
• 2011

오늘날 표시장치는 경량, 고밀도, 고해상도 대면적화의 요구에 의해 TFT-LCD의 발전이 이루어졌다. TFT에는 반도체 재료로서, Poly-Si을 사용하는 Poly-Si TFT와 a-Si:H를 이용하는 a-Si;H TFT가 있는데 a-Si는 $350^{\circ}C$ 이하의 저온으로 제작이 가능하여 많이 사용되고 있다. 이러한 방향에 맞추어 bottom gate 구조의 a-Si TFT 실험을 진행하였다. P-type silicon substrate ($0.01{\sim}0.02{\Omega}-cm$)에 gate insulator 층인 SiNx (SiH4 : NH3 = 6:60)를 200nm 증착하였다. 그리고 그 위에 active layer 층인 a-Si (SiH4 : H2 : He =2.6 : 10 : 100)을 다른 RF power를 적용하여 100 nm 증착하였다. 그 위에 Source와 Drain 층은 Al 120 nm를 evaporator로 증착하였다. active layer, gate insulator 층은 ICP-CVD 장비를 이용하여 증착하였으며, 공정온도는 $300^{\circ}C$ 로 고정하였다. active layer층 증착시 RF power는 100W, 300W, 500W, 600W로 가변하였고, width/length는 100 um/8um로 고정하였다. 증착한 a-Si layer층을 Raman spectroscope, SEM 측정 하였으며, TFT 제작 후, VG-ID, VD-ID 측정을 통해 전기적 특성인 Threshold voltage, Subthreshold swing, Field effect mobility, ON/OFF current ratio를 비교해 보았다.

• 한국전기전자재료학회논문지
• /
• 제15권2호
• /
• pp.110-118
• /
• 2002

Organic thin film transitors(OTFT) are of interest for use in broad area electronic applications. And recently organic electroluminescent devices(OELD) have been intensively investigated for using in full-color flat-panel display. We have fabricated inverted-staggered structure OTFTs at lower temperature using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active eletronic material and photoacryl as the organic gate insulator. The field effect mobility is 0.039∼0.17 ㎠/Vs, on-off current ratio is 10$\^$6/, and threshold voltage is -7V. And here we report the study of driving emitting, Ir(ppy)$_3$, phosphorescent OELD with all organic thin film transistor and investigated its electrical characteristics. The OELD with a structure of ITO/TPD/8% Ir(ooy)$_3$ doped in BCP/BCP/Alq$_3$/Li:Al/Al and OTFT with a structure of inverted-stagged Al(gate electrode)/photoacry(gate insulator)/pentacene(p-type organic semiconductor)/ Au(source-drain electrode) were fabricated on the ITP patterned glass substrate. The electrical characteristics are turn-on voltage of -10V, and maximum luminance of about 90 cd/㎡. Device characteristics were quite different with that of only OELD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1996년도 추계학술대회 논문집
• /
• pp.207-213
• /
• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).