• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.126-132
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• 2017

The power conversion efficiency of organic polymer solar cells was enhanced by introducing a ferroelectric polymer layer at the interface between active layer and metal electrode. The power conversion efficiency was increased by 50% through the enhancement of the open circuit voltage. To investigate the role of the ferroelectric layer on the dissociation process of the excitons, non-radiative portion of the exciton decay was directly measured by using photoacoustic technique. The results show that the ferroelectric nature of the buffer layer does not play any roles on the dissociation process of the excitons, which indicates the efficiency enhancement is not due to the ferroelectricity of the buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.97-103
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• 2014

Phase transition properties of the copolymer films of polyvinylidene fluoride (PVDF) and trifluoroethylene(TrFE), P(VDF-TrFE), were studied with X-ray diffraction (XRD) and polarization modulated ellipsometry (PME). XRD studies on both Langmuir-Blodgett (LB) films and spin coated films exhibit conversions from ferroelectric phase to paraelectric phase at $108{\pm}2^{\circ}C$ on heating and paraelectric phase to ferroelectric phase at $78{\pm}2^{\circ}C$ on cooling. The presence of the ferroelectric-paraelectric phase transition is also confirmed by the PME technique for the first time in this study. PME was proved to be a very sensitive tool in the measurement of the structural changes at the nano-thickness films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.509-512
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• 1999

Ferroelectric Sr$_2$(Nb, Ta)$_2$O$_{7}$(SNTO), La$_2$Ti$_2$O$_{7}$(LTO) thin films were prepared by sol-gel processes. SNTO, LTO thin films were spin-coated on Pt/TiO$_2$/SiO$_2$/Si(100). Pt/Ti/SiO$_2$/Si(100). PT/ZrO$_2$/SiO$_2$/Si(100) substrates. After multiple coating, dried thin films were heat-treated for decomposition of residual organics and crystallization. Dielectric and other relevant electrical properties were measured and the results showed a little possibility in ferroelectric gate random access memory devices.ces.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.174-174
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• 2008

Non-volatile memories using ferroelectric-gate field-effect transistors (Fe-FETs) with a metal/ferroelectric/semiconductor gate stack (MFS-FETs) make non-destructive read operation possible. In addition, they also have features such as high switching speed, non-volatility, radiation tolerance, and high density. However, the interface reaction between ferroelectric materials and Si substrates, i.e. generation of mobile ions and short retention, make it difficult to obtain a good ferroelectric/Si interface in an MFS-FET's gate. To overcome these difficulties, Fe-FETs with a metal/ferroelectric/insulator/semiconductor gate stack (MFIS-FETs) have been proposed, where insulator as a buffer layer is inserted between ferroelectric materials and Si substrates. We prepared $SrBi_2Ta_2O_9$ (SBT) film as a ferroelectric layer and $LaZrO_x$ (LZO) film as a buffer layer on p-type (100) silicon wafer for making the MFIS-FET devices. For definition of source and drain region, phosphosilicate glass (PSG) thin film was used as a doping source of phosphorus (P). Ultimately, the n-channel ferroelectric-gate FET using the SBT/LZO/Si Structure is fabricated. To examine the ferroelectric effect of the fabricated Fe-FETs, drain current ($I_d$) versus gate voltage ($V_g$) characteristics in logarithmic scale was measured. Also, drain current ($I_d$) versus drain voltage ($V_d$) characteristics of the fabricated SBT/LZO/Si MFIS-FETs was measured according to the gate voltage variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.87-90
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• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.17-20
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• 1999

The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.6
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• pp.523-546
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• 2022

Morphotropic phase boundary (MPB), which is a special boundary that separates two or multiple different phases in the phase diagram of some ferroelectric ceramics, is an important concept in identifying physics that includes piezoelectric responses. MPB, which had not been discovered in organic materials until recently, was discovered in poly(vinylidene fluoride-co-trifluoroethylene (P(VDF-TrFE)), resulting from a molecular approach. The piezoelectric coefficient of P(VDF-TrFE) in this MPB region was achieved up to -63.5 pC N^-1, which is about two times as large as the conventional value of -30 pC N^-1 of P(VDF-TrFE). An order-disorder arrangement greatly affects the rise of the piezoelectric effect and the ferroelectric, paraelectric and relaxor ferroelectric of P(VDF-TrFE), so the arrangement and shape of the polymer chain is important. In this review, we investigate the origin of negative longitudinal piezoelectric coefficients of piezoelectric polymers, which is definitely opposite to those of common piezoelectric ceramics. In addition to the mainly discussed issue about MPB behaviors of ferroelectric polymers, we also introduce the consideration about polymer chirality resulting in relaxor ferroelectric properties. When the physics of ferroelectric polymers is unveiled, we can improve the piezoelectric and pyroelectric properties of ferroelectric polymers and contribute to the development of next-generation sensor, energy, transducer and actuator applications.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.138-144
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• 2003

A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.107-108
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• 2005

In this paper, we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity of electrode/ferroelectric film interface. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Their dependence on slurry composition was also investigated. We expect that our results will be useful promise of global planarization for ferroelectric random access memories (FRAM) application in the near future.