• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.60-65
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• 2014

This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate ($KNO_3$) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate ($KNO_3$) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square - wave bipolar signals across a resistance of $0.1k{\Omega}$ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of $KNO_3$ at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.391-395
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• 2007

MgO enhanced $(Ba_{0.6}Sr_{0.4})$ $TiO_3$ thick films have been fabricated by a tape casting and firing method for tunable devices on the microwave frequency band. In order to improve ferroelectric properties, the composite thick films enhanced with MgO on BST have been asymmetrically annealed by a focused halogen beam method. Dielectric constants of composite thick films are changed from 1050 to 1300 at 100 kHz after 60 s and 150 s annealing by the focused halogen beam. Even though no prominent changes were previously observed from the thick films before and after annealing in terms of chemical composition and surface morphology, it is clear that the average particle size of the thick films calculated by Scherrer's formula were increased by annealing. Furthermore, a strong correlation between particle size and dielectric constant of the composite thick films has been observed; dielectric constant increases with increased particle size. This has been attributed to the increased volume of ferroelectric domain due to increased particle sizes. As a result, the tuning range was improved by halogen beam annealing.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1229-1232
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• 2004

The ratio of optimized concentration on optical characteristics for phase-separated composite organic films (PSCOF) liquid crystal display is 30% of pre-polymer (NOA65) and 70% of ferroelectric liquid crystal (Felix). The layer structure in ferroelectric liquid crystal cell made by 30% NOA65 and 70% Felix materials is tilt-bookshelf layer structure. The angle of tilt-bookshelf structure are 17$^{\circ}$, 12$^{\circ}$ which are almost same of tilt angle of ferroelectric liquid crystal in Sm $C^{\ast}$ phase. We know that this result is from compensating the layer buckling. In this paper, we will discuss the effect of layer structure in PSCOF cell on ratio of concentration between pre-polymer and liquid crystal by x-ray measurements. We believe that technology of PSCOF is a good solution to solve the problems of align-defect and mechanical shock for future TV application and plastic LCD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.455-458
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• 2001

The thin films of high pemitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)$TiO_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/$SiO_2/Si$ substrate at 4,000 [rpm] for 10 seconds. The devices of BST thin films to composite $(Ba_{0.7},Sr_{0.3})TiO_3$ were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_2/Si$ substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$, $3800[\AA]$. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency l[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.455-458
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin films as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Ti/SiO$_2$/Si substrate at 4,700 [rpm] for 10 seconds. The devices of BST thin films to composite (Ba$\_$0.7/Sr$\_$0.3/)TiO$_3$ were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.910-913
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• 2002

We have achieved an improved stability of an analog electro-optic effect in FLC/polymer composite films. The optimization of device depends on both the composition of the FLC/polymer mixture and the energy of UV irradiation. This device exhibits continuous gray scales and the mechanical stability against external forces.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.107-110
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• 2002

The optical memory devices of BST thin films to composite $(Ba_{0.7}\;Sr_{0.3})TiO_{3}$ using sol-gel method were fabricated by changing of the depositing layer number on $Pt/Ti/SiO_{2}/Si$ substrate. The structural properties of optical memory devices to be ferroelectric was investigated by fractal analysis and 3-dimension image processing. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was $2500[\AA]$, $3500[\AA]$ and $3800[\AA]$. BST thin films exhibited the most pronounced grain growth. The surface morphology image was roughness with coating numbers. The thin films increasing with coating numbers shows a more textured and complex configuration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.377-380
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• 2001

The BST thin films to composite (Ba$\sub$x/Sr$\sub$l-x/)TiO$_3$ using sol-gel method were fabricated on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric materials was investigated by structural and electrical properties. BST solution was composited by moi ratio, and then spin-coated (from 3 times to 5 times coating on Pt/SiO$_2$/Si substrate. Thickness of BST ceramics thin films are about 2600∼2800[${\AA}$] in 3 times deposition. The property of leakage current was stable when the applied voltage was 3[V]. Leakage current of 3 times coated BST thin film was 10$\^$-9/∼10$\^$-11/[A] at 0∼3[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.660-663
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• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.171-176
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• 1994

The spin-casted PLZT(9/65/35) thin films through polymeric sol-gel process were prepared on Pt substrate. The crack-free, uniform and dense films were obtained by post-annealing at the temperature between 35$0^{\circ}C$ and $700^{\circ}C$. The composite structure mixed together with large grains called "rosette" and surrounding small grains were observed on the films annealed over $600^{\circ}C$. Pyrochlore phase was completely changed to perovskite phase above $600^{\circ}C$ with the increase of annealing temperature. Dielectric constant (k) was larger with the increase of film thickness and annealing temperature. from the measurements of dielectric constant as a function of measuring temperature, it was also observed that Curie temperature was shifted to higher temperature with the increase of film thickness and annealing temperature. The pyroelectric coefficient(P) of 10 times coated film annealed at $700^{\circ}C$ was 65 $\mu$C/$\textrm{cm}^2$.K.$.K.