• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.29.2-29.2
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• 2011

B-site substitution with isovalent and donor impurities was compared in terms of the piezoelectric properties of Bi-based ABO3 perovskite ceramics. X-ray diffraction study revealed that both impurities bring about degradation in their ferroelectric properties as well as piezoelectric characteristics. However, there existed a difference between the isovalent and heterovalent impurities that influence a phase transformation of ferroelectric anisotropic-to-electrostrictive pseudocubic symmetry. Based upon analyses including the crystal, microstructure, dielectric, ferroelectric properties, we believed that A-site vacancies in the ABO3 ceramic significantly contribute to a ferroelectric-nonpolar phase transition, which give rise to lead to a giant strains. The present paper will discuss the origin of giant strains in Bi-based perovskite ceramics.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.6
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• pp.138-144
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• 2003

A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.286-291
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• 1998

Dielectric properties of $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$, ceramics prepared by the columbite precursor method have been investigated as a function of the sintering temperature in the range of 1000∼$1250^{\circ}C$. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ ceramics show typical relaxor ferroelectric behavior. As the sintering temperature increased, the dielectric constant increased and the phase transition temperature shifted to lower temperature. The TCK(temperature coefficient of dielectric constant) and VRK (variation rate of dielectric constant) increased with increasing sintering temperature. The $Pb(Mg_{1/3}Nb_{2/3})O_{3}-PbTiO_{3}$ compositions sintered at $1250^{\circ}C$ appear to be suitable for ferroelectric bolometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.9
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• pp.783-787
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• 2002

In recent year, B $i_{4-}$x L $a_{x}$ $Ti_3$ $O_{12(BLT)}$ is one of promising substitute materials for the ferroelectric random access memory(FRAM) applications. But the systematic composition is still insufficient, so this experiment was carried out in ceramic ambient sintering process which has the very excellent ferroelectric property. Samples were prepared by a bulk and the purpose which was estimated with a suitability of thin films applications. The density of B $i_{3.75}$ L $a_{0.25}$ $Ti_3$ $O_{12}$ was high and the XRD pattern showed that the intensity of main peak (117) was increased at the argon ambient sintering. Controlling the quantity of oxygen, crystallization showed a thin, long plate like type, and we obtained the excellent dielectric and polarization properties at the argon atmosphere sintering. Also this sintering process was effective at the bulk sample. Argon ambient sintered sample produced higher permittivity of 154, the remanent polarization(2Pr) of 6.8 uC/$\textrm{cm}^2$ compared with that sintered in air and oxygen ambient. And this sintering process showed a possibility which could be applied to thin films process..

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.87-90
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• 2002

In recent year, BLT($Bi_{3.25}La_{0.75}Ti_{3}O_{12}$) has been one of promising substitute materials at the ferroelectric random access memory applications. We manufactured $Bi_{3.25}La_{0.75}Ti_3O_{12}$ Target with a ceramic process. The BLT target was sintered at ${1100^{\circ}C}$ for 4 hours. Using RF magnetron sputtering, a deposited BLT thin films were estimated about ferroelectric properly as a functions of post annealing temperatures. The BLT thin films showed a promoted ferroelectric characteristics at the post annealied sample of ${700^{\circ}C}$. This sample exhibited the (117) preferred crystal orientation, current density of $3{\times}10^{-8}A/cm^2$, a remanent polarization of $8{\mu}C/cm^2$ and a coercive field of 42.1 KV/cm respectively.

• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.178-183
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• 2016

Ferroelectric relaxor ceramics with $BaTiO_3-NaNbO_3-Bi(Mg_{1/2}Ti_{1/2})O_3$ ternary compositions (BT-NN-BMT) have been prepared by sol-gel powder synthesis and consequent bulk ceramic processing. Through the modified chemical approach, fine and single-phase complex perovskite compositions were successfully obtained. Temperature and frequency dependent dielectric properties indicated typical relaxor characteristics of the BT-NN-BMT compositions. The ferroelectric-paraelectric phase transition became diffusive when NN and BMT were added to form BT based solid solutions. BMT additions to the BT-NN solid solutions affected the high temperature dielectric properties, which might be attributable to the compositional inhomogeneity of the complex perovskite and resulting weak dielectric coupling of the Bi-containing polar nanoregions (PNRs). The temperature stability of the dielectric properties was good enough to satisfy the X9R specification. The quasi-linear P-E response and the temperature- stable dielectric properties imply the high potential of this ceramic compound for use in high temperature capacitors.

• Journal of the Korean Ceramic Society
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• v.35 no.9
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.263-267
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• 2008

$(Bi_{1/2}Na_{1/2})TiO_3$-based ceramics have been intensively studied as lead-free piezoelectric ceramics. In this study, the piezoelectric properties and phase transition behaviors of BNT based solid solution $(Bi_{0.5}Na_{0.5})_{1-x}Ca_xTiO_3$ ($X=0.01{\sim}0.25$) were investigated. The morphotropic phase boundary(MPB) zone which BNT is transformed from rhombohedral to cubic structure was appeared by adding $CaTiO_3$ with 0.12 mol by the measurement of permittivity and X-ray diffraction. The behavior which ferroelectric BNT with adding $CaTiO_3$ was changed to antiferroelectric and paraelectric state was confirmed by the measurement ofhysterisis loop and depolarization temperature as a function of temperature. As $CaTiO_3$ concentration was increased, the phase transition temperature was decreased. The piezoelectric properties were highest at 0.01 mol of $CaTiO_3$ concentration. The electromechanical coupling factor($K_t$) and mechanical quality factor($Q_m$) were 42% and 254, respectively.

• Journal of the Korean Ceramic Society
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• v.39 no.1
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• pp.92-98
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• 2002

To investigate the electrode structural effect on the ferroelectric electron emission, the electric field distribution in a 2-dimensional structure was calculated as a function of upper electrode diameter, and the switching charge density and emission charge were measured simultaneously. The simulation of the electric field distribution showed that an asymmetric electrode structure could cause a stray field on the bare surface of the ferroelectric cathode near the edge of upper electrode. The distance of stray field from the electrode edge increased with increasing ferroelectric thickness, but it did not depend on the upper electrode diameter. The switching charge density increased more on the cathode with smaller upper electrode diameter. This was attributed to the stray field on the bare ferroelectric surface near the electrode edge, because the stray field for the asymmetric ferroelectric cathode enhanced polarization switching near the electrode edge. From the switching charge density, the distance of stray field from the electrode edge was calculated as about 11-14${\mu}{\textrm}{m}$. The threshold voltage of electron emission was 61-68 kV/cm, which was almost 3 times lager than the coercive voltage. The threshold voltage was not determined just by coercive voltage, but by strength and distance of the stray-field, which largely depended on the geometrical structure of ferroelectric cathode.