• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.418-425
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• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.

• Bulletin of the Korean Chemical Society
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• 제20권3호
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• pp.281-284
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• 1999

Two La1.82Ca1.18Cu2O6+δ (2126) compounds exhibited different properties depending upon how they were synthesized. The compound prepared under high oxygen pressure showed superconductivity. But the compound prepared under low oxygen pressure did not exhibit superconductivity, and showed a metal-insulator transition. Our study on these compounds shows that a small amount of additional oxygen intercalated into the superconducting phase plays an important role for superconductivity. The Fermi surface of non-superconducting 2126 compound possesses nesting phenomena, which is the reason for the M-1 transition. On the other hand, the superconducting 2126 compound does not show Fermi surface nesting. This is because the additional oxygen removes some electrons from Cu d-orbitals, thereby bradking the Fermi surface nesting.

• 한국진공학회지
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• 제1권1호
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• pp.83-87
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• 1992

최근 Angle Resolved Ultraviolet Photoemission Spectroscopy(ARUPS)를 통하여 Mo(011)과 W(011)의 surface Fermi contour에 관한 연구가 발표되었다. Hydrogen 흡착시 W(011)의 electron contour는 팽창하였다. 이것은 electron contour를 이루는 surface state가 hydrogen 흡착시 higher binding energy로 이동한 결과이다. Surface state의 higher binding energy로의 이동은 결국 band flattening으로 이해되며, 이 band flattening 에 S.E.Trullinger의 long range dipole dipole force와 Kohn anomaly 현상을 부합시켜 W(011) surface에 수소 흡착시 일어나는 reconstruction 현상에 대한 설명을 시도해 보았다.

• Bulletin of the Korean Chemical Society
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• 제27권3호
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.24-24
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• 2003

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.163.1-163.1
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• 2014

Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

• Progress in Superconductivity
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• 제14권1호
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• pp.11-16
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• 2012

본 연구에서는 자체일관적인 DFT+DMFT 계산을 통해 철의 3d 전자의 상관관계가 LiFeAs와 NaFeAs의 전자구조와 페르미 면 겹싸기 등에 미치는 영향을 알아보았다. 이들은 모두 철계 초전도체의 초전도성 형성에 매우 중요한 역할을 가지고 있다. DFT+DMFT 계산에서 얻어진 LiFeAs의 스펙트럼은, DFT에서 얻어진 띠 구조에 비해 매우 약한 페르미 면 겹싸기 현상을 보이며, NaFeAs 의 경우 DMFT 에서도 페르미 면 겹싸기 현상이 어느 정도 남아있는 것을 확인하였다. 그리고 이는 실험에서 보고된 ARPES 결과와 일치함을 확인했다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• Bulletin of the Korean Chemical Society
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• 제28권8호
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Bulletin of the Korean Chemical Society
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• 제34권3호
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• pp.912-916
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• 2013

The electronic structure of LaFeAsO was analyzed by tight-binding band calculation based upon the normal and shrunk lattices. A strong Fermi surface nesting was found in the normal LaFeAsO, while most of the nesting area was disappeared in the shrunk LaFeAsO. It was found, therefore, high pressure atmosphere is required to become a superconductor for LaFeAsO by suppressing the SDW (spin density wave) state through the disappearance of the Fermi surface nesting.