• Electrical & Electronic Materials
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• v.8 no.4
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• pp.418-425
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• 1995

The surface of GaAs was treated by using the 0.1M solution of N $a_{2}$S.9 $H_{2}$O. The passivation of the surface in this sample was investigated by the photoreflectance(PR) experiment. The surface electric field( $E_{s}$) and built-in voltage( $V_{bi}$ ) discussed from Franz-Keldysh oscillation of PR signals. The density of surface states and Fermi level of GaAs treated with N $a_{2}$S.9 $H_{2}$O for 40min were determined 1.61*10$^{12}$ c $m^{-2}$ and 0.73eV. These values were about 15 and 10% smaller than those in untreated sample.e.

• Bulletin of the Korean Chemical Society
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• v.20 no.3
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• pp.281-284
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• 1999

Two La1.82Ca1.18Cu2O6+δ (2126) compounds exhibited different properties depending upon how they were synthesized. The compound prepared under high oxygen pressure showed superconductivity. But the compound prepared under low oxygen pressure did not exhibit superconductivity, and showed a metal-insulator transition. Our study on these compounds shows that a small amount of additional oxygen intercalated into the superconducting phase plays an important role for superconductivity. The Fermi surface of non-superconducting 2126 compound possesses nesting phenomena, which is the reason for the M-1 transition. On the other hand, the superconducting 2126 compound does not show Fermi surface nesting. This is because the additional oxygen removes some electrons from Cu d-orbitals, thereby bradking the Fermi surface nesting.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.83-87
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• 1992

Rencently, angle-resolved ultraviolet photoemission measurements of the Fermi surface contours for Mo(011) and W(011) are reported. The electron contour of W(011) is expanded upon hydrogen adsorption, which implies that the surface states consisting of electron pockets are shifted to higher binding energy. This phenomena can be explained by the band flattening. We explained here the reconstruction of W(011) surface induced by adsorption of hydrogen in terms of band flattening of surface states with a combination of S. E. Trullinger long range dipole-dipole interaction force and Kohn anomaly.

• Bulletin of the Korean Chemical Society
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• v.27 no.3
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• pp.363-367
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• 2006

The structure-property relations of ternary copper chalcogenides, $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ are examined. The density of states, band dispersions, and Fermi surfaces of these compounds are investigated to verify the reason of the metal-insulator transitions by extended Huckel tight-binding band calculations. The origin of the metalinsulator transitions of non-stoichiometric $TlCu_{3-x}S_2$ and $\alpha-BaCu_{2-x}S_2$ is thought to be the electronic instability induced by their Fermi surface nesting.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.24-24
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.163.1-163.1
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• 2014

Electron-electron interactions bear important information on fundamental electronic properties such as electron effective mass, conductivity, and charge mobility. By using angle-resolved photoemission spectroscopy, here we address unusual electron self-energy in graphene induced by the electron-electron interactions, which are distinguished from those of an ordinary Fermi liquid. Our findings provide a new route for two-dimensional electron systems toward device applications.

• Progress in Superconductivity
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• v.14 no.1
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• pp.11-16
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• 2012

Based on fully self-consistent dynamical mean field theory (DMFT) method, we investigate electronic structure and Fermi surface nesting property of LiFeAs and NaFeAs, focusing on the correlation effect of iron 3d orbital. For LiFeAs, good nesting property by density functional theory (DFT) method is much suppressed by DFT+DMFT method due to the orbital-dependent renormalization magnitude. NaFeAs shows a similar behavior, but a better nesting is obtained than LiFeAs from DFT+DMFT Fermi surfaces. Our result is consistent with the observed superconducting (spin density wave) ground state of LiFeAs (NaFeAs).

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.290.2-290.2
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• 2016

Recently, organic thin-film transistors have been widely researched for organic light-emitting diode panels, memory devices, logic circuits for flexible display because of its virtue of mechanical flexibility, low fabrication cost, low process temperature, and large area production. In order to achieve high performance OTFTs, increase in accumulation carrier mobility is a critical factor. Post-fabrication thermal annealing process has been known as one of the methods to achieve this by improving the crystal quality of organic semiconductor materials In this paper, we researched the properties of pentacene films with X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) analyses as different annealing temperature in N2 ambient. Electrical characterization of the pentacene based thin film transistor was also conducted by transfer length method (TLM) with different annealing temperature in Al- and Ti-pentacene junctions to confirm the Fermi level pinning phenomenon. For Al- and Ti-pentacene junctions, is was found that as the surface quality of the pentacene films changed as annealing temperature increased, the hole-barrier height (h-BH) that were controlled by Fermi level pinning were effectively reduced.

• Bulletin of the Korean Chemical Society
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• v.28 no.8
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• pp.1341-1345
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• 2007

The surface chemistry of D2O dosed Zircaloy-4 (Zry-4) surface followed by Ar-ion bombardment and annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Ultraviolet photoelectron spectroscopy (UPS). In the XPS study, Ar-ion bombardment caused decrease of the oxygen on the surface region of Zry-4 and therefore led to change the oxidation states of the zirconium from oxide to metallic form. In addition, oxidation states of zirconium were changed to lower oxidation states of zirconium due to depopulation of oxygen on the surface region by annealing. Up to about 787 K, the bulk oxygen diffused out to the subsurface region and after this temperature, the oxygen on the surface of Zry-4 was depopulated. UPS study showed that the valence band spectrum of the D2O exposed Zry-4 exhibited a dominant peak at around 13 eV and no clear Fermi edge was detected. After stepwise Ar+ sputtering processes, the decrease of the oxygen on the surface of Zry-4 led to suppress the dominant peak around 13 eV, the peak around 9 eV and develop a new peak of the metallic Zr 4d state (20.5-21.0 eV) at the Fermi level.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.912-916
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• 2013

The electronic structure of LaFeAsO was analyzed by tight-binding band calculation based upon the normal and shrunk lattices. A strong Fermi surface nesting was found in the normal LaFeAsO, while most of the nesting area was disappeared in the shrunk LaFeAsO. It was found, therefore, high pressure atmosphere is required to become a superconductor for LaFeAsO by suppressing the SDW (spin density wave) state through the disappearance of the Fermi surface nesting.