• Title/Summary/Keyword: FeSiB

Search Result 475, Processing Time 0.025 seconds

Magnetization Switching of MTJs with CoFeSiB/Ru/CoFeSiB Free Layers (CoFeSiB/Ru/CoFeSiB 자유층을 갖는 자기터널 접합의 스위칭 자기장)

  • Lee, S.Y.;Lee, S.W.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
    • /
    • v.17 no.3
    • /
    • pp.124-127
    • /
    • 2007
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous CoFeSiB layers, were investigated. The CoFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with an emphasis given on understanding the effect of the amorphous free layer on the switching characteristics of the MTJs. CoFeSiB has a lower saturation magnetization ($M_s\;:\;560\;emu/cm^3$) and a higher anisotropy constant ($K_u\;:\;2800\;erg/cm^3$) than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003\;erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the Si/$SiO_2$/Ta 45/Ru 9.5/IrMn 10/CoFe 7/$AlO_x$/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) MTJs structure, it was found that the size dependence of the switching field originated in the lower $J_{ex}$ using the experimental and simulation results. The CoFeSiB synthetic antiferromagnet structures were proved to be beneficial for the switching characteristics such as reducing the coercivity ($H_c$) and increasing the sensitivity in micrometer size, even in submicrometer sized elements.

Magnetoresistance Effects of Magnetic Tunnel Junctions with Amorphous CoFeSiB Single and Synthetic Antiferromagnet Free Layers (비정질 CoFeSiB 단일 및 합성형 반강자성 자유층을 갖는 자기터널접합의 자기저항 효과)

  • Hwang, J.Y.;Kim, S.S.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
    • /
    • v.15 no.6
    • /
    • pp.315-319
    • /
    • 2005
  • To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.

Switching Characteristics of Magnetic Tunnel Junction with Amorphous CoFeSiB Free Layer (비정질 CoFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
    • /
    • v.16 no.6
    • /
    • pp.276-278
    • /
    • 2006
  • The switching characteristics of magnetic tunnel junctions (MTJs) comprising amorphous ferromagnetic CoFeSiB free layer have been investigated. CoFeSiB was used for the free layer to enhance the switching characteristics. The typical junction structure was $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nm)$. CoFeSiB has low saturation magnetization ($M_{s}$) of $560\;emu/cm^{3}$ and high anisotropy constant ($K_{u}$) of $2800\;erg/cm^{3}$. These properties caused low coercivity ($H_{c}$) and high sensitivity in MTJs, and it also confirmed in submicrometer-sized elements by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. By increasing CoFeSiB free layer thickness, the switching characteristics became worse due to increase of the demagnetization field.

Characteristics of Magnetic Tunnel Junctions Comprising Ferromagnetic Amorphous NiFeSiB Layers (강자성 비정질 NiFeSiB 자유층을 갖는 자기터널접합의 스위칭 특성)

  • Hwang, J.Y.;Rhee, S.R.
    • Journal of the Korean Magnetics Society
    • /
    • v.16 no.6
    • /
    • pp.279-282
    • /
    • 2006
  • Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

Phase Analysis and Magnetic Properties of $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) Powders Prepared by Mechanical Alloying (기계적합금법으로 제조된 $Fe_5Si_xB_{5-x}$ (x = 0, 1, 2, 3) 분말의 상분석 및 자기적 특성)

  • Hwang, Yeon;Kim, Taek-Soo;Lee, Hyo-Sook
    • Journal of the Korean Magnetics Society
    • /
    • v.7 no.6
    • /
    • pp.293-298
    • /
    • 1997
  • $Fe_5Si_Xb_{5-x}$ (x=0, 1, 2, 3) powders were prepared by mechanical alloying, and their phases and magnetic properties were investigated by using XRD, TEM, Mossbauer spectroscopy and VSM. Starting elements are incorporated into $\alpha$-Fe in the early stage of mechanical alloying, and the stable phases are formed as the milling proceeds. After the annealing at 80$0^{\circ}C$ for 2 hours, it is found that the FeB and $Fe_2B$ phases coexist for the $Fe_5B_5$(x=0) composition. By substituting Si for B, the formation of $Fe_2B$ phase is restricted and the $Fe_5SiB_2$, $Fe_2Si_{0.4}B_{0.6}$ and paramagnetic phase begin to appear. The FeB phase has wide range of hyperfine magnetic field because it is not fully crystallized on the annealing at 800 $^{\circ}C$. On the contrary, others have good crystalline phases and show well-defined hyperfine magnetic field. Magnetic saturation is highest for the $Fe_5B_5$ composition where the amount of the $Fe_2B$ phase in large.

  • PDF

Preparation of $\textrm{Fe}_{5}\textrm{Si}_{x}\textrm{B}_{5-x}$(x=0, 1, 2, 3) Powder by Mechanical Alloying (기계적합금법에 의한 $\textrm{Fe}_{5}\textrm{Si}_{x}\textrm{B}_{5-x}$(x=0, 1, 2, 3)분말의 제조)

  • Kim, Taek-Soo;Hwang, Yeon;Lee, Hyo-Sook
    • Korean Journal of Materials Research
    • /
    • v.8 no.2
    • /
    • pp.141-146
    • /
    • 1998
  • Ball mill을 이용하여 Ar 분위기에서 기계적 합금법으로 $Fe_{ 5}$$Si_{x}$ $B_{5-x}$ 분말을 제조하고, 제조된 분말을 연속 진공 열처리 시킨 후 Si첨가에 따른 결정구조 및 자기적성질을 조사하였다. 250시간 볼밀처리한 Fe$_{5}$ $B_{5}$ 합금에서 전체적으로 비정질 구조가 형성되었으나 일부분에 결정질이 존재하고 있었으며, $800^{\circ}C$에서 2시간 열처리하면 FeB와 $Fe_{2}$B 상이 혼재된 구조를 얻었다. 250시간 볼밀처리한 $Fe_{5}$ $Si_{2}$$B_{3}$합금에서 전체적으로 비정질 구조를 얻을 수 있었고, 이 시료를 2시간, $800^{\circ}C$로 열처리 하였을 때 $Fe_{2}$B상은 사라지고, 대부분 FeB의 균질한 상을 나타내었다. $Fe_{5}$ $B_{5}$ /조성에서는 분말 입자크기가 약 $1\mu\textrm{m}$이었으나, Si이 첨가되면 분말 입자크기가 약 $10\mu\textrm{m}$로 커졌다. Si의 첨가에 의해서 비정질상의 형성을 촉진시켜 단일 FeB상의 합성시간을 단축시킬 수 있었다.

  • PDF

Crystallization and Embrittlement of $Fe_{78}B_{13}Si_{9}$ Amorphous Alloy ($Fe_{78}B_{13}Si_{9}$ 비정질 합금의 결정화 거동과 취성 현상)

  • Son, In-Jin
    • Korean Journal of Materials Research
    • /
    • v.1 no.3
    • /
    • pp.145-150
    • /
    • 1991
  • Crystallization and embrittlement of $Fe_{78}B_{13}Si_{9}$ amorphous alloy was investigated by differential scanning calorimetry, X-ray diffraction and transmission electron microscopy. The crystallization comprizes two exothermic processes. In the first crystallization stage, $\alpha$-(Fe, Si) dendrites are formed from the amorphous state, and in the second crystallization, $Fe_2B$ compounds are formed. An abrupt decrease of the fracture strain of the ribbon started from amorphous started annealed at about $340^{\circ}C$

  • PDF

Effects of Cr, B, Ti and Si on Rolling Characteristics in Fe-30at.%A1 Alloy (Fe-30at.%A1 합금의 압연성에 미치는 Cr, B, Ti 및 Si 첨가효과)

  • Choi, Dap-Chun;Lee, Ji-Sung
    • Journal of Korea Foundry Society
    • /
    • v.23 no.2
    • /
    • pp.77-85
    • /
    • 2003
  • Some alloying elements such as Cr, B, Ti and Si were added individually or as a mixture to Fe-30 at.%Al alloys. The alloys were melted using an arc furnace and then heat-treated for homogenization at 1000$^{\circ}C$ for 7 days and followed by rolling at 1000$^{\circ}C$. The alloying elements on rolling characteristics were investigated by the microstructures and fracture mode before and after rolling. The microstructures before rolling showed that all of the alloys had equiaxed grains. On the other hand, the microstructures of rolling plane as well as its perpendicular plane became elongated after rolling. The alloys such as Fe-30Al, Fe-30Al-3Ti, Fe-30Al-0.5B, Fe-30Al-5Cr and Fe-30Al-3Ti-0.5B revealed better rolling behaviour from the point that intergranular and cleavage fractures were not fundamentally occurred. But the addition of 5Ti or 3Si to Fe-Al alloys had detrimental effects. The Ti-added alloy system such as Fe-30Al-5Ti, Fe-30Al-5Ti-5Cr, Fe-30Al-3Ti-5Cr and Fe-30Al-5Ti-0.5B were cracked through grain and showed cleavage fracture. The Si-added alloy system such as Fe-30Al-5Si, Fe-27Al-3Si and Fe-27Al-5Cr-3Si were cracked along the grain boundary and showed intergranular fracture. $DO_3{\leftrightarrow}B_2$ transition temperature of Fe-30at.%Al alloy was 520$^{\circ}C$, whereas the addition of 3Ti and 3Ti+0.5B comparably increased the temperature to 797 and 773$^{\circ}C$, respectively.

Bias Voltage Dependence of Magnetic Tunnel Junctions Comprising Double Barriers and CoFe/NiFeSiB/CoFe Free Layer (CoFe/NiFeSiB/CoFe 자유층을 갖는 이중장벽 자기터널접합의 바이어스전압 의존특성)

  • Lee, S.Y.;Rhee, J.R.
    • Journal of the Korean Magnetics Society
    • /
    • v.17 no.3
    • /
    • pp.120-123
    • /
    • 2007
  • The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.