• Membrane Journal
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• v.23 no.1
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• pp.80-91
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• 2013

Metal-templated condensation of cyclohexanedione dioxime and phenylboronic acid in the presence of Fe(II) sulfate heptahydrate proceeds cleanly in methanol to furnish the Fe(II) clathrochelate. An organic/inorganic hybrid membranes composed of Fe(II) clathrochelate and polyethersulfone was prepared by using phase inversion method. For membrane preparation, the Fe(II) clathrochelate was highly soluble (3~5 g/L) in DMF, NMP, and DMAc, which meets the requirements for the solubility of metal complexes in polar aprotic solvent used in membrane preparation. It was stable even in the presence of strong acids, such as trifluorosactic acid (pKa = 0.3). It was characterized by UV-vis spectroscopy, and their stability in solution phase studied in the presence of (i) strong acids or (ii) competing chelates. Organic/inorganic hybrid membranes were prepared with polyethersulfone, polyvinylpyrrolidone, p-toluenesulfonic acid, Fe(II) clathrochelate and DMF by using nonsolvent induced phase inversion method. The addition of Fe(II) clathrochelate leads increase of surface pore density, mean pore size and flux. We can obtain highly asymmetric membranes by addition of Fe(II) clathrochelate.

• Journal of the Korean institute of surface engineering
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• v.50 no.2
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• pp.119-124
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• 2017

Due to the high saturation magnetization (~2.4 T), $Fe_{16}N_2$ is interesting for the thin film application such as an actuator, data record storage and sensor etc. In this study, Fe-N thin films were deposited on Si(001) substrate with various power and deposition time by DC magnetron sputtering, in order to get high portion of $Fe_{16}N_2$ phase. Surface morphology, phase formation and magnetic properties were measured. As a result, Saturation magnetization and Remanence magnetization reach to ~2.45 T and 1.41T. But, Coercivity was not enough in this experiments. Its value lower than 100 Oe. Which is very close to theoretical value.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.36 no.2
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• pp.113-120
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• 2023

This paper introduces a simulation method for the collision between roadblocks and vehicles using LS-DYNA. The need to evaluate the performance of anti-ram barriers to prepare for vehicle impact has increased since vehicle impact threats have been included as a design criterion for nuclear power plants. Anti-ram barriers are typically certified for their performance through collision experiments. However, because Koreas has no performance testing facilities for anti-ram barriers, their performance can only be verified through simulations. LS-DYNA is a specialized program for collision simulation. Various organizations, including NCAC, distributes numerical models that have been validated for their accuracy with collision tests. In this study, we constructed a finite element model of the most critical vehicle barrier module and simulated collision between roadblocks and vehicles. The calculated results were verified by applying the validation criteria for vehicle safety facility collision simulations of NCHRP 179.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.79-79
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• 2013

Quantum-structures with nanoparticles have been attractive for various electronic and photonic devices [1,2]. In recent, nonvolatile memories such as nano-floating gate memory (NFGM) and resistance random access memory (ReRAM) have been studied using silicides, metals, and metal oxides nanoparticles [3,4]. In this study, we fabricated nonvolatile memories with silicides (WSi2, Ti2Si, V2Si) and metal-oxide (Cu2O, Fe2O3, ZnO, SnO2, In2O3 and etc.) nanoparticles embedded in polyimide matrix, and photovoltaic device also with SiC nanoparticles. The capacitance-voltageand current-voltage data showed a threshold voltage shift as a function of write/erase voltage, which implies the carrier charging and discharging into the metal-oxide nanoparticles. We have investigated also the electrical properties of ReRAM consisted with the nanoparticles embedded in ZnO, SiO2, polyimide layer on the monolayered graphene. We will discuss what the current bistability of the nanoparticle ReRAM with monolayered graphene, which occurred as a result of fully functional operation of the nonvolatile memory device. A photovoltaic device structure with nanoparticles was fabricated and its optical properties were also studied by photoluminescence and UV-Vis absorption measurements. We will discuss a feasibility of nanoparticles to application of nonvolatile memories and photovoltaic devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.115-116
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• 2008

The ferroelectric vinylidene fluoride-trifluoroethylene ($VF_2$-TrFE) and $Al_2O_3$ passivation layer for the Metal/Insulator/Ferroelectric/Semiconductor (MIFS) structure were deposited using spin coating and remote plasma atomic layer deposition (RPALD), respectively. A 2.5 ~ 3 wt % diluted solution of purified vinylidene fluoride-trifluoroethylene ($VF_2$: TrFE=70:30) in a DMF solution were prepared and deposited on silicon wafer at a optimized spin speed. After annealing in a vacuum ambient at 150 ~ $200^{\circ}C$ for 60 min, upper insulator layer were deposited at temperature ranging from 100 ~ $150^{\circ}C$ by RPALD. We described electrical and structural properties of MIFS fabricated by spin coating and RPALD methods.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.130-131
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• 2007

In this study, polyvinylidene fluoride/trifluoroethylene (PVDF-TrFE) was investigated. For a metal-ferroelectic-metal (MFM) structure, We obtained that the 70 nm-thick film showed the maximum polarization of $8.24\;{\mu}C/cm^2$, 2Pr of $6\;{\mu}C/cm^2$ and the coercive voltage of ${\pm}3.1\;V$ at 12 V. The 140 nm-thick film showed higher performance. However, the thicker film required a higher voltage. The current density was $10^{-6}{\sim}10^{-7}\;A/cm^2$ under 15 V. We can expect from these results that the electrical properties of the devices particularly ferroelectric thin film transistor using PVDF-TrFE copolymer, be able to be on the trade-off relationship between the remanent polarization and the leakage current.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.211-211
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• 2013

Ru-Cr은 차세대 반도체 메모리(RAM, MRAM, FeRAM), 헤드(MR, TMR), 캐피시터의 웨이퍼 등에 전극층이나 시드층 형성을 위해 스퍼터링 타겟으로 제조되며, IT산업이 발달함에 따라 수요가 증가하고 있다. 기존의 스퍼터링 타겟은 산처리와 주조와 같은 습식법이 주를 이루었으나, 긴 제조시간과 강산사용의 위험성화 강산폐유의 처리가 문제되고 있다. 최근에는 습식공정을 보완하기 위한 건식법의 연구가 진행 중이며, 합금소재에 대한 건식법의 연구가 필요하다. 본 연구에서는 폐 Ru-Cr 금속합금 스퍼터링 타겟을 Hammer-mill, jet-mill 등 건식으로 분쇄하고 RF-Plasma를 이용하여 소결에 용이한 구형, 고순도 Ru-Cr금속합금분말을 제조하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.179-179
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• 2016

희토류계 영구자석은 높은 보자력과 잔류 자화을 가지고 있어 자기기록저장매체, MEMS(엑츄에이터), 센서 등의 응용 분야에 적용시키기 위해 다양한 연구들이 진행되고 있다. 하지만 희토류계 원소의 수급 및 가격의 문제점으로 친환경자석으로의 전환 및 희토류나 중희토류를 사용하지 않는 비희토류계 영구자석을 개발하는 연구에 대한 필요성이 대두되고 있다. 이 중 Fe-N 계 자성 물질인 $Fe_{16}N_2$는 포화 자화 값이 현재까지의 자성물질 중 가장 높은 값(240emu/g)을 나타내며 상대적으로 높은 결정자기이방성 상수를 가지고 있어 비희토류계 영구자석 물질 중 하나로 주목받고 있다. 본 연구에서는 $Fe_{16}N_2$ 박막을 얻기 위해 DC Magnetron Sputtering 방법을 이용하여 Si wafer 위에 박막을 증착하고 증착공정 조건 중 질소 유량 및 Sputtering Power를 변수로 따른 박막의 성장, 조직변화, 자성 특성을 관찰을 통해 최적의 공정 조건을 찾고자 하였다. $N_2$ 가스 유량 변화에 따른 박막의 성장 속도는 거의 변화가 없었으며 $N_2$ 가스 유량의 증가에 따라 박막 내 Fe의 함유량은 감소하였다. 모든 공정 조건에서 $Fe_3N$, $Fe_4N$, $Fe_{16}N_2$ 상들이 섞여 성장하였으며 XRD를 통한 상분석과 더불어 VSM을 통한 자성 특성을 분석해본 결과 $Fe_{16}N_2$의 분율이 가장 높게 성장된 공정 조건은 Power는 200W, $N_2$ 가스 유량은 20sccm이었으며 이 조건에서 2.45T의 포화 자화 값과 1.4T의 잔류 자화 값을 얻을 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.161.2-161.2
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• 2017

희토류계 영구자석은 대부분의 전기, 전자 제품의 핵심부품이며 높은 보자력, $BH_{max}$를 가지고 있어 자기기록저장매체, MEMS(엑츄에이터), 소형센서, 소형모터 등의 응용 분야에 적용시키기 위해 다양한 연구들이 진행되고 있다. 그러나 영구자석에 들어가는 희토류계 원소의 수급의 어려움 및 가격의 문제점으로 친환경 자석으로의 전환 및 희토류나 중희토류를 사용하지 않는 비희토류계 영구자석을 제조 및 개발하는데 많은 연구가 이루어지고 있다. 이 중 Fe-N 계 자성물질인 $Fe_{16}N_2$는 포화 자화 값이 현재까지의 비희토류계 자성물질 중 가장 높은 값(240emu/g)을 나타내며 상대적으로 높은 결정자기이방성 상수를 가지고 있어 비희토류계 영구자석 물질 중 하나로 주목받으며 연구되어지고 있다. 본 연구에서는 $Fe_{16}N_2$ 박막을 얻기 위해 DC Magnetron Sputtering 방법을 이용하여 Si wafer 위에 박막을 증착하고 증착시간에 따라 두께를 제어하여 제조한 후 박막의 미세구조, 상 분석, 자성 특성을 관찰을 통해 최적의 공정 조건을 찾고자 하였다. 증착 시간에 따른 박막의 성장 속도는 일정하게 증가하였으며, 증착 시간의 증가에 따라 박막 내 $Fe_{16}N_2$의 상대적인 분율은 감소하였다. 모든 공정 조건에서 $Fe_3N$, $Fe_4N$, $Fe_{16}N_2$ 상들이 섞여 성장하였으며 XRD를 통한 상분석과 더불어 VSM을 통한 자성 특성을 분석해본 결과 $Fe_{16}N_2$의 분율을 가장 높게 성장된 공정 조건은 증착 시간이 10분이며 박막의 두께가 ${\sim}1{\mu}m$ 일 때, 최적의 조건을 얻을 수 있었으며, 이 때의 자성 특성을 분석한 결과 ~2.45T의 포화 자화 값과 ~1.41T의 잔류 자화 값을 얻을 수 있었다.