• Title/Summary/Keyword: Fe/Ni layer

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Investigation of Initiation of Electroless Ni-P and Ni-Cu-P deposition on pure iron

  • Yiyong, W-U;Kim, M.;S.C. Kwon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2001.11a
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    • pp.10-10
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    • 2001
  • In this paper, initial depositing process of electroless Ni-Cu-P alloy was investigated by means of SEM, TEM and AES. The results show that the initial deposition is inhomogeneous and there exist different transition layers between different coatings and substrates, which are decided by the structures and compositions of the bath. For Ni-P binary alloy, its deposition takes place superiorly at grain boundary and on some grains with beneficial texture, the thickness of transition layer composed of Ni-Fe-P reaches 2000 angstrom. But during initiation of Ni-Cu-P trinary alloy, only at grain boundary is prIor to be deposited electrolessly, transited layer contains Ni-Fe-Cu-P and is decreased to about 500 angstrom. The structures of the films of Ni-P and Ni-Cu-P are crystalline at the initial depositing stage. The mechanisms of the process are put forward in this paper.

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Fabrication of Thin film Magnetoresistive Device and the Dependency of Applied Manetic Field Direction (박막 자기저항 소자 제작 및 출력의 인가자장 각도 의존성)

  • Min, Bok-Ki;Lee, Won-Jae;Jeong, Soon-Jong;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05a
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    • pp.50-54
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    • 2003
  • The output characteristics of thin film NiO/NiFe bilayered magnetoresistive device have been measured as a function of the direction of external magnetic field. Each layer was fabricated by rf magnetron sputtering method, and especially, the under layer, NiO, was fabricated under the in-situmagnetic field of about 1000Oe. The magnetoresistive devices were designed with the angle of 45degree between the direction of current of the device pattern and the induces magnetic field in the NiO film layer. The output of the devices had a good linearity when the devices were placed on the external magnetic field perpendicular to induced field direction and also 45 degree with the currenr path direction.

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Giant Magnetoresistance Properties of NiO Spin Valves with Naturally Oxidized Free Layer (자연산화된 자유층을 갖는 NiO 스핀밸브 박막의 자기저항특성)

  • 김종기;주호완;이기암;황도근;이상석
    • Journal of the Korean Magnetics Society
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    • v.11 no.3
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    • pp.104-108
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    • 2001
  • The effect of specular electron scattering on natural oxidation of free layer in NiO spin valves have been investigated. The magnetoresistance (MR) ratio and the exchange biasing field ( $H_{ex}$) of NiO(600 $\AA$)Ni$_{81}$$Fe_{19}$(50$\AA$)/Co(7 $\AA$)/Cu(20 $\AA$)/Co(7 $\AA$)Ni$_{81}$$Fe_{19}$(70 $\AA$) spin valves were increased from 4.9 % to 7.3 %, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity p decreased from 28$\mu$$\Omega$m to 17$\mu$$\Omega$m, but $\Delta$$\rho$ did not almost change after the oxidation. The spin valves enhanced by the specular electron scattering in the natural]y Co/NiFe/NiFe $O_{x}$ free layer were confirmed from the depth profiles using Auger electron spectroscopy.scopy..

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Effect of Si on Corrosion of Fe-Cr and Fe-Cr-Ni Alloys in wet CO2 Gas

  • Nguyen, T.D.;Zhang, J.;Young, D.J.
    • Corrosion Science and Technology
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    • v.14 no.3
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    • pp.127-131
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    • 2015
  • Model alloys Fe-9Cr, Fe-20Cr and Fe-20Cr-20Ni (wt. %) with 0.1 and 0.2 % Si were exposed to $Ar-20CO_2-20H_2O$ gas at $818^{\circ}C$. The undoped alloys formed a thick iron-rich oxide scale. The additions of Si reduced scaling rates of Fe-9Cr to some extent but significantly suppressed the formation of iron oxide scales on Fe-20Cr and Fe-20Cr-20Ni. Carburisation also occurred in all undoped alloys, but not in Si-containing Fe-20Cr and Fe-20Cr-20Ni. Protection against carburisation was a result of the formation of an inner scale layer of silica.

The Magnetoresistance effects of number of layers and magnetic anisotropic in [NiFe/Cr] Multilayers (NiFe/Cr 다층박막의 층수와 자기이방성에 따른 자기저항특성)

  • 황도근;이상석;박창만;이기암
    • Journal of the Korean Magnetics Society
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    • v.5 no.3
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    • pp.210-215
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    • 1995
  • $Glass\Cr_{40\AA}\{[Cr_{10\AA}\NiFe_{50\AA}]}_N$ multilayers (number of layer N = 1, 2, 3, 4, 5, 6, 10) were made by dc magnetron sputtering under magnetic anisotropy of 200 G. Magnetoresistance curve MR(xx), MR(xy) were measured for the parallel and perpendicular current direction to external magnetic field. MR(xx) curves for the number of layer N=1, 5, 10 were almost became about zero percent, however the curves of other numbers appeared the phenomena of "positive magnetoresistance" that the resistance increased to external magnetic field, and the irregular and reversed curves in the vicinity of H=0 Oe.

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Numerical Study on Current-Induced Switching of Synthetic Antiferromagnet

  • Lee, Seo-Won;Lee, Kyung-Jin
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.149-154
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    • 2010
  • Synthetic antiferromagnets (SAFs) are used as free layer structures for various magnetic devices utilizing spintransfer torque (STT). Therefore, it is important to understand current-induced excitation of SAFs. By means of drift-diffusion and macrospin models, we studied the current-induced excitation of a SAF-free layer structure (NiFe/Ru/NiFe). The simulation results were compared with the previous experimental results [N. Smith et al., Phys. Rev. Lett. 101, 247205 (2008)]. We confirmed that a nonzero STT through the Ru layer is essential for explaining the experimental results.

The Oxidation of Kovar(Fe-29Ni-17Co) in Humidified nitrogen (가습된 질소 분위기에서의 Kovar(Fe-29Ni-17Co)산화)

  • 김병수;김민호;김상우;최덕균;손용배
    • Journal of the Korean Ceramic Society
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    • v.36 no.11
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    • pp.1228-1234
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    • 1999
  • In order to form a uniform oxidation layer and spinel crystalline phase that was supposed to help strong bonding in Kovar(Fe-29Ni-17Co)to-glass sealing the humidified nitrogen (2.3%H2O/N2) was used as an oxidation atmosphere. Kovar oxidation was diffusion-contolled and the activation energy was 2.51 kcal/mol at 600-900$^{\circ}C$ After oxidation at 600$^{\circ}C$ the oxidation layer was under 1$\mu\textrm{m}$ thickness and crystalline phase was spinel which was found to be suitable for the Kovar-to-glass sealing.

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Corrosion Behavior of Ni 200 and Ni-base Alloys in Hot Lithium Molten salt (고온 리튬용융염에서 Ni 200 및 Ni-base 합금의 부식거동)

  • Cho Soo-Hang;Lim Jong-Ho;Yun Ki-Seok;Park Seung-Won
    • Korean Journal of Materials Research
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    • v.14 no.4
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    • pp.251-259
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    • 2004
  • In the development of the advanced spent fuel management process based on the molten salt technology, it is essential to choose the optimum material for the process equipment handling molten salt. Corrosion behavior of Ni 200 and Ni-base alloys in molten salt of LiCl-$Li_2$O under oxidation atmosphere was investigated in the temperature range of $650~800^{\circ}C$ for 24~312 hrs. The order of corrosion rate was Ni 200 > Inconel 690 > Inconel 601 > Inconel 600. Inconel 600 alloy showed the highest corrosion resistance among the examined alloys, but Ni 200 exhibited the highest corrosion rate. Corrosion products of Inconel 600 and Inconel 601 were $Cr_2$$O_3$ and $NiFe_2$$O_4$. In case of Inconel 690, a single layer of $CrO_2$$O_3$ was formed in the early stage of corrosion and an outer layer of $NiFe_2$O$_4$ and inner layer of $Cr_2$$O_3$ were formed with increase of corrosion time. Inconel 600 showed local corrosion behavior and Inconel 601, 690 showed uniform corrosion behavior.

Effect of Plasma Oxidation lime on TMR Devices of CoFe/AlO/CoFe/NiFe Structure (절연막층의 플라즈마 산화시간에 따른 CoFe/AlO/CoFe/NiFe 구조의 터널자기저항 효과 연구)

  • 이영민;송오성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.4
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    • pp.373-379
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    • 2002
  • We investigated the evolution of magnetoresistance and magnetic property of tunneling magnetoresistive(TMR) device with microstructure and plasma oxidation time. TMR devices have potential applications for non volatile MRAM and high density HDD reading head. We prepared the tunnel magnetoresistance(TMR) devices of Ta($50{\AA}$)/NiFe($50{\AA}$)/IrMn($150{\AA}$)/CoFe($50{\AA}$)/Al($13{\AA}$)-O/CoFe($40{\AA}$)/FiFe($400{\AA}$)/Ta(($50{\AA}$) structure which have $100{\times}100\mu\textrm{m}^2$ junction area on $2.5{\times}2.5\textrm{cm}^2$ Si/$SiO_2$(($1000{\AA}$) substrates by an inductively coupled plasma(ICP) magnetron sputter. We fabricated the insulating layer using an ICP plasma oxidation method by with various oxidation time from 30 sec to 360 sec, and measured resistances and magnetoresistance(MR) ratios of TMR devices. We found that the oxidized sample for oxidation time of 80 sec showed the highest MR radio of 30.31 %, while the calculated value regarding inhomogeneous current effect indicated 25.18 %. We used transmission electron microscope(TEM) to investigate microstructural evolution of insulating layer. Comparing the cross-sectional TEM images at oxidation time of 150 sec and 360 sec, we found that the thickness and thickness variation of 360 sec-oxidized insulating layer became 30% and 40% larger than those of 150 sec-oxidized layer, repectively. Therefore, our results imply that increase of thickness variation with oxidation time may be one of the major treasons of the MR decrease.