• Title/Summary/Keyword: Fast switching

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Switching Transient Shaping by Application of a Magnetically Coupled PCB Damping Layer

  • Hartmann, Michael;Musing, Andreas;Kolar, Johann W.
    • Journal of Power Electronics
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    • v.9 no.2
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    • pp.308-319
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    • 2009
  • An increasing number of power electronic applications require high power density. Therefore, the switching frequency and switching speed have to be raised considerably. However, the very fast switching transients induce a strong voltage and current ringing. In this work, a novel damping concept is introduced where the parasitic wiring inductances are advantageously magnetically coupled with a damping layer for attenuating these unwanted oscillations. The proposed damping layer can be implemented using standard materials and printed circuit board manufacturing processes. The system behavior is analyzed in detail and design guidelines for a damping layer with optimized RC termination network are given. The effectiveness of the introduced layer is determined by layout parasitics which are calculated by application of the Partial Element Equivalent Circuit (PEEC) simulation method. Finally, simulations and measurements on a laboratory prototype demonstrate the good performance of the proposed damping approach.

Fast Context Switching Architecture in Embedded Systems (빠른 문맥전환을 위한 임베디드 시스템 구조)

  • Son, Jeongho
    • IEMEK Journal of Embedded Systems and Applications
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    • v.5 no.1
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    • pp.18-22
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    • 2010
  • In real-time embedded systems, the responsibility is the most important thing because it is related to human life. Context switching is a part of which can slow down the responsibility. We therefore should minimize the amount of state that needs to be saved during context switching. In this paper, we introduce a new architecture (Register Farm) for context switching which can exchange two contexts in one cycle time. Although it might increase the cost of MCU design and the complexity of circuit, it cannot miss any interrupt during context switching. Consequently, Register Farm architecture can make embedded systems spread out in human life because it can increase reliability and responsibility in real time embedded systems.

Self-Oscillating Switching Technique for Current Source Parallel Resonant Induction Heating Systems

  • Namadmalan, Alireza;Moghani, Javad Shokrollahi
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.851-858
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    • 2012
  • This paper presents resonant inverter tuning for current source parallel resonant induction heating systems based on a new self oscillating switching technique. The phase error is suppressed in a wide range of operating frequencies in comparison with Phase Locked Loop (PLL) techniques. The proposed switching method has the capability of tuning under fast changes in the resonant frequency. According to this switching method, a multi-frequency induction heating (IH) system is proposed by using a single inverter. In comparison with multi-level inverter based IH systems, the advantages of this technique are its simple structure, better transients and wide range of operating frequencies. A laboratory prototype was built with an operating frequency of 35 kHz to 55 kHz and 300 W of output power. The performance of the IH system shows the validity of the new switching technique.

A Study on Battery Chargers for the next generation high speed train using the Phase-shift Full-bridge DC/DC Converter (위상전이 풀-브리지 DC/DC 컨버터를 이용한 차세대 고속 전철용 Battery Charger에 관한 연구)

  • Cho, Han-Jin;Lee, Won-Cheol;Lee, Sang-Seok;Kim, Tae-Hwan;Won, Chung-Yuen
    • Proceedings of the KSR Conference
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    • 2009.05b
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    • pp.623-628
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    • 2009
  • There is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. Many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Especially, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

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A Study on the Battery Charger for Next Generation High Speed Train (차세대 고속 전철용 Battery Charger 에 관한 연구)

  • Jeong, Han-Jeong;Lee, Won-Cheol;Lee, Sang-Seok;Paik, Jin-Sung;Won, Chung-Yuen
    • Proceedings of the KSR Conference
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    • 2008.11b
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    • pp.321-324
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    • 2008
  • Recently, there is an increasing demand for efficient high power/weight auxiliary power supplies for use on high speed traction application. many new conversion techniques have been proposed to reduce the voltage and current stress of switching components, and the switching losses in the traditional pulse width modulation(PWM) converter. Among them, the phase shift full bridge zero voltage switching PWM techniques are thought most desirable for many applications because this topology permits all switching devices to operate under zero voltage switching(ZVS) by using circuit parasitic components such as leakage inductance of high frequency transformer and power device junction capacitance. The proposed topology is found to have higher efficiency than conventional soft-switching converter. Also it is easily applicable to phase shift full bridge converter by applying an energy recovery snubber consisted of fast recovery diodes and capacitors.

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Influence of Parasitic Parameters on Switching Characteristics and Layout Design Considerations of SiC MOSFETs

  • Qin, Haihong;Ma, Ceyu;Zhu, Ziyue;Yan, Yangguang
    • Journal of Power Electronics
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    • v.18 no.4
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    • pp.1255-1267
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    • 2018
  • Parasitic parameters have a larger influence on Silicon Carbide (SiC) devices with an increase of the switching frequency. This limits full utilization of the performance advantages of the low switching losses in high frequency applications. By combining a theoretical analysis with a experimental parametric study, a mathematic model considering the parasitic inductance and parasitic capacitance is developed for the basic switching circuit of a SiC MOSFET. The main factors affecting the switching characteristics are explored. Moreover, a fast-switching double pulse test platform is built to measure the individual influences of each parasitic parameters on the switching characteristics. In addition, guidelines are revealed through experimental results. Due to the limits of the practical layout in the high-speed switching circuits of SiC devices, the matching relations are developed and an optimized layout design method for the parasitic inductance is proposed under a constant length of the switching loop. The design criteria are concluded based on the impact of the parasitic parameters. This provides guidelines for layout design considerations of SiC-based high-speed switching circuits.

High-Frequency GaN HEMTs Based Point-of-Load Synchronous Buck Converter with Zero-Voltage Switching

  • Lee, Woongkul;Han, Di;Morris, Casey T.;Sarlioglu, Bulent
    • Journal of Power Electronics
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    • v.17 no.3
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    • pp.601-609
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    • 2017
  • Gallium nitride (GaN) power switching devices are promising candidates for high switching frequency and high efficiency power conversion due to their fast switching, low on-state resistance, and high-temperature operation capability. In order to facilitate the use of these new devices better, it is required to investigate the device characteristics and performance in detail preferably by comparing with various conventional silicon (Si) devices. This paper presents a comprehensive study of GaN high electron mobility transistor (HEMT) based non-isolated point-of-load (POL) synchronous buck converter operating at 2.7 MHz with a high step-down ratio (24 V to 3.3 V). The characteristics and performance of GaN HEMT and three different Si devices are analytically investigated and the optimal operating point for GaN HEMT is discussed. Zero-voltage switching (ZVS) is implemented to minimize switching loss in high switching frequency operation. The prototype circuit and experimental data support the validity of analytical and simulation results.

Deadbeat and Hierarchical Predictive Control with Space-Vector Modulation for Three-Phase Five-Level Nested Neutral Point Piloted Converters

  • Li, Junjie;Chang, Xiangyu;Yang, Dirui;Liu, Yunlong;Jiang, Jianguo
    • Journal of Power Electronics
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    • v.18 no.6
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    • pp.1791-1804
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    • 2018
  • To achieve a fast dynamic response and to solve the multi-objective control problems of the output currents, capacitor voltages and system constraints, this paper proposes a deadbeat and hierarchical predictive control with space-vector modulation (DB-HPC-SVM) for five-level nested neutral point piloted (NNPP) converters. First, deadbeat control (DBC) is adopted to track the reference currents by calculating the deadbeat reference voltage vector (DB-RVV). After that, all of the candidate switching sequences that synthesize the DB-RVV are obtained by using the fast SVM principle. Furthermore, according to the redundancies of the switch combination and switching sequence, a hierarchical model predictive control (MPC) is presented to select the optimal switch combination (OSC) and optimal switching sequence (OSS). The proposed DB-HPC-SVM maintains the advantages of DBC and SVM, such as fast dynamic response, zero steady-state error and fixed switching frequency, and combines the characteristics of MPC, such as multi-objective control and simple inclusion of constraints. Finally, comparative simulation and experimental results of a five-level NNPP converter verify the correctness of the proposed DB-HPC-SVM.

Development of 50kW High Efficiency Fast Charger with Wide Charging Voltage Range (넓은 충전전압 범위를 갖는 50kW급 고효율 급속충전기 개발)

  • Park, Jun-Sung;Kim, Min-Jae;Jeong, Heon-Soo;Kim, Joo-Ha;Choi, Se-Wan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.21 no.3
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    • pp.267-274
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    • 2016
  • In this study, a fast charger for electric vehicle with wide charging voltage range is proposed. To achieve high efficiency, three-level topologies are employed for the AC-DC and DC-DC converters. Given that the output range of the DC-DC converter in fast chargers is quite wide, the circulating current of conventional three-level converter will increase under low voltage condition. The proposed hybrid switching method mitigates this issue. When a coupled inductor is used on the output side, the circulating current is further reduced, and the switches $S_2$, $S_3$, $S_6$, and $S_7$ achieve turning-off under the ZCS condition. Experimental results from a 50 kW prototype are provided to validate the proposed charger, and a rated efficiency of 95.9% is obtained.

A Low Power Fast-Hopping Frequency Synthesizer Design for UWB Applications (UWB 응용을 위한 저전력 고속 스위칭 주파수 합성기의 설계)

  • Ahn, Tae-Won;Moon, Je-Cheol;Kim, Yong-Woo;Moon, Yong
    • 전자공학회논문지 IE
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    • v.45 no.4
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    • pp.1-6
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    • 2008
  • A fast-hopping frequency synthesizer that reduces complexity and power consumption is presented for MB-OFDM UWB applications. The proposed architecture uses 3960 MHz LC VCO, 528 MHz ring oscillator, passive mixer and LC-tuned Q-enhancement BPF to generate Band Group 1 frequencies. The adjacent channel rejection ratio is less than -40 dBc for 3432 MHz and -H dBc for 4488 MHz. A fast switching SCL-tpre MUX is used to produce the required channel output signal and it takes less than 2.2 ns for band switching. The total power consumption is 47.9 mW from a 1.8 V supply.