• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.1-4
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• 2006

Recently, with rapid development of digital media like semiconductor and large flat panel display, the manufacturing equipment is required to have high precision over large travel range. Moreover it should have high product throughput. To achieve high product throughput, a controller should perform fast point-to-point motion and high precision positioning after settling in spite of external disturbances or residual vibrations. We proposed a new mode switching control algorithm with an application to dual stage for long range and high precision positioning. The proposed algorithm uses a proximate time-optimal servomechanism for the fast settling and a time-delay controller for the high precision positioning. Experimental results show that the proposed method enables smooth mode switching and improves the settling time and the precision accuracy after settling by over than 33% and 45%, respectively.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.5
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• pp.425-430
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• 2006

To meet an increasing demand for high performance in gun dynamic plant, both a precise and a fast response positioning are strongly required for the gun servo system. A mode switching control(MSC) scheme, which includes a fine stabilizing controller, fast positioning one and a switching function, is widely used to meet this requirement. Stabilization is performed through PID controller, while a time optimal control method is used for target designation. In this paper, a modified PTOS(Proximate Time Optimal Servomechanism) algorithm is derived so as to accommodate the damping term in the gun plant model. Also, applying a mode switching strategy, the bumpless transfer is made possible when the controller switches from PTOS to PID. To show the effectiveness of the overall control system, simulation results are given including the gun dynamics.

• Proceedings of the KIEE Conference
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• 2004.05a
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• pp.33-37
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• 2004

To meet an increasing demand for high performance in gun dynamic plant, both a precise and a fast response positioning are strongly required for the gun servomechanism control. A mode switching control(MSC) system, which includes a fine stabilizing controller, fast positioning one and a switching function, is widely used to meet this requirement. Stabilization is performed through PID controller, while proximate time optimal servo(PTOS) is used for target designation. Because gun dynamic have large damping comparing to acceleration, PTOS algorithm with damping is newly derived. This paper adopts the initial value compensation method that improve the transient response after switching. Some simulation results are given to show the effectiveness of our scheme.

• Transactions of the Society of Information Storage Systems
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• v.7 no.1
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• pp.7-12
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• 2011

The flash memory has been remarked as the next generation media of portable and desktop computers' storage devices. Their features include non-volatility, low power consumption, and fast access time for read operations, which are sufficient to present flash memories as major data storage components for desktop and servers. The purpose of our study is to upgrade a traditional mirroring scheme based on SSD storages due to the relatively slow or freezing characteristics of write operations, as compared to fast read operations. For this work, we propose a new storage management scheme called Memory Mirror-Switching based on traditional mirroring scheme. Our Mirror-Switching scheme improves flash operation performance by switching write-workloads from flash memory to RAM and delaying write operations to avoid freezing. Our test results show that our scheme significantly reduces the write operation delay and storage freezing.

• Nuclear Engineering and Technology
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• v.54 no.2
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• pp.501-506
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• 2022

Long turn-off time limits high frequency operation of Bipolar Junction Transistors (BJTs). Turn-off time decreases with increases in the recombination rate of minority carriers at switching transients. Fast neutron irradiation on a Si BJT incurs lattice damages owing to the displacement of silicon atoms. The lattice damages increase the recombination rate of injected holes with electrons, and decrease the hole lifetime in the base region of pnp Si BJT. Fast neutrons generated from a beryllium target with 30 MeV protons by an MC-50 cyclotron were irradiated onto pnp Si BJTs in experiment. The experimental results show that the turn-off time, including the storage time and fall time, decreases with increases in fast neutron fluence. Additionally, it is confirmed that the base current increases, and the collector current and base-to-collector current amplification ratio decrease due to fast neutron irradiation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.754-759
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• 2004

We have studied the fringe field switching (FFS) mode with the positive dielectric anisotropy for the fast response time. The factors such as the physical properties of the LC, the cell gap, and the rubbing angle were critical for the fast response time of the FFS mode. The response time became 10 ms faster when the rotational viscosity of the new LC is 20 mPa.s lower than the conventional LC. When the cell gap changed from 3.6 ${\mu}{\textrm}{m}$ to 3.0 ${\mu}{\textrm}{m}$, it was possible to achieve the total response time and response times associated with grey-to-grey transitions under 16 ms. And the response times including grey-to-grey transitions become fast as the rubbing angle decreases.

• Journal of Information Display
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• v.5 no.2
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• pp.39-42
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• 2004

A novel fast-switching LCD with dual-domain bend (DDB) mode is described. DDB alignment is achieved using antiparallel-rubbed cell filled with chiral-doped LC. Initial alignment is mono-domain 180-degree twist. Tilt direction is controlled by oblique electric field to be counter direction in each domain. Twist-to-DDB deformation occurs continuously so that DDB mode does not require high-voltage initialization which is inevitable in Optically Compen sated Bend (OCB) mode. DDB gives wide and symmetric viewing angle in contrast to mono-domain bend formed from 180-degree twist showing strong asymmetry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.122-122
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• 2010

A Static Induction Thyristor (SI-Thyristor) has a great potential as power semiconductor switch for pulsed power or high voltage applications with fast turn-on switching time and high switching stress endurance (di/dt, dV/dt). However, due to direct commutation between gate driver and SI-Thyristor, it is difficult to design optimal gate driver at the aspect of impedance matching for fast gate current driving into internal SI-Thyristor. Thus, to penetrate fast positive gate current into steady off state of the SI-Thyristor, it is proposed and proceeded the internal impedance calculation of the SI-Thyristor at steady off state with the gate driver while switching conditions that are indicated applied gate voltage, $V_{GK}$ and applied high voltage across anode and cathode, $V_{AK}$.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2783-2785
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• 1999

A fast switching gate driver suitable for high performance self resonant electronic ballasts is presented. The proposed gate driver has negligible switching loss and driving loss owing to pnpn structure and zero voltage switching( ZVS ); moreover, the gate driver has frequency control capability. Therefore, a self resonant inverter using proposed gate driver can operate as external exciting resonant inverters. The experiments confirm that the proposed gate driver perform the desired operations over full power control range for 40W fluorescent lamp electronic ballast.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.181-186
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• 2005

We demonstrate that the finite rate of dielectric relaxation in liquid crystals which has been ignored previously causes profound effects in the fast dielectric reorientation of the director. The phenomenon is relevant for submillisecond switching of the director when the switching rate approaches the rate of dielectric relaxation through the reorientation of the molecular dipoles. A submillisecond switching ($15-400\;{\mu}s$ for an optical retardation shift $0.3-2.2\;{\mu}m$ in $10-15\;{\mu}m$ thick cells) is demonstrated for dual frequency nematic cells with high pretilt that maximizes the dielectric torque acting on the director. We propose the theory of dielectric response in which the electric displacement depends not only on the present (as in the standard theory) but also on the past values of electric field and director. We design an experiment in which the standard "instantaneous" model and our model predict effects of opposite signs; the experimental data support the latter model.