• Title/Summary/Keyword: Factor V

Search Result 2,486, Processing Time 0.039 seconds

The Design of BCM based Power Factor Correction Control IC for LED Applications (LED 응용을 위한 BCM 방식의 Power Factor Correction Control IC 설계)

  • Kim, Ji-Man;Jung, Jin-Woo;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.12 no.6
    • /
    • pp.2707-2712
    • /
    • 2011
  • In this paper, a power factor correction (PFC) control circuit using single stage boundary conduction mode(BCM) for the 400V. 120W LED drive application has been designed. The proposed control circuit is aimed for improvement of the power factor correction and reduction of the total harmonic distortion. In this circuit, a new CMOS multiplier structure is used instead of a conventional BJT(bipolar junction transistor) based multiplier where has a relatively large area. The CMOS multiplier can bring 30 % reduced chip area, competitive die cost in comparison with the conventional BJT multiplier.

Air Damping Evaluation for Laterally Driven Electrostatic Repulsive-Force Microactuators Using Creeping Flow Model (수평 구동형 정전 반발력 마이크로엑추에이터의 Creeping 유동 모델에 의한 공기 감쇠)

  • Lee, Gi-Bang;Seo, Yeong-Ho;Jo, Yeong-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
    • /
    • v.50 no.11
    • /
    • pp.581-588
    • /
    • 2001
  • This paper presents theoretical and experimental study on the quality-factor of the laterally oscillated electrostatic microactuator, driven by a lateral repulsive-force generated by the asymmetry of planar electric field. The quality-factor of the repulsive-force microactuator using a creeping flow model of the ambient air is evaluated. By filling the simulation results of damping force, we evaluate the dimensionless damping force, $\alpha$, thereby obtaining an analytical damping force, F, in the form of $F=\mu\; \alphaUL,\; where\; \mu,$ U and L denote the air viscosity, the velocity and the characteristic length of the movable electrodes. The measured quality-factor increases from 12 to 13 for the DC bias voltage increased from 60V to 140v. The theoretical quality-factor estimated from the creeping flow model increases from 14.9 to 18.7. Characteristics of quality-factor of the repulsive-force microactuator have been discussed and compared with those of the conventional attractive-force microactuator.

  • PDF

Natural Background and Enrichment Characteristics of the Stream Sediments from the Hamyang-Sancheong Area (함양-산청지역 하상퇴적물의 자연배경치 및 부화특성)

  • Park, Young-Seog;Park, Dae-Woo;Kim, Jong-Kyun
    • Economic and Environmental Geology
    • /
    • v.42 no.3
    • /
    • pp.195-206
    • /
    • 2009
  • We investigated natural background and enrichment characteristics and predicted geochemical disaster for stream sediments in the Hamyang-Sancheong area. Stream sediments samples were collected 95 ea in study area. The stream sediments were well known that had not possibility of contamination effect and represented drainage basins. We got the major and hazardous elements concentrations by XRF, ICP-AES and NAA analysis methods. Acid decomposition for the ICP-AES has been used $HClO_4$ and HF with $200^{\circ}C$ heating at 1st and after that $HClO_4$ HF and HCl with $200^{\circ}C$ heating at 2nd stage. We could know the characteristics that concentration of Cu and Co decreased when concentration of $SiO_2$ increased in correlation analysis. The enrichment factor of the stream sediments was below 2 in study area. This result indicated that study area belonged to moderate enrichment. The stream sediments of Hamyang area were enriched in order of Pb>Th>Cr>V>Co>Cu and those of Sancheong area were enriched in order of Pb>Th>Cr>Co>V>Cu. The enrichment factor(E.F.) of the Pb, Cr, Co and V was similar between Hamyang and Sancheong area. The enrichment factor of the Th was higher in Hamyang area and that of the Cu was higher in Sancheong area. The enrichment factor of the Pb was highly enriched in all study area than earth crust mean. But we could know that study area was not exposed to the pollution of the Pb through the tolerable level.

Sintering and Microwave Dielectric Properties of $ZnWO_4$ ($ZnWO_4$ 소결특성 및 고주파 유전특성)

  • Lee, Kyoung-Ho;Kim, Yong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11b
    • /
    • pp.386-389
    • /
    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

  • PDF

Sintering and Microwave Dielectric Properties of $ZnWO_4$ ($ZnWO_4$ 소결특성 및 고주파 유전특성)

  • 이경호;김용철
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2001.11a
    • /
    • pp.386-389
    • /
    • 2001
  • In this study, development of a new LTCC material using non-glassy system was attempted with respect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, ZnWO$_4$ was turned out the suitable LTCC material. ZnWO$_4$ can be sintered up to 98% of full density at 105$0^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and -70ppm/$^{\circ}C$, respectively In order to modify the dielectric properties and densification temperature, B$_2$O$_3$ and V$_2$O$_{5}$ were added to ZnWO$_4$. 40 mol% B$_2$O$_3$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to -7.6ppm/$^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of V$_2$O$_{5}$ in ZnWO$_4$-B$_2$O$_3$ system enhanced liquid phase sintering. 0.lwt% V$_2$O$_{5}$ addition to the 0.6ZnWO$_4$-0.4B$_2$O$_3$ system, reduced the sintering temperature down to 95$0^{\circ}C$ Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and -21.6ppm/$^{\circ}C$ respectively.ively.

  • PDF

Validation of the Disaster Adaptation and Resilience Scale for Vulnerable Communities in Vietnam's Coastal Regions

  • Thanh Gia Nguyen;Binh Thang Tran;Minh Tu Nguyen;Dinh Duong Le
    • Journal of Preventive Medicine and Public Health
    • /
    • v.57 no.3
    • /
    • pp.279-287
    • /
    • 2024
  • Objectives: This study validated the Vietnamese version of the Disaster Adaptation and Resilience Scale (DARS) for use in vulnerable communities in Vietnam. Methods: This was a cross-sectional study involving 595 adults from 2 identified communities. The original DARS assessment tool was translated, and the validity and reliability of the Vietnamese version of DARS (V-DARS) were assessed. The internal consistency of the overall scale and its subscales was evaluated using Cronbach's alpha and McDonald's omega reliability coefficients. Confirmatory factor analysis (CFA) was employed to evaluate its construct validity, building upon the factor structure identified in exploratory factor analysis (EFA). Construct validity was assessed based on convergent and discriminant validity. Results: Following the established criteria for EFA, 8 items were removed, resulting in a refined V-DARS structure comprising 35 items distributed across 5 distinct factors. Both alpha and omega reliability coefficients indicated strong internal consistency for the overall scale (α=0.963, ω=0.963) and for each of the 5 sub-scales (all>0.80). The CFA model also retained the 5-factor structure with 35 items. The model fit indices showed acceptable values (RMSEA: 0.072; CFI: 0.912; TLI: 0.904; chi-square test: <0.01). Additionally, the convergent and discriminant validity of the V-DARS were deemed appropriate and satisfactory for explaining the measurement structure. Conclusions: Our findings suggest that the V-DARS is a valid and reliable scale for use within vulnerable communities in Vietnam to assess adaptive responses to natural disasters. It may also be considered for use in other populations.

Vibrio Vulnificus Induces the Inflammation of Mouse Ileal Epithelium: Involvement of Protein Kinase C and Nuclear Factor-Kappa B (회장 상피세포에서 비브리오균(Vibrio vulnificus)의 염증 유도 기작 연구: protein kinase C와 nuclear factor kappa-B의 관련성)

  • Han, Gi Yeon;Jung, Young Hyun;Jang, Kyung Ku;Choi, Sang Ho;Lee, Sei-Jung
    • Journal of Life Science
    • /
    • v.24 no.6
    • /
    • pp.664-670
    • /
    • 2014
  • In the present study, we investigate the role of V. vulnificus in promoting the inflammation of mouse ileal ephitelium and its related signaling pathways. ICR mice were infected orally with V. vulnificus ($1{\times}10^9CFU$) for 16 h as a representative model of food-borne infection. To find the major portal of entry of V. vulnificus in mouse intestine, we have measured the levels of bacterial colonization in small intestine, colon, spleen, and liver. V. vulnificus appeared to colonize in intestine and colon in the order of ileum >> jejunum> colon, but lack in the duodenum, spleen, and liver. V. vulnificus in ileum caused severe necrotizing enteritis and showed shortened villi heights accompanied by an expanded width and inflammation, compared with the control mice. V. vulnificus induced ileal epithelium inflammation by activating phosphorylation of PKC and membrane translocation of $PKC{\alpha}$. V. vulnificus induced the phosphorylation of ERK and JNK, but did not affect p38 MAPK phosphorylation. Notably, V. vulnificus stimulated the I-${\kappa}B$-dependent phosphorylation of NF-${\kappa}B$ in mouse ileal epithelium. Finally, the ileal infection of V. vulnificus resulted in a significant increase in expression of proinflammatory cytokines and Toll-like receptors, respectively, compared to the control. Collectively, our results indicate that V. vulnificus induces ileal epithelium inflammation by increasing NF-${\kappa}B$ phosphorylation via activation of PKC, ERK, and JNK, which is critical for host defense mechanism in food-borne infection by V. vulnificus.

Shape Optimization of Cooling Channel with V-shaped Ribs (V-형 리브가 부착된 냉각유로의 형상 최적설계)

  • Lee, Young-Mo;Kim, Kwang-Yong
    • The KSFM Journal of Fluid Machinery
    • /
    • v.10 no.2 s.41
    • /
    • pp.7-15
    • /
    • 2007
  • A numerical procedure for optimizing the shape of three-dimensional channel with V-shaped ribs extruded on both walls has been carried out to enhance the turbulent heat transfer. The response surface based optimization is used as an optimization technique with Reynolds-averaged Wavier-stoked analysis. Shear stress transport (SST) turbulence model is used as a turbulence closure. Computational results for average heat transfer rate show good agreements with experimental data. The objective function is defined as a linear combination of heat transfer and friction loss-related terms with a weighting factor. Three dimensionless variables such as, rib pitch-to-rib height ratio, rib height-to-channel height ratio, and the attack angle of the rib are chosen as design variables. Nineteen training points obtained by D-optimal designs for three design variables construct a reliable response surface. In the sensitivity analysis, it is found that the objective function is most sensitive to the ratio of rib height-to-channel height ratio. And, optimal values of design variables have been obtained in a range of the weighting factor.

Laterally-Driven Electrostatic Repulsive-Force Microactuator (수평구동형 정전반발력 마이크로액추에이터)

  • Lee, Gi-Bang;Jo, Yeong-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.25 no.3
    • /
    • pp.424-433
    • /
    • 2001
  • We present a new electrostatic repulsive-force microactuator using a lateral repulsive force induced by an asymmetric distribution of electrostatic field. The lateral repulsive force has been characterized by a simple analytical equation, derived from a finite element simulation. A set of repulsive force polysilicon microactuators has been designed and fabricated by a 4-mask surface-micromachining process. Static and dynamic micromechanical behavior of the fabricated microactuators has been measured at the atmospheric pressure for a varying bias voltage. The static displacement of the fabricated microactuator, proportional to the square of the DC bias voltage, is obtained as 1.27 $\mu\textrm{m}$ for the DC bias voltage of 140V. The resonant frequency of the repulsive-force microactuator increases from 11.7 kHz to 12.7 kHz when the DC bias voltage increases from 60V to 140V. The measured quality-factor varies from 12 to 13 for the bias volatge range of 60V∼140V. The characteristics of the electrostatic repulsive-force have been discussed and compared and compared with those of the conventional electrostatic attractive-force.

Amorphous silicon thin-film solar cells with high open circuit voltage by using textured ZnO:Al front TCO (ZnO:Al 투명전도막을 이용한 높은 개방전압을 갖는 비정질 실리콘 박막 태양전지 제조)

  • Lee, Jeong-Chul;Dutta, Viresh;Yi, Jun-Sin;Song, Jin-Soo;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2006.06a
    • /
    • pp.158-161
    • /
    • 2006
  • Superstrate pin amorphous silicon thin-film (a-Si:H) solar cells are prepared on $SnO_2:F$ and ZnO:Al transparent conducting oxides (TCO) In order to see the effect of TCO/P-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage $V_{oc}$ than cells prepared on $SnO_2:F$. Presence of thin microcrystalline p-type silicon layer $({\mu}c-Si:H)$ between ZnO:Al and p a-SiC:H plays a major role by causing improvement in fill factor as well as $V_{oc}$, of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of pi interface, we could obtain high $V_{oc}$, of 994mv while keeping fill factor (72.7%) and short circuit current density $J_{sc}$ at the same level as for the cells on $SnO_2:F$ TCO. This high $V_{oc}$ value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

  • PDF