• Journal of the Microelectronics and Packaging Society
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• v.9 no.4
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• pp.11-16
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• 2002

In this study, the dry etching characteristics of $SrBi_2Ta_2O_9$ (SBT) thin films were investigated by using ICP-RIE (inductively coupled plasma-reactive ion etching). The etching damage and degradation were analyzed with XPS (X-ray photoelectron spectroscopy) and C-V (Capacitance-Voltage) measurement. The etching rate increased with increasing the ICP power and the capacitively coupled plasma (CCP) power. The etch rate of 900$\AA$/min was obtained with 700 W of ICP power and 200 W of CCP power. The main problem of dry etching is the degradation of the ferroelectric material. The damage-free etching characteristics were obtained with the $Ar/C1_2/CHF_3$ gas mixture of 20/14/2 when the ICP power and CCP power were biased at 700 W and 200 W, respectively. The experimental results show that the dry etching process with ICP-RIE is applicable to the fabrication of the single transistor type ferroelectric memory device.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.1
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• pp.13-19
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• 2009

A 440MHz wireless and passive surface acoustic wave (SAW) based chemical sensor was developed on a $41^{\circ}YX\;LiNbO_3$ piezoelectric substrate for simultaneous measurement of $CO_2$ gas and relative humidity (RH) using a reflective delay line pattern as the sensor element. The reflective delay line is composed of an interdigital transducer (IDT) and several shorted grating reflectors. A Teflon AF 2400 and a hydrophilic $SiO_2$ layer were used as $CO_2$ and water vapor sensitive films. The coupling of mode (COM) modeling was conducted to determine optimal device parameters prior to fabrication. According to simulation results, the device was fabricated and then wirelessly measured using the network analyzer. The measured reflective coefficient $S_{11}$ in the time domain showed high signal/noise (S/N) ratio, small signal attenuation, and few spurious peaks. In the $CO_2$ and humidity testing, high sensitivity ($2^{\circ}/ppm$ for $CO_2$ detection and $7.45^{\circ}/%$RH for humidity sensing), good linearity and repeatability were observed in the $CO_2$ concentration ranges of $75{\sim}375ppm$ and humidity levels of $20{\sim}80%$RH. Temperature and humidity compensations were also investigated during the sensitivity evaluation process.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.465-472
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• 2017

The ingot fabrication conditions related with the thermal shock bearing phase and microstructure have investigated for the rare earth zirconate ceramic material, lanthanum gadolinium zirconate, as a thermal barrier coating using electron beam evaporation method. The thermal shock resistance of the prepared ingot was evaluated by high energy electron beam irradiation. The rare earth zirconate ceramic powder was prepared by controlling the raw material powder composition of $La_2O_3$, $Gd_2O_3$ and $ZrO_2$ so as to have a composition of $(La_{0.3}Gd_{0.7})_2Zr_2O_7$ which was selected from the former study. Ingot samples were prepared under two conditions. The first condition is prepared by sintering the prepared powder mixture to form an ingot. The second condition is prepared by calcining the prepared powder mixture to form a composite phase and then sintering to form an ingot. X-ray diffraction(XRD) and Scanning Electron Microscope(SEM) were used to analyze phase forming behavior and microstructure of ingot samples. Nanoindentation method used to obtain elastic modulus and hardness of each ingot specimen. Also the stress distribution of ingot was simulated by using FEM method assuming the ingot surface was exposed to electron beam. As a results, in the case of an ingot having a network-shaped microstructure in which relatively coarse pores are included, it seems that the thermal shock resistance was higher than in the case of an ingot having a microstructure composed of relatively fine grains only or particles with the similar level size when the high energy electron beam irradiation.

• Journal of the Korea institute for structural maintenance and inspection
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• v.24 no.3
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• pp.80-86
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• 2020

In the fabrication process of inverted multi-tee (IMT) slabs, concrete has to be poured twice due to its shape, which is a huge disadvantage as a precast member. To overcome this, a new technique for manufacturing IMT slabs using a slipform method has been recently developed. In this study, flexural and shear tests were carried out to investigate the structural performances of inverted multi-tee (IMT) slabs manufactured using slipform method. To this end, one flexural specimen and two shear specimens with topping concrete were fabricated, and their failure modes and crack patterns, and the slips that occurred between the precast slab and topping concrete were measured and analyzed in detail. In addition, the flexural and shear strengths of the specimens were evaluated by utilizing the structural design code, and a shear strength estimation method, which is suitable for composite IMT slabs with different concrete properties, was proposed for practical design. The IMT slab satisfied the nominal flexural strength calculated by the current design code, and the proposed method provided a good estimation of the shear strength of the specimens.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.329-329
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• 2007

Photoconductive poly crystalline lead oxide coated on amorphous thin film transistor (TFT) arrays is the best candidate for direct digital x-ray detector for medical imaging. Thicker films with lessening density often show lower x-ray induced charge generation and collection becomes less efficient. In this work, we present a new methodology used for the high density deposition of PbO. We investigate the structural properties of the films using X-ray diffraction and electron microscopy experiments. The film coatings of approximately $200\;{\mu}m$ thickness were deposited on $2"{\times}2"$ conductive-coated glass substrates for measurements of dark current and x-ray sensitivity. The lead oxide (PbO) films of $200\;{\mu}m$ thickness were deposited on glass substrates using a wet coating process in room temperature. The influence of post-deposition annealing on the characteristics of the lead oxide films was investigated in detail. X-ray diffraction and scanning electron microscopy, and atomic force microscopy have been employed to obtain information on the morphology and crystallization of the films. Also we measured dark current, x-ray sensitivity and linearity for investigation of the electrical characteristics of films. It was found that the annealing conditions strongly affect the electrical properties of the films. The x-ray induced output charges of films annealed in oxygen gas increases dramatically with increasing annealing temperatures up to $500^{\circ}C$ but then drops for higher temperature anneals. Consequently, the more we increase the annealing temperatures, the better density and film quality of the lead oxide. Analysis of this data suggests that incorporation and decomposition reactions of oxygen can be controlled to change the detection properties of the lead oxide film significantly. Post-deposition thermal annealing is also used for densely film. The PbO films that are grown by new methodology exhibit good morphology of high density structure and provide less than $10\;pA/mm^2$ dark currents as they show saturation in gain (at approximate fields of $4\;V/{\mu}m$). The ability to operate at low voltage gives adequate dark currents for most applications and allows voltage electronics designs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.241-241
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• 2007

We fabricated SmBCO coated conductors(CCs) on IBAD-MgO templates using co-evaporation method. IBAD-MgO templates consist of PLD-LMO/epi-MgO/IBAD-MgO/Ni-alloy and showed good in-plane texture of below FWHM 7 degree. Evaporation rates of Sm, Ba, and Cu were precisely controlled to get the optimum composition ratio after deposition process. To optimize the oxygen partial pressure of reaction region, wide range of the partial pressure was investigated from 1 mTorr to 15 mTorr. By reducing the oxygen partial pressure to 5mTorr, (103)grains in SmBCO layer have been increased. On the other hand, there were only (001)grains in SmBCO layer deposited at 15 mTorr $O_2$. Deposition temperature was also investigated from $600^{\circ}C\;to\;800^{\circ}C$ to make high Ic SmBCO CCs. SmBCO on IBAD MgO template showed that the Ic increased gradually at higher growth temperature to $800^{\circ}C$, which the highest Jc and Ic is $2.6\;MA/cm^2$ and 500 A/cm-w., respectively.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.359-368
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• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.239-250
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• 2003

The reliability degradation phenomena in the SiGe hetero-junction bipolar transistor (HBT) are investigated in this review. In the case of the SiGe HBT the decrease of the current gain, the degradation of the AC characteristics, and the offset voltage are frequently observed, which are attributed to the emitter-base reverse bias voltage stress, the transient enhanced diffusion, and the deterioration of the base-collector junction due to the fluctuation in fabrication process, respectively. The reverse-bias stress on the emitter-base junction causes the recombination current to rise, increasing the base current and degrading the current gain, because hot carriers formed by the high electric field at the junction periphery generate charged traps at the silicon-oxide interface and within the oxide region. Because of the enhanced diffusion of the dopants in the intrinsic base induced by the extrinsic base implantation, the shorter distance between the emitter-base junction and the extrinsic base than a critical measure leads to the reduction of the cut-off frequency ($f_t$) of the device. If the energy of the extrinsic base implantation is insufficient, the turn-on voltage of the collector-base junction becomes low, in the result, the offset voltage appears on the current-voltage curve.

• Journal of Sericultural and Entomological Science
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• v.49 no.1
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• pp.24-27
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• 2007

Silkworm fed on the mulberry leaf mixed with silver nanoparticle to produce silver-nanoparticle embedded cocoon. Comparative analysis of silver content of cocoon shell, percentage of pupation and percentage of cocoon-shell weight showed that the optimum concentration and the feeding period of mulberry leaf mixed with silver nanoparticle were 500 ppm and the period from 3 day 5 instar to mounting of silkworm. The silver content of cocoon was observed variously by silkworm breedings. C212 variety makes pale yellow cocoon with the highest silver content(69%). Using the scanning electron microscope, we showed that the size of silver nanoparticles in silk was observed from 26.98 to 99.81nm. Silver-nanoparticle embedded silk is expected to use as high valuable application owing to the different functional properties including antibiotic characteristics and mechanical and electronic properties. The applicable fields expected is antistatic and/or electronic products with biological degradable natural materials.