• 전력전자학회논문지
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• 제18권5호
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• pp.458-465
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• 2013

This paper proposes a novel soft-switched auxiliary resonant circuit to provide a Zero-Voltage-Transition at turn-on for a conventional PWM boost converter in a PFC application. The proposed auxiliary circuit enables a main switch of the boost converter to turn on under a zero voltage switching condition and simultaneously achieves both soft-switched turn-on and turn-off. Moreover, for the purpose of an intelligent multi-chip power module fabrication, the proposed circuit is designed to satisfy several design constraints including space saving, low cost, and easy fabrication. As a result, the circuit is easily realized by a low rated MOSFET and a small inductor. Detail operation and the circuit waveform are theoretically explained and then simulation and experimental results are provided based on a 1.8 kW prototype PFC converter in order to verify the effectiveness of the proposed circuit.

• 한국전기전자재료학회논문지
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• 제26권6호
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• 한국세라믹학회지
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• 제27권4호
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• pp.473-480
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• 1990

Low-voltage ZnO-based varistors were made by seed grain method at various sintering conditions. Their microstructure and electrical properties were investigated and comlpared with those of the ZnO varistors made by a conventional method at the same sintering condition. During the sintering process, the added seed ZnO grain rapidly grew to be a gaint grain(above 500$\mu\textrm{m}$) provinding easy current path. Therefore the breakdown voltage was lowered as much as the order of 1/10-1/5 in comparison to that of the varistor made by a conventional method. But the grain size of the giant ZnO was little influenced by sintering condition, so the breakdown voltate was also little influenced. The weight loss was decreased by the addition of the seed grain, because the giant grain decreased the evaporation area. Therefore the nonobmic property of the specimen made by seed grain method was little influencedby sintering condition. In this research the low-voltage varistor made by seed grain method showed the least leakage current when sintered at 1150$^{\circ}C$ for zero hour.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.487-491
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• 2003

Design procedure of corrugated horn antenna for mm-wave frequency range is presented, and hybrid condition in horn is calculated. Balanced hybrid mode should be converted in the horn from TE11 mode by the proper corrugation dimensions which size are available to be fabricated under the mm-wave short wavelength condition. In this paper, corrugate profiles which satisfy both hybrid condition and fabrication possibility are obtained.. By cylindrical mode theory, the electromagnetic fields both inside hem and corrugation are delivered. Propagation characteristics in hem is calculated by the mode impedance matching method with boundary conditions, and radiation fields are obtained by the Kirchhoff-Hyugen principle to the hem aperture fields. A mm-wave corrugated horn operates on 85 - 115GHz is designed and fabricated, and results of measurement are also shown.

• Progress in Superconductivity
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• 제12권1호
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• pp.32-35
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• 2010

Potassium doped $BaFe_2As_2$ superconducting thin films by using an ex situ pulsed laser deposition technique were fabricated in various conditions to find out an optimal growth condition. Controlled conditions were annealing temperature, annealing time, and mass of potassium. The $Ba_{1-x}K_xFe_2As_2$ thin films which has most good quality is fabricated at a condition of annealing temperature at $700^{\circ}C$, annealing time of 60 minutes, and 0.6 g of potassium lumps. In this condition we were able to fabricate good quality films with high transition temperature of ~ 39 K.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.107-110
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• 2000

In this experiment, we fabricated pyramid-type silicon tunneling devices in which a tunneling current flow between a micro-tip and Si$_3$N$_4$ thin film membrane. A MEMS process was used for the fabrication of the tunneling devices. The micro-tips were formed on Si wafers by undercutting a differently oriented square of SiO$_2$ with KOH. The stiffness of the Si$_3$N$_4$ films were observed and the model for the stiffness calculation, which is useful in predicting the stiffness even when the stiffness ranges beyond the scope of the normal experimental condition, was suggested.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 춘계학술대회
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• pp.94-97
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• 2005

For the fabrication of poly-crystalline silicon ingot, CCCC (Cold Crucible Continuous Casting) method under a high frequency alternating magnetic field, was utilized in order to prevent crucible consumption and ingot contamination and to increase production rate. In order to effectively and continuously melt and cast silicon, which has a high radiation heat loss due to the high melting temperature and a low induction heating efficiency due to a low electric conductivity, Joule and pinch effects were optimized. Throughout the present investigation, poly-crystalline Si ingot was successfully produced at the casting speed of above 1.5 mm/min under a non-contact condition.

• 한국정밀공학회지
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• 제23권1호
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• pp.89-96
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• 2006

In this study, fabrication of the large area silicon mirror is accomplished by anisotropic wet etching using micromachining technology for implementation of integrated slim optical pickup and the process condition is also established for improving the mirror surface roughness. Until now, few results have been reported about the production of highly stepped $9.74^{\circ}$ off-axis-cut silicon wafers using wet etching. In addition rough surface of the mirror is achieved in case of tong etching time. Hence a novel method called magnetorheolocal finishing is applied to enhance the surface quality of the mirror plane. Finally, areal peak to valley surface roughness of mirror plane is reduced about 100nm in large area of $mm^2$ and it is applicable to optical pickup using infrared wavelength.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.714-719
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• 2004

Controlling the cure depth of the Fa1260T photopolymer enhances the quality of a microstructure and minimizes its size in microstereolithography. In this work, variation of cure depth of the Fa1260T photopolymer is investigated while the concentration of a photopolymerization inhibitor as a radical quencher was varied. The energy source inducing photopolymerization was a He-Cd laser and a motorized stage controled the laser beam path accurately. The effects of process variables such as laser beam power and scan speed on the cure depth were examined. Optimum conditions for the minimum cure depth were determined as laser power of 230 W and scan speed of 40-50 m/s at the concentration of the radical quencher of 5％. The minimum cure depth at the optimal condition was 14 m. The feasibility of the fabrication of microstructures such as a microcup, microfunnel, and microgrid of 100 m size is demonstrated using Super IH process.