• 한국세라믹학회지
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• 제47권6호
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• pp.583-589
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• 2010

In this paper, the properties of reclaimed ash(RA) from various domestic thermal power plants(S, D and H) were analyzed, and the possibility of fabricating the artificial lightweight aggregate(ALA) using RA was studied. The chemical compositions of RA are similar to the clay, but it had higher concentrations of alkali earth metal oxides(CaO, MgO) and unburned-carbon. The TCLP(Toxicity Characteristic Leaching Procedure) results showed that the dissolution concentrations of heavy metal ions of RA were below the limitation defined by the enforcement regulation of wastes management law in Korea. The results of IC analysis showed that leaching concentration of $Cl^-$ ion was 124 ppm for RA of HN and ${SO_4}^{2-}$ ion was leached a few hundreds ppm for all RA in this study. The ALAs with various mass ratio of clay to reclaimed ash(RA:Clay = 7:3, 6:4, 5:5, 4:6, 3:7) were sintered with a electric muffle furnace at the temperature of $1050{\sim}1200^{\circ}C$. The specific gravity and water absorption(%) of the sintered ALAs were 1.1~1.8 and 10~30% respectively. The ALA sintered in the rotary kiln at $1125^{\circ}C$ showed a bulk density of 1.7 and water absorption of 15.2%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.425-425
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• 2008

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3mW is obtained at the temperature difference of 45K. We provide a promising approach for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which can employ nanostructures for high thermoelectric properties.

• 한국주조공학회지
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• 제17권2호
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• pp.170-179
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• 1997

A noble technique has been developed for fabricating in situ formed $TiC_p/Al$ composites. In this process, fairly stable TiC particles were in situ synthesized in liquid aluminum by the interfacial reaction between an Al-Ti melt and SiC, which is a comparatively unstable carbide from the view-point of thermodynamics. It is possible in the present process to generate TiC particles of nearly 1 ${\mu}m$ in diameter, even utilizing SiC of 14 ${\mu}m$ as raw material. However, the dispersion behavior of TiC particles in the matrix depends on the size of the raw material SiC. Decomposing finer SiC makes the dispersion of TiC particles more uniform and the mechanical properties of composites are improved accordingly. The structure of in situ composites and their mechanical properties are affected by the fabrication temperature and the stirring time. It has been found that the most suitable condition for fabrication should be applied depending on the size of the raw material, even if the same kinds of carbide are used. Furthermore, although Al-Ti-Si system intermetallic compounds are detected in a $TiC_p/Al-Si$ composite which is fabricated by conventional melt-stirrng method, these compounds can not be observed in a $TiC_p/Al-Si$ composite made by this in situ production method. Hence the mechanical properties of the in situ $TiC_p/Al-Si$ composite are superior to those of the conventional $TiC_p/Al-Si$ composites.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
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• pp.400-403
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• 2012

$Cu_2ZnSnSe_4$(CZTSe) is emerged as a promising material for thin-film solar cells because of non-toxic, inexpensive and earth abundant more than $Cu(In,Ga)Se_2$ materials. For fabricating compound semiconductor thin-film solar cells, CdS is widely used for a buffer layer which fabricated by a chemical bath deposition method (CBD). Through the experiment, we controlled deposition temperature and mol ratio of solution conditions to find the proper grain 크기 and exact composition. The optimum CdS layers were characterized in terms of surface morphology by using a scanning electron microscope (SEM) and atomic force microscope (AFM). The optimized CdS layer process was applied on CZTSe thin-films. The thickness of buffer layer related with device performance of solar cells which controlled by deposition time. Local surface potential of CdS/CZTSe thin-films was investigated by Kelvin probe force microscopy (KPFM). From these results, we can deduce local electric properties with different thickness of buffer layer on CZTSe thin-films. Therefore, we investigated the effect of CdS buffer layer thickness on the CZTSe thin-films for decreasing device losses. From this study, we can suggest buffer layer thickness which contributes to efficiencies and device performance of CZTSe thin-film solar cells.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권4호
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• pp.221-225
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• 1999

This paper shows the parameters to affect the critical characteristic of YBaCuO superconducting bulk fabricated by MPMG (Melt Powdered Melt Growth)process. In order to investigate proper processing variables, the effect of the holding time at the melting temperature and that of the slow cooling time in $O_2\; ambient\; on\; the\; J_c$ were experimented. And then with the above obtained heat treatment conditions, the effects of addition of $Y_2BaCuO_5\; and\; Ag\; on\; the\; J_c$ were also investigated. A proper slow cooling time yields phase transformation from Tetragonal $(YBa_2Cu_3O_6)$ to Orthorhombic $(YBa_2Cu_3O_7)$ during an annealing time in $O_2$. Ag addition plays a role in increasing the $T_c\; and\; the J_c$, but the magnetization decreases. The $J_c$ and the magnetization increase with addition of Y211. $J_c$ of the sample added Ag 10wt% is superiorover 3000 G. Proper holding time, slow cooling time and amount of impurity addition are important parameters in fabricating the YBaCuO bulk by MPMG process with high $J_c$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.280-280
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• 2010

Semiconductor quantum dots are of great interest for both fundamental research and industrial applications due to their unique size dependant properties. The most promising application of colloidal semiconductor nanocrystals (quantum dots or QDs) is probably as emitters in biomedical labeling, LEDs, lasers etc. As compared to II-VI quantum dots, III-V have attracted greater interest owing to their less ionic lattice, larger exciton diameters and reduced toxicity. Among the III-V semiconductor quantum dots, Indium Phosphide (InP) is a popular material due to its bulk band gap of 1.35 (eV) which is responsible for the photoluminescence emission wavelength ranging from blue to near infrared with change in size of QDs. Nevertheless, in recent years, the exact type of collective properties that arise when semiconductor quantum dots (QDs) are assembled into two- or three-dimensional arrays has drawn much interest. The term "uantum dot solids" is used to indicate three-dimensional assemblies of semiconductor QDs. The optoelectronic properties of the quantum dot solids are known to depend on the electronic structure of the individual quantum dot building blocks and on their electronic interactions. This paper reports an efficient and rapid method to produce highly luminescent and monodisperse quantum dots solution and solid through fabrication of InP thin films. By varying the molar concentration of Indium to Ligand, QDs of different size were prepared. The absorption and emission behaviors were also studied. Similar measurements were also performed on InP quantum dot solid by fabricating InP thin films. The optical properties of the thin films are measured at different curing temperatures which show a blue shift with increase in temperature. The dielectric properties of the thin films were also investigated by Capacitance-voltage(C-V) measurements in a metal-insulator-semiconductor (MIS) device.

• 한국재료학회지
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• 제7권1호
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• pp.33-39
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• 1997

ECR PECVD법에 의해 $Pt/Ti/SiO_{2}/Si$ 다층 기판 위에 $480^{\circ}C$에서 순수한 페로브스카이트상의 PLT박막을 증착하였다. PLT 박막 증착전 ECR산소 플라즈마내에서의 $Pb(DPM)_{2}$ pre-flowing처리는 $Pb(DPM)_{2}$의 공급을 안정화시켜주며 박막증착초기에 Pb성분이 풍부한 분위기를 조성해 줌으로써 페로브스카이트 핵생성을 용이하게 하여 PLT박막 특성을 향상시켰다. Ti-source 유입량을 변화시킬 때 PLT박막의 증착특성, 조성, 결정상 그리고 전기적 특성을 관찰하였다. PLT박막은(100)으로 우선 배향되었으며 화학양론비가 잘 맞는 경우 높은 페로브스카이트 X-선 회절강도와 높은 유전율을 나타내었다.

• 한국분말재료학회지
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• 제23권2호
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• pp.143-148
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• 2016

A microfluidic reactor with computer-controlled programmable isocratic pumps and online detectors is employed as a combinatorial synthesis system to synthesize and analyze materials for fabricating CdSe quantum dots for various applications. Four reaction condition parameters, namely, the reaction temperature, reaction time, Cd/Se compositional ratio, and precursor concentration, are combined in synthesis condition sets, and the size of the synthesized CdSe quantum dots is determined for each condition. The average time corresponding to each reaction condition for obtaining the ultraviolet-visible absorbance and photoluminescence spectra is approximately 10 min. Using the data from the combinatorial synthesis system, the effects of the reaction conditions on the synthesized CdSe quantum dots are determined. Further, the data is used to determine the relationships between the reaction conditions and the CdSe particle size. This method should aid in determining and selecting the optimal conditions for synthesizing nanoparticles for diverse applications.

• 한국분말재료학회지
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• 제21권3호
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• pp.207-214
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• 2014

In this study, nano-scale copper powders were reduction treated in a hydrogen atmosphere at the relatively high temperature of $350^{\circ}C$ in order to eliminate surface oxide layers, which are the main obstacles for fabricating a nano/ultrafine grained bulk parts from the nano-scale powders. The changes in composition and microstructure before and after the hydrogen reduction treatment were evaluated by analyzing X-ray diffraction (XRD) line profile patterns using the convolutional multiple whole profile (CMWP) procedure. In order to confirm the result from the XRD line profile analysis, transmitted electron microscope observations were performed on the specimen of the hydrogen reduction treated powders fabricated using a focused ion beam process. A quasi-statically compacted specimen from the nano-scale powders was produced and Vickers micro-hardness was measured to verify the potential of the powders as the basis for a bulk nano/ultrafine grained material. Although the bonding between particles and the growth in size of the particles occurred, crystallites retained their nano-scale size evaluated using the XRD results. The hardness results demonstrate the usefulness of the powders for a nano/ultrafine grained material, once a good consolidation of powders is achieved.

• 공업화학
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• 제28권5호
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• pp.513-520
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• 2017

폐유리의 친환경적 재사용을 목적으로 발포유리를 제조하는데 있어서 에너지 소모가 상대적으로 적은 '인덕션 가열법'을 적용한 결과 제조온도를 $300^{\circ}C$ 이하로 낮출 수 있으며 고가의 각종 무기산화제를 첨가하지 않고, 인체에 무해한 폐유리가루, 물유리와 소량의 계면활성제와 기포안정제만을 사용하여 발포유리를 제조할 수 있었다. 본 실험의 실험범위에서 확인한 최적의 조건은 유리가루 110 g, 물유리 80 g, 계면활성제 3 g과 안정제 0.2 g을 사용하여 특수 제작한 철제용기($100mm{\times}100mm{\times}20mm$)를 이용하여 인덕션 가열장치에서 비등시켜 4 min간 가열 후 11 min 증발, 건조시킨 경우, 제조한 발포유리의 이때 밀도는 $0.85g/cm^3$, 열전도도 $0.052W/h{\cdot}K$, 압축 강도도 $50kg/cm^2$ 이상으로 분석되었다.